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公开(公告)号：US07883393B2
公开(公告)日：2011-02-08
申请号：US12093113
申请日：2005-11-08
IPC分类号： B24B49/00
CPC分类号： B23H5/08 , B24B53/001 , B24B53/017 , C25F1/00
摘要： A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad.
摘要翻译： 一种用于从抛光垫去除颗粒以提高抛光垫作为化学机械抛光工艺的一部分去除材料的效率的系统，该系统包括抛光垫; 流体分配器，布置成在抛光垫上分配流体; 和去除装置，其中所述去除装置包括用于增加分配在抛光垫上的流体的温度的加热器和/或用于将抛光垫耦合到电压源的电压装置，用于从抛光垫表面排斥带电粒子，同时流体 分配器在抛光垫上分配流体。
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公开(公告)号：US20080287041A1
公开(公告)日：2008-11-20
申请号：US12093113
申请日：2005-11-08
IPC分类号： B24B7/00
CPC分类号： B23H5/08 , B24B53/001 , B24B53/017 , C25F1/00
摘要： A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad.
摘要翻译： 一种用于从抛光垫去除颗粒以提高抛光垫作为化学机械抛光工艺的一部分去除材料的效率的系统，该系统包括抛光垫; 流体分配器，布置成在抛光垫上分配流体; 和去除装置，其中所述去除装置包括用于增加分配在抛光垫上的流体的温度的加热器和/或用于将抛光垫耦合到电压源的电压装置，用于从抛光垫表面排斥带电粒子，同时流体 分配器在抛光垫上分配流体。
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公开(公告)号：US08752228B2
公开(公告)日：2014-06-17
申请号：US11912126
申请日：2005-04-20
IPC分类号： H01L21/00
CPC分类号： H01L21/67046
摘要： Silicon wafers and the like are cleaned using new scrubber-type apparatus in which measures are taken to compensate for differential cleaning of the central region of the wafer by: using rotary brushes having one or more non-contact portions arranged in the section thereof that faces the central region of the substrate, or toggling the relative position of the wafer and the rotary brushes, or directing cleaning fluid(s) preferentially towards the central region of the wafer. Another aspect of the invention provides scrubber-type cleaning apparatus in which the rotary brushes are replaced by rollers (110). A web of cleaning material (116) is interposed between each roller and the substrate. Various different webs of cleaning material may be used, e.g. a length of tissue, a continuous loop of cleaning material whose surface is reconditioned on each cleaning pass, adhesive material provided on a carrier tape, etc.
摘要翻译： 使用新的洗涤器型装置清洁硅晶片等，其中采取措施来补偿晶片的中心区域的差别清洁：使用具有一个或多个非接触部分的旋转电刷， 或者切换晶片和旋转刷的相对位置，或者将清洁流体优先地引向晶片的中心区域。 本发明的另一方面提供了一种洗涤器型清洁装置，其中旋转刷由辊（110）代替。 清洁材料网（116）插入在每个辊和基底之间。 可以使用各种不同的清洁材料网，例如。 组织长度，每个清洁通道上表面被修复的清洁材料的连续回路，设置在载带上的粘合材料等。
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公开(公告)号：US20080271274A1
公开(公告)日：2008-11-06
申请号：US11912126
申请日：2005-04-20
IPC分类号： H01L21/00
CPC分类号： H01L21/67046
摘要： Silicon wafers and the like are cleaned using new scrubber-type apparatus in which measures are taken to compensate for differential cleaning of the central region of the wafer by: using rotary brushes having one or more non-contact portions arranged in the section thereof that faces the central region of the substrate, or toggling the relative position of the wafer and the rotary brushes, or directing cleaning fluid(s) preferentially towards the central region of the wafer. Another aspect of the invention provides scrubber-type cleaning apparatus in which the rotary brushes are replaced by rollers (110). A web of cleaning material (116) is interposed between each roller and the substrate. Various different webs of cleaning material may be used, e.g. a length of tissue, a continuous loop of cleaning material whose surface is reconditioned on each cleaning pass, adhesive material provided on a carrier tape, etc.
摘要翻译： 使用新的洗涤器型装置清洁硅晶片等，其中采取措施来补偿晶片的中心区域的差别清洁：使用具有一个或多个非接触部分的旋转电刷， 或者切换晶片和旋转刷的相对位置，或者将清洁流体优先地引向晶片的中心区域。 本发明的另一方面提供了一种洗涤器型清洁装置，其中旋转刷由辊（110）代替。 清洁材料网（116）插入在每个辊和基底之间。 可以使用各种不同的清洁材料网，例如。 组织长度，每个清洁通道上表面被修复的清洁材料的连续回路，设置在载带上的粘合材料等。
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5.发明授权Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device 有权包括耦合电介质层和金属层的半导体器件，其制造方法以及用于在半导体器件中耦合电介质层和金属层的材料公开(公告)号：US07691756B2
公开(公告)日：2010-04-06
申请号：US12065179
申请日：2006-09-01
申请人： Janos Farkas , Srdjan Kordic , Cindy Goldberg
发明人： Janos Farkas , Srdjan Kordic , Cindy Goldberg
CPC分类号： H01L21/3105 , C04B35/5603 , C04B35/565 , C04B2235/483 , C08G77/60 , C08L83/16 , C09D183/16 , H01L21/02063 , H01L21/02126 , H01L21/02164 , H01L21/02203 , H01L21/288 , H01L21/76801 , H01L21/7682 , H01L21/76838
摘要： A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material.
摘要翻译： 一种钝化耦合材料，一方面使半导体器件中的电介质层钝化，另一方面，用于在随后的工艺步骤中允许或至少促进液相金属沉积。 在具体实例中，电介质层可以是具有理想的降低介电常数k的多孔材料，并且钝化耦合材料提供空间屏蔽基团，其基本上阻止环境水分吸附和吸收到多孔介电层中。 与金属沉积相比，钝化耦合材料还提供金属成核侧，用于促进金属沉积在液相中，而不存在钝化偶联材料。 使用液相金属沉积工艺有助于随后的半导体器件的制造。 在一个实例中，钝化偶联材料在其化学组成中具有多个Si原子，这有利地增加了材料的热稳定性。
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公开(公告)号：US08263430B2
公开(公告)日：2012-09-11
申请号：US12065190
申请日：2005-09-01
申请人： Janos Farkas , Lynne M Michaelson , Srdjan Kordic
发明人： Janos Farkas , Lynne M Michaelson , Srdjan Kordic
IPC分类号： H01L51/56
CPC分类号： H01L21/02074 , H01L21/288 , H01L21/3105 , H01L21/76801 , H01L21/76826 , H01L21/76849
摘要： A process for the formation of a capping layer on a conducting interconnect for a semiconductor device is provided, the process comprising the steps of: (a) providing one or more conductors in a dielectric layer, and (b) depositing a capping layer on an upper surface of at least some of the one or more conductors, characterized in that the process further includes: (c) the step of, prior to depositing the capping layer, reacting the dielectric layer with an organic compound in a liquid phase, the said organic compound having the following general formula: (I) where X is a functional group, R is an organic group or a organosiloxane group, Y1 is either a functional group or an organic group or organosiloxane group, and Y2 is either a functional group or an organic group or organosiloxane group, and where the functional group(s) is/are independently selected from the following: NH2, a secondary amine, a tertiary amine, acetamide, trifluoroacetamide, imidazole, urea, OH, an alkyoxy, acryloxy, acetate, SH, an alkylthiol, sulfonate, methanosulfonate, and cyanide, and salts thereof.
摘要翻译： 提供了一种用于在半导体器件的导电互连上形成覆盖层的工艺，该方法包括以下步骤：（a）在电介质层中提供一个或多个导体，以及（b）将覆盖层沉积在 所述一个或多个导体中的至少一些的上表面，其特征在于，所述方法还包括：（c）在沉积覆盖层之前使介电层与液相中的有机化合物反应的步骤，所述 具有以下通式的有机化合物：（I）其中X是官能团，R是有机基团或有机硅氧烷基团，Y1是官能团或有机基团或有机硅氧烷基团，Y2是官能团或 有机基团或有机硅氧烷基团，并且其中官能团独立地选自以下：NH 2，仲胺，叔胺，乙酰胺，三氟乙酰胺，咪唑，脲，OH，烷氧基，丙烯酸 xy，乙酸酯，SH，烷基硫醇，磺酸酯，甲磺酸酯和氰化物，及其盐。
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7.发明授权公开(公告)号：US07803719B2
公开(公告)日：2010-09-28
申请号：US12280477
申请日：2006-02-24
CPC分类号： H01L21/76829 , C23C18/122 , C23C18/1225 , C23C18/1893 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3105 , H01L21/3122 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device including a layer of the passivating coupling material, and a method of manufacturing such a semiconductor device are also contemplated.
摘要翻译： 用于钝化半导体器件中的电介质层的材料具有在随后的工艺步骤中允许或至少促进液相金属沉积的分子结构。 预期的材料可以由多种有机组分构成。 包括钝化耦合材料层的半导体器件，以及制造这种半导体器件的方法也被考虑。
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8.发明申请INTEGRATED SYSTEM FOR SEMICONDUCTOR SUBSTRATE PROCESSING USING LIQUID PHASE METAL DEPOSITION 审中-公开使用液相金属沉积的半导体基板处理的集成系统公开(公告)号：US20090301867A1
公开(公告)日：2009-12-10
申请号：US12280482
申请日：2006-02-24
申请人： Janos Farkas , Cindy Goldberg , Katie Yu , Srdjan Kordic
发明人： Janos Farkas , Cindy Goldberg , Katie Yu , Srdjan Kordic
CPC分类号： H01L21/02126 , H01L21/02118 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/288 , H01L21/3121 , H01L21/31633 , H01L21/31695 , H01L21/67207 , H01L21/6723 , H01L21/76814 , H01L21/76843
摘要： A system for processing a semiconductor substrate during fabrication of semiconductor devices provides a plurality of semiconductor substrate processing stations in a physically integrated system, as well as a semiconductor substrate transport system for transporting a semiconductor substrate between the respective processing stations. In particular, the processing system according to the present invention favors the use of liquid phase process steps, particularly deposition process steps, instead of gas or vapor phase processing. Even more particularly, the system contemplates deposition of a metallic barrier layer 30 on the semiconductor substrate in liquid phase.
摘要翻译： 在半导体器件制造期间处理半导体衬底的系统在物理集成系统中提供多个半导体衬底处理站，以及用于在各个处理站之间传输半导体衬底的半导体衬底传输系统。 特别地，根据本发明的处理系统有利于使用液相工艺步骤，特别是沉积工艺步骤，而不是气相或气相处理。 更具体地，系统考虑在液相中在金属阻挡层30上沉积在半导体衬底上。
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9.发明申请SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND PASSIVATING COUPLING MATERIAL COMPRISING MULTIPLE ORGANIC COMPONENTS FOR USE IN A SEMICONDUCTOR DEVICE 有权包括耦合电介质层和金属层的半导体器件，其制造方法和包含多个有机组件的钝化耦合材料在半导体器件中的使用公开(公告)号：US20090115031A1
公开(公告)日：2009-05-07
申请号：US12280477
申请日：2006-02-24
IPC分类号： H01L23/58 , C04B41/46 , H01L21/312 , B05D5/12
CPC分类号： H01L21/76829 , C23C18/122 , C23C18/1225 , C23C18/1893 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3105 , H01L21/3122 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device including a layer of the passivating coupling material, and a method of manufacturing such a semiconductor device are also contemplated.
摘要翻译： 用于钝化半导体器件中的电介质层的材料具有在随后的工艺步骤中允许或至少促进液相金属沉积的分子结构。 预期的材料可以由多种有机组分构成。 包括钝化耦合材料层的半导体器件，以及制造这种半导体器件的方法也被考虑。
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10.发明授权Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereor, and material for coupling a dielectric layer and a metal layer in a semiconductor device 有权包括耦合电介质层和金属层的半导体器件，其制造方法以及用于在半导体器件中耦合电介质层和金属层的材料公开(公告)号：US07951729B2
公开(公告)日：2011-05-31
申请号：US12705038
申请日：2010-02-12
申请人： Janos Farkas , Srdjan Kordic , Cindy Goldberg
发明人： Janos Farkas , Srdjan Kordic , Cindy Goldberg
CPC分类号： H01L21/3105 , C04B35/5603 , C04B35/565 , C04B2235/483 , C08G77/60 , C08L83/16 , C09D183/16 , H01L21/02063 , H01L21/02126 , H01L21/02164 , H01L21/02203 , H01L21/288 , H01L21/76801 , H01L21/7682 , H01L21/76838
摘要： A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material.
摘要翻译： 一种钝化耦合材料，一方面使半导体器件中的电介质层钝化，另一方面，用于在随后的工艺步骤中允许或至少促进液相金属沉积。 在具体实例中，电介质层可以是具有理想的降低介电常数k的多孔材料，并且钝化耦合材料提供空间屏蔽基团，其基本上阻止环境水分吸附和吸收到多孔介电层中。 与金属沉积相比，钝化耦合材料还提供金属成核侧，用于促进金属沉积在液相中，而不存在钝化偶联材料。 使用液相金属沉积工艺有助于随后的半导体器件的制造。 在一个实例中，钝化偶联材料在其化学组成中具有多个Si原子，这有利地增加了材料的热稳定性。
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