摘要:
A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.
摘要:
Ultraviolet light is emitted mainly with 185 nm in wave length so that a thick silicon layer is fabricated by decomposition of silane gas at a high deposition speed. As a light source, a bulb is filled with an amount of mercury gas without dosing argon gas which enhances preferentially light with 254 nm in wave length.
摘要:
An improved liquid crystal filling device is shown. Prior to joining a substrate with another substrate between which the liquid crystal is to be charged, the liquid crystal is dropped on the substrate and then the other substrate is superimposed on the substrate under pressure. Sandwiched between the substrates, the liquid crystal spreads at high temperature.
摘要:
A photo CVD apparatus includes a reaction chamber, a light source for radiating light to the inside of the chamber through a light window, and a pair of electrodes disposed in the chamber for glow discharge, one of the electrodes being located on the light window. After deposition by photo CVD, a light window for transmission of UV light is cleaned by plasma etching by virtue of glow discharge taking place between the electrodes. The light source and the electrodes for plasma etching share one power supply for supplying high frequency electric power.
摘要:
A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.
摘要:
A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.
摘要:
An improved liquid crystal device is shown. The device comprises a pair of substrates, a liquid crystal layer disposed inbetween and a pair of electrodes formed on the opposed insides of the substrate for applying an electric field on the liquid crystal layer. Further a dielectric film is formed on a inside of the substrate of the device. In response to an electric field applied to the liquid crystal layer, an electric charge is accumulated on the dielectric film to enable the device to exhibit apparent coersive electric field.
摘要:
An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
摘要:
An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.
摘要:
A CVD method for forming a conformal coating over a depression or a cave in a top surface is disclosed, which comprises the steps of forming at least one depression or a cave in said top surface where at least a portion of the depression or the cave has an inner surface; providing a reactive precursor containing at least an alkyl metal compound; and CVD forming from a gas of said reactive precursor at least one metal-containing layer over said top surface and said depression or cave such that the ratio ds/dt of the thickness (ds) of the layer on the inner surafce of the depression or cave and the thickness (dt) of the layer on the top surface is substantially one.