公开(公告)号：US20120007095A1

公开(公告)日：2012-01-12

申请号：US13238754

申请日：2011-09-21

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC分类号： H01L29/38

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US20100264421A1

公开(公告)日：2010-10-21

申请号：US12824747

申请日：2010-06-28

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC分类号： H01L33/00

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US20130001583A1

公开(公告)日：2013-01-03

申请号：US13609906

申请日：2012-09-11

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC分类号： H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

公开(公告)号：US20130001568A1

公开(公告)日：2013-01-03

申请号：US13609915

申请日：2012-09-11

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC分类号： H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US20090104750A1

公开(公告)日：2009-04-23

申请号：US12253301

申请日：2008-10-17

申请人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Jun KOYAMA

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  C03C17/3435 ,  C03C17/3482 ,  C03C2218/32 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  Y10S438/938 ,  Y10S438/961

摘要： If the size of a single crystal silicon layer attached is not appropriate, even when a large glass substrate is used, the number of panels to be obtained cannot be maximized. Therefore, in the present invention, a substantially quadrangular single crystal semiconductor substrate is formed from a substantially circular single crystal semiconductor wafer, and a damaged layer is formed by irradiation with an ion beam into the single crystal semiconductor substrate. A plurality of the single crystal semiconductor substrates are arranged so as to be separated from each other over one surface of a supporting substrate. By thermal treatment, a crack is generated in the damaged layer and the single crystal semiconductor substrate is separated while a single semiconductor layer is left over the supporting substrate. After that, one or a plurality of display panels is manufactured from the single crystal semiconductor layer bonded to the supporting substrate.

摘要翻译： 如果附着的单晶硅层的尺寸不合适，即使使用大的玻璃基板，也不能使要获得的面板的数量最大化。 因此，在本发明中，从大致圆形的单晶半导体晶片形成大致四边形的单晶半导体基板，通过将离子束照射到单晶半导体基板中形成损伤层。 多个单晶半导体基板被布置成在支撑基板的一个表面上彼此分离。 通过热处理，在损伤层中产生裂纹，并且单个半导体衬底被分离，而单个半导体层留在支撑衬底上。 之后，从结合到支撑基板的单晶半导体层制造一个或多个显示面板。

公开(公告)号：US20130037884A1

公开(公告)日：2013-02-14

申请号：US13549914

申请日：2012-07-16

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Jun KOYAMA ,  Takeshi FUKUNAGA

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Jun KOYAMA ,  Takeshi FUKUNAGA

IPC分类号： H01L29/786

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/42324 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/7881

摘要： An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.

公开(公告)号：US20120306728A1

公开(公告)日：2012-12-06

申请号：US13484489

申请日：2012-05-31

申请人： Jun KOYAMA ,  Shunpei YAMAZAKI

发明人： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC分类号： G09G3/30

CPC分类号： G09G3/3216 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2310/061 ,  G09G2320/0223 ,  G09G2320/0233 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043

摘要： A display device suppresses the influence of variations of a current value supplied to a light emitting element caused by a temperature change. In particular, luminance variations caused by a temperature gradient in a pixel portion due to a heat generated from a source signal line driver circuit are suppressed. In a display device including a gate signal line provided in a row direction, a source signal line provided in a column direction, and a light emitting element in a pixel portion arranged in matrix corresponding to the gate signal line and the source signal line, a column of monitor elements is provided beside the pixel portion, a constant current is supplied to each row of the monitor elements, and a voltage generated at the monitor element for each row of pixels is applied to light emitting elements of the corresponding row.

摘要翻译： 显示装置抑制由温度变化引起的提供给发光元件的电流值的变化的影响。 特别地，抑制了由源极信号线驱动电路产生的热量引起的象素部分温度梯度引起的亮度变化。 在包括沿行方向设置的栅极信号线，沿列方向设置的源极信号线和与栅极信号线和源极信号线对应地排列成矩阵的像素部中的发光元件的显示装置中， 监视器元件列设置在像素部分的旁边，向监视器元件的每一行提供恒定电流，并且将针对每行像素的监视元件产生的电压施加到相应行的发光元件。

公开(公告)号：US20120287359A1

公开(公告)日：2012-11-15

申请号：US13461809

申请日：2012-05-02

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC分类号： G02F1/1343

CPC分类号： G02F1/1347 ,  G02B27/2214 ,  G02B27/2264 ,  H04N13/31 ,  H04N13/315

摘要： A display device includes a display panel and a shutter panel provided on a viewable side of the display panel. The shutter panel includes a plurality of first transparent electrodes provided over a first substrate, a plurality of second transparent electrodes provided over a second substrate, and a liquid crystal provided between the first substrate and the second substrate. The first transparent electrodes and the second transparent electrodes are arranged in striped patterns in a first direction and are both spaced in a second direction intersecting the first direction. Potentials of the first transparent electrodes and potentials of the second transparent electrodes are controlled to adjust an alignment of the liquid crystal, so that the shutter panel is provided with light-shielding regions arranged in a striped pattern in the first direction and spaced in the second direction and light-transmitting regions each of which is provided between the light-shielding regions.

摘要翻译： 显示装置包括显示面板和设置在显示面板的可视侧的快门面板。 快门面板包括设置在第一基板上的多个第一透明电极，设置在第二基板上的多个第二透明电极以及设置在第一基板和第二基板之间的液晶。 第一透明电极和第二透明电极在第一方向上以条纹图案布置，并且在与第一方向相交的第二方向上都间隔开。 控制第一透明电极的电位和第二透明电极的电位以调节液晶的对准，使得快门面板设置有在第一方向上以条纹图案排列的光屏蔽区域，并且在第二透明电极 方向和透光区域设置在遮光区域之间。

公开(公告)号：US20120274542A1

公开(公告)日：2012-11-01

申请号：US13450758

申请日：2012-04-19

申请人： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA ,  Masaaki HIROKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA ,  Masaaki HIROKI ,  Jun KOYAMA

IPC分类号： G09G3/00

CPC分类号： H04N13/31 ,  G09G3/003 ,  H04N13/324

摘要： An object is to provide a display device on which 3D images can be perceived from a large area. A parallax barrier panel includes a first substrate provided with a plurality of light-blocking layers and a plurality of light-transmitting layers, and a second substrate. The light-blocking layers and the light-transmitting layers are alternately provided in contact with one surface of the first substrate and are interposed between the first substrate and the second substrate. The refraction index of each of the light-transmitting layers is different from the refraction index of the first substrate or the refraction index of the second substrate. The parallax barrier panel is stacked with a display panel including a plurality of pairs of a pixel for the right eye and a pixel for the left eye.

摘要翻译： 目的在于提供一种能够从大面积感知3D图像的显示装置。 视差屏障面板包括设置有多个遮光层和多个透光层的第一基板和第二基板。 遮光层和透光层交替地设置成与第一基板的一个表面接触并且插入在第一基板和第二基板之间。 每个透光层的折射率不同于第一基板的折射率或第二基板的折射率。 视差屏障面板堆叠有显示面板，显示面板包括用于右眼的多对像素和用于左眼的像素。

公开(公告)号：US20120051118A1

公开(公告)日：2012-03-01

申请号：US13215489

申请日：2011-08-23

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC分类号： G11C11/24 ,  H01L29/12

CPC分类号： G11C14/0018 ,  G11C8/08 ,  G11C11/401 ,  G11C11/403 ,  G11C16/02 ,  G11C16/0408 ,  G11C16/0433 ,  G11C16/34 ,  H01L27/1156 ,  H01L27/1225

摘要： A memory device in which data can be retained for a long time is provided. The memory device includes a memory element and a transistor which functions as a switching element for controlling supply, storage, and release of electrical charge in the memory element. The transistor includes a second gate electrode for controlling the threshold voltage in addition to a normal gate electrode. Further, the off-state current of the transistor is extremely low because an active layer thereof includes an oxide semiconductor. In the memory device, data is stored not by injection of electrical charge to a floating gate surrounded by an insulating film at high voltage but by control of the amount of electrical charge of the memory element through the transistor whose off-state current is extremely low.

摘要翻译： 提供了能够长时间保持数据的存储装置。 存储器件包括存储元件和用作控制存储元件中电荷的供应，存储和释放的开关元件的晶体管。 晶体管包括用于除正常栅电极之外控制阈值电压的第二栅电极。 此外，晶体管的截止电流极低，因为其有源层包括氧化物半导体。 在存储装置中，数据不是通过将电荷注入到由绝缘膜高压包围的浮动栅极而是通过截止状态电流非常低的晶体管控制存储元件的电荷量来存储的 。