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1.发明授权公开(公告)号：US09012949B2
公开(公告)日：2015-04-21
申请号：US13543715
申请日：2012-07-06
申请人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
CPC分类号： H01L51/5246 , G02F1/133514 , G02F1/133603 , G02F1/1339 , G02F1/1368 , H01L27/322 , H01L27/3246 , H01L51/0096 , H01L51/524 , H01L51/5253 , H01L2251/5315
摘要： A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.
摘要翻译： 提供了高度可靠的发光模块或发光装置。 提供一种用于制造高度可靠的发光模块的方法。 发光模块在第一基板和第二基板之间包括设置在第一基板上的第一电极，设置在第一电极上的第二电极，其间插入有发光有机化合物的层，牺牲层 使用设置在第二电极上的液体材料形成。
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2.发明申请公开(公告)号：US20130009194A1
公开(公告)日：2013-01-10
申请号：US13543715
申请日：2012-07-06
申请人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
CPC分类号： H01L51/5246 , G02F1/133514 , G02F1/133603 , G02F1/1339 , G02F1/1368 , H01L27/322 , H01L27/3246 , H01L51/0096 , H01L51/524 , H01L51/5253 , H01L2251/5315
摘要： A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.
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公开(公告)号：US08399329B2
公开(公告)日：2013-03-19
申请号：US12722684
申请日：2010-03-12
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
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公开(公告)号：US07709337B2
公开(公告)日：2010-05-04
申请号：US12076763
申请日：2008-03-21
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
摘要翻译： 本发明的目的是提供一种制造具有SOI层的SOI衬底的方法，该SOI衬底即使在诸如玻璃衬底或塑料衬底之类的柔性衬底使用时也可以在实际应用中以高产率使用。 此外，本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。 当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时，一个或两个键合表面被激活，然后柔性衬底具有绝缘表面 并且单晶半导体衬底彼此附接。
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公开(公告)号：US20080261379A1
公开(公告)日：2008-10-23
申请号：US12076763
申请日：2008-03-21
IPC分类号： H01L21/322
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
摘要翻译： 本发明的目的是提供一种制造具有SOI层的SOI衬底的方法，该SOI衬底即使在使用诸如玻璃衬底或塑料衬底的柔性衬底时，也可以在实际应用中以高产率使用。 此外，本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。 当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时，一个或两个键合表面被激活，然后柔性衬底具有绝缘表面 并且单晶半导体衬底彼此附接。
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公开(公告)号：US08823023B2
公开(公告)日：2014-09-02
申请号：US13542693
申请日：2012-07-06
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133603 , H01L21/6835 , H01L27/1214 , H01L27/153 , H01L33/0079 , H01L33/62 , H01L51/003 , H01L2221/68318 , H01L2221/68386
摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。
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公开(公告)号：US08222116B2
公开(公告)日：2012-07-17
申请号：US11705828
申请日：2007-02-14
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133603 , H01L21/6835 , H01L27/1214 , H01L27/153 , H01L33/0079 , H01L33/62 , H01L51/003 , H01L2221/68318 , H01L2221/68386
摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。
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公开(公告)号：US20070295973A1
公开(公告)日：2007-12-27
申请号：US11705828
申请日：2007-02-14
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133603 , H01L21/6835 , H01L27/1214 , H01L27/153 , H01L33/0079 , H01L33/62 , H01L51/003 , H01L2221/68318 , H01L2221/68386
摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。
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公开(公告)号：US08637866B2
公开(公告)日：2014-01-28
申请号：US12490447
申请日：2009-06-24
申请人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
发明人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
IPC分类号： H01L29/72
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
摘要翻译： 至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。
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公开(公告)号：US07927991B2
公开(公告)日：2011-04-19
申请号：US11839349
申请日：2007-08-15
申请人： Hidekazu Miyairi , Yasuhiro Jinbo , Eiji Higa , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Yasuhiro Jinbo , Eiji Higa , Shunpei Yamazaki
IPC分类号： H01L21/20 , H01L21/3205
CPC分类号： H01L27/1288 , B23K26/0884 , B23K2101/006 , G03F1/20 , H01L21/3086 , H01L21/32139 , H01L27/1214 , H01L29/42384 , H01L29/66765
摘要： In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer.
摘要翻译： 在半导体器件的制造工艺中，提供了减少使用光致抗蚀剂并简化工艺的光刻工艺的数量的制造技术，这提高了生产率。 在不使用使用光致抗蚀剂的光刻技术的情况下，制造用于形成诸如导电层或半导体层的被处理层的图案的蚀刻掩模。 蚀刻掩模由包括吸收激光束的材料的光吸收层形成。 通过光掩模用激光束照射光吸收层并利用由光吸收层吸收的激光束的能量进行激光烧蚀来形成掩模。
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