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    Ferroelectric crystal display panel and manufacturing method thereof
    6.
    发明授权
    Ferroelectric crystal display panel and manufacturing method thereof 失效
    铁电晶体显示面板及其制造方法

    公开(公告)号：US4730903A

    公开(公告)日：1988-03-15

    申请号：US821840

    申请日：1986-01-23

    申请人： Shunpei Yamazaki ,  Takashi Inushima ,  Akira Mase ,  Toshimitsu Konuma ,  Mitsunori Sakama

    发明人： Shunpei Yamazaki ,  Takashi Inushima ,  Akira Mase ,  Toshimitsu Konuma ,  Mitsunori Sakama

    IPC分类号： G02F1/1365 ,  G02F1/13

    CPC分类号： G02F1/1365 ,  Y10S359/90

    摘要： A ferroelectric liquid crystal display having a matrix of ferroelectric liquid crystal elements and nonlinear elements having a diode characteristic in which the liquid crystal elements are connected in series with the nonlinear elements. The first substrate member comprises (a) a transparent first substrate having an insulating surface, (b) a plurality of m.times.n (m>1, n>1) of rectangular transparent conductive layers C.sub.11 to C.sub.1n, C.sub.21 to C.sub.2n, . . . C.sub.m1 to C.sub.mn arranged on the substrate in a matrix form on the first substrate, (c) a layer member A.sub.ij formed on the conductive layer C.sub.ij (where i=1, 2 . . . m and j=1, 2 . . . n) and (d) a stripe-like conductive layer F.sub.i extending in the row direction and making contact with layer member A.sub.i1 to A.sub.in on the side opposite from the conductive layer C.sub.i1 to C.sub.in, wherein the opposing side surfaces a and a' of the layer member A.sub.ij defining is length are substantially aligned with the opposing side surfaces b and b' of the conductive layer C.sub.ij defining its width, respectively, and wherein the opposing side surface b and b' of the layer member A.sub.ij defining its width are substantially aligned with the opposing side surfaces b and b' of the conductive layer F.sub.i defining its width, respectively. The layer member A.sub.ij may be a laminate layer of a first nontransparent conductive layer, non-single-crystal semiconductor layer member or thin insulating layer which permits passage therethrough of tunnel current and a second nontransparent conductive layer.

    摘要翻译： 具有铁电液晶元件的矩阵的铁电液晶显示器和具有二极管特性的非线性元件，其中液晶元件与非线性元件串联连接。 第一衬底构件包括（a）具有绝缘表面的透明第一衬底，（b）矩形透明导电层C11至C1n，C21至C2n的多个m1n（m1，n≥1）。 。 。 Cm1至Cmn以矩阵形式布置在第一衬底上的衬底上，（c）形成在导电层Cij上的层构件Aij（其中i = 1,2 ...和j = 1,2 ...） ）和（d）沿行方向延伸的条状导电层Fi，并且在与导电层Ci1至Cin相对的一侧与层构件Ai1至Ain接触，其中层的相对侧表面a和a' 构件Aij的长度分别基本上与导电层Cij的相对的侧表面b和b'对准，以限定其宽度，并且其中限定其宽度的层构件Aij的相对的侧表面b和b'基本上与 导电层Fi的相对的侧表面b和b'分别限定其宽度。 层构件Aij可以是允许隧道电流通过的第一非透明导电层，非单晶半导体层构件或薄绝缘层的层压层和第二非透明导电层。

    Method of manufacturing gate insulated field effect transistors
    7.
    发明授权
    Method of manufacturing gate insulated field effect transistors 失效
    栅极绝缘场效应晶体管的制造方法

    公开(公告)号：US07507615B2

    公开(公告)日：2009-03-24

    申请号：US10401891

    申请日：2003-03-31

    申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

    发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

    IPC分类号： H01L21/84

    CPC分类号： H01L29/66757 ,  C23C14/568 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02661 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908

    摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

    摘要翻译： 描述制造薄膜场效应晶体管的方法。 通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。 栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。 用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。 另一方面，通过溅射在包含氧的气​​氛中沉积栅极绝缘氧化物膜。

    Method of manufacturing gate insulated field effect transistors
    9.
    发明授权
    Method of manufacturing gate insulated field effect transistors 失效
    栅极绝缘场效应晶体管的制造方法

    公开(公告)号：US06261877B1

    公开(公告)日：2001-07-17

    申请号：US08677331

    申请日：1996-07-02

    申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

    发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

    IPC分类号： H01L2184

    CPC分类号： H01L29/66757 ,  C23C14/568 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02661 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908

    摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

    摘要翻译： 描述制造薄膜场效应晶体管的方法。 通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。 栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。 用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。 另一方面，通过溅射在包含氧的气​​氛中沉积栅极绝缘氧化物膜。