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29 条记录 (耗时 0.024 秒)

    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08304804B2

    公开(公告)日：2012-11-06

    申请号：US12601248

    申请日：2008-05-13

    申请人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

    发明人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

    IPC分类号： H01L33/00

    CPC分类号： H01L33/28

    摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x

    摘要翻译： 本发明的目的在于提高ZnO系光半导体装置的发光效率。 光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光 电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100163864A1

    公开(公告)日：2010-07-01

    申请号：US12601248

    申请日：2008-05-13

    申请人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

    发明人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

    IPC分类号： H01L33/00

    CPC分类号： H01L33/28

    摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x

    摘要翻译： 本发明的目的在于提高ZnO系光半导体装置的发光效率。 光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光 电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

    Solid state imaging device and fabrication method for the same
    5.
    发明授权
    Solid state imaging device and fabrication method for the same 有权
    固态成像装置及其制造方法相同

    公开(公告)号：US08299510B2

    公开(公告)日：2012-10-30

    申请号：US12525357

    申请日：2008-02-01

    申请人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

    发明人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

    摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

    摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元; 以及光电转换单元，其包括设置在电路单元上的下电极层，放置在下电极层上并用作光吸收层的黄铜矿结构的化合物半导体薄膜和放置在化合物上的光透明电极层 半导体薄膜，其中下电极层，化合物半导体薄膜和光透明电极层在电路单元上依次层叠。

    Photoelectric conversion device, fabrication method for the same, and solid state imaging device
    7.
    发明授权
    Photoelectric conversion device, fabrication method for the same, and solid state imaging device 失效
    光电转换装置及其制造方法以及固态成像装置

    公开(公告)号：US08592933B2

    公开(公告)日：2013-11-26

    申请号：US12937013

    申请日：2009-03-30

    申请人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

    发明人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14645 ,  H01L31/0322

    摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film , wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.

    摘要翻译： 光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。 光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。 光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压 并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。 也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。

    SOLID STATE IMAGING DEVICE AND FABRICATION METHOD FOR THE SAME
    8.
    发明申请
    SOLID STATE IMAGING DEVICE AND FABRICATION METHOD FOR THE SAME 有权
    固态成像装置及其制造方法

    公开(公告)号：US20100102368A1

    公开(公告)日：2010-04-29

    申请号：US12525357

    申请日：2008-02-01

    申请人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

    发明人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

    IPC分类号： H01L31/032 ,  H01L31/18

    CPC分类号： H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

    摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).

    摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 一种固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元（30）; 以及包括放置在电路单元（30）上的下电极层（25）的光电转换单元（28），放置在下电极层（25）上的黄铜矿结构的化合物半导体薄膜（24） 光吸收层和放置在化合物半导体薄膜（24）上的光透明电极层（26），其中下电极层（25），化合物半导体薄膜（24）和光透明电极层 26）在电路单元（30）上依次层叠。

    PHOTOELECTRIC CONVERSION DEVICE, FABRICATION METHOD FOR THE SAME, AND SOLID STATE IMAGING DEVICE
    10.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, FABRICATION METHOD FOR THE SAME, AND SOLID STATE IMAGING DEVICE 失效
    光电转换装置，其制造方法和固态成像装置

    公开(公告)号：US20110024859A1

    公开(公告)日：2011-02-03

    申请号：US12937013

    申请日：2009-03-30

    申请人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

    发明人： Kenichi Miyazaki ,  Osamu Matsushima ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka

    IPC分类号： H01L31/0232 ,  H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/14645 ,  H01L31/0322

    摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.

    摘要翻译： 光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。 光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。 光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压 并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。 也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。