Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same
    3.
    发明申请
    Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same 审中-公开
    硫族化物前体化合物和使用其制备硫属化物薄膜的方法

    公开(公告)号:US20070166645A1

    公开(公告)日:2007-07-19

    申请号:US11412028

    申请日:2006-04-26

    IPC分类号: G11B7/24

    CPC分类号: C23C26/02 C07F3/003 C23C2/04

    摘要: Disclosed herein are a soluble chalcogenide precursor compound and a method for preparing a chalcogenide thin film using the precursor compound by a solution deposition process, e.g., spin coating or dip coating. In the method, the use of the chalcogenide precursor as an inorganic semiconductor material soluble in organic solvents enables the preparation of a semiconductor thin film having excellent electrical and physical properties (e.g., crystallinity). In addition, a large-area thin film can be prepared by a solution deposition process, thus contributing to the simplification of procedures and reduction of preparation costs. Therefore, the method can be effectively applied in a wide variety of fields, such as thin film transistors, electroluminescent devices, photovoltaic cells and memory devices.

    摘要翻译: 本文公开了一种可溶性硫族化物前体化合物和使用前体化合物通过溶液沉积方法如旋涂或浸涂制备硫族化物薄膜的方法。 在该方法中,作为可溶于有机溶剂的无机半导体材料的硫族化物前体的使用使得能够制备具有优异的电学和物理性质(例如结晶度)的半导体薄膜。 此外,可以通过溶液沉积工艺制备大面积薄膜,从而有助于简化程序和降低制备成本。 因此,该方法可以有效地应用于薄膜晶体管,电致发光器件,光伏电池和存储器件等各种领域。

    Porous chalcogenide thin film, method for preparing the same and electronic device using the same
    4.
    发明申请
    Porous chalcogenide thin film, method for preparing the same and electronic device using the same 审中-公开
    多孔硫族化物薄膜,其制备方法和使用其的电子器件

    公开(公告)号:US20070090346A1

    公开(公告)日:2007-04-26

    申请号:US11439036

    申请日:2006-05-23

    IPC分类号: C01G11/02 H01L29/08 C07F3/00

    摘要: A porous chalcogenide thin film having a microporous structure, a method for preparing the chalcogenide thin film and an electronic device employing the chalcogenide thin film, are provided. The porous chalcogenide thin film has superior crystallinity and can be applied as a semiconductor layer having superior electrical properties to the fabrication of devices by inserting functional metal or semiconductor nanoparticles into nanopores of the thin film.

    摘要翻译: 提供具有微孔结构的多孔硫族化物薄膜,制备硫族化物薄膜的方法和采用硫族化物薄膜的电子器件。 多孔硫族化物薄膜具有优异的结晶度,并且通过将功能性金属或半导体纳米颗粒插入薄膜的纳米孔中,可以将其应用于具有优异电性能的半导体层与器件的制造。

    Method of handoff control in an enterprise code division multiple access wireless system

    公开(公告)号:US20060034229A1

    公开(公告)日:2006-02-16

    申请号:US11198651

    申请日:2005-08-05

    IPC分类号: H04B7/216

    摘要: A wireless office communication system including a wireless internet base station (WIBS) encompassing a base station controller (BSC), a mobile switch controller (MSC), and an ethernet interface module for coupling the wireless internet base station (WIBS) to an existing internet protocol (IP) based network. A wireless office communication system can also be based on the conventional architecture comprising the base station transceiver subsystem BTS, BSC, and MSC. The WIBS or BTS is attached to a number of antennas via different and identifiable delay elements for the purpose of determining the serving antennas of mobile communication units. A location determination logic enables the system to handle handoffs between a WIBS or BTS and the external public communication system in an optimum manner. Handling handoff requests in this manner prevents unnecessary ping-ponging of hand off and can also increase the percentage of successful handoff by frequency monitoring of the quality of the mobile communication units located in the handoff transition area, particularly to the public communication system.