公开(公告)号：US08350621B2

公开(公告)日：2013-01-08

申请号：US13568186

申请日：2012-08-07

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： H01L25/00

CPC分类号： H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

摘要翻译： 目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。 使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用 其中不产生电场。 因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

公开(公告)号：US20110090006A1

公开(公告)日：2011-04-21

申请号：US12907559

申请日：2010-10-19

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose

IPC分类号： H01L27/085

CPC分类号： H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

摘要翻译： 目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。 使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用 其中不产生电场。 因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

公开(公告)号：US08242837B2

公开(公告)日：2012-08-14

申请号：US12907559

申请日：2010-10-19

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： H01L25/00

CPC分类号： H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

摘要翻译： 目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。 使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用 其中不产生电场。 因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

公开(公告)号：US08035077B2

公开(公告)日：2011-10-11

申请号：US12836142

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H01L31/18

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US08486804B2

公开(公告)日：2013-07-16

申请号：US11928912

申请日：2007-10-30

申请人： Shunpei Yamazaki ,  Masahiro Katayama ,  Yoshiaki Oikawa ,  Atsushi Hirose ,  Masayuki Sakakura

发明人： Shunpei Yamazaki ,  Masahiro Katayama ,  Yoshiaki Oikawa ,  Atsushi Hirose ,  Masayuki Sakakura

IPC分类号： H01L21/302

CPC分类号： H01L27/1443 ,  H01L27/1214 ,  H01L27/1266 ,  H01L31/02005 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/1055 ,  H01L31/1892 ,  H01M10/46 ,  H03F3/08 ,  Y02E10/50

摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.

摘要翻译： 一种半导体器件，包括在第一绝缘膜上包括光电二极管的第一元件和放大光电二极管的输出电流的放大器电路; 并且制造在第二绝缘膜上的在滤色器上方包括滤色器和外涂层的第二元件。 第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。 此外，放大器电路是包括薄膜晶体管的电流镜电路。 此外，可以使用彩色胶片代替滤色器。

公开(公告)号：US07759629B2

公开(公告)日：2010-07-20

申请号：US12043640

申请日：2008-03-06

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H01L31/18

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US20080230682A1

公开(公告)日：2008-09-25

申请号：US12043640

申请日：2008-03-06

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H03F3/08 ,  H01L31/18

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US20100282947A1

公开(公告)日：2010-11-11

申请号：US12836142

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H03F3/08 ,  H01L31/18 ,  H01L31/101

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US08053717B2

公开(公告)日：2011-11-08

申请号：US12465335

申请日：2009-05-13

申请人： Jun Koyama ,  Atsushi Hirose

发明人： Jun Koyama ,  Atsushi Hirose

IPC分类号： H01J40/14

CPC分类号： H03F3/08

摘要： The photoelectric conversion device includes a photoelectric conversion circuit for outputting photocurrent generated in a photoelectric conversion element as output voltage subjected to logarithmic compression by a first diode element, a reference voltage generation circuit for outputting reference voltage subjected to logarithmic compression by a second diode element in accordance with the amount of current flowing to a resistor, an arithmetic circuit for outputting an output signal obtained by amplifying a difference between the output voltage output from the photoelectric conversion circuit and the reference voltage output from the reference voltage generation circuit, and an output circuit for outputting current corresponding to the logarithmically-compressed output voltage output from the photoelectric conversion circuit by the output signal.

摘要翻译： 光电转换装置包括用于输出在光电转换元件中产生的光电流作为由第一二极管元件进行对数压缩的输出电压的光电转换电路，用于输出由第二二极管元件进行对数压缩的参考电压的参考电压产生电路 根据流向电阻器的电流量，输出通过放大从光电转换电路输出的输出电压与从基准电压产生电路输出的参考电压之间的差而获得的输出信号的运算电路，以及输出电路 用于输出与通过输出信号从光电转换电路输出的对数压缩输出电压相对应的电流。

公开(公告)号：US08106346B2

公开(公告)日：2012-01-31

申请号：US12550471

申请日：2009-08-31

申请人： Atsushi Hirose ,  Jun Koyama

发明人： Atsushi Hirose ,  Jun Koyama

IPC分类号： H01J40/14

CPC分类号： H03K17/785

摘要： A photodetector includes a photoelectric conversion circuit that generates a first voltage by converting a first current generated in accordance with the illuminance of incident light into log-compressed voltage; a temperature compensation circuit that generates a second voltage by performing temperature compensation for the first voltage and generate a second current by converting the second voltage into current; and a digital signal generation circuit that generates a clock signal having an oscillation frequency depending on the second current, counts pulses of the clock signal for a certain period, and generates a digital signal using the count value for the certain period as data.

摘要翻译： 光电检测器包括光电转换电路，其通过将根据入射光的照度生成的第一电流转换为对数压缩电压来产生第一电压; 温度补偿电路，通过对所述第一电压进行温度补偿并通过将所述第二电压转换为电流来产生第二电流来产生第二电压; 以及产生具有与第二电流有关的振荡频率的时钟信号的数字信号产生电路，对某一时段的时钟信号的脉冲进行计数，并使用该特定周期的计数值作为数据生成数字信号。