摘要:
A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by growing microwave powder or snow. The microwave powder or snow is grown by introducing a reaction gas comprised of precursor compounds of the magnetic material into a substantially enclosed reaction vessel. The reaction gas is energized by providing a source of microwave energy coupled to the substantially enclosed reaction vessel while maintaining the reaction gas pressure high enough to form the powdery microwave polymerizate, condensate, or precipitate, i.e., microwave snow. The solid particles of microwave snow have a morphology characterized as being one or more of (i) amorphous; (ii) microcrystalline; or (iii) polycrystalline. The grains within the solid have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the atomized solid particles are heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.
摘要:
A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by : (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by controlled vaporization of precursor elements of the alloy into an inert atmosphere, with subsequent controlled vapor phase condensation. This may be accomplished by vaporizing a precursor type alloy in a plasma torch, such as an argon torch, a hydrogen torch, or other electro-arc torch to form a particulate fine grain alloy. The resulting product of this alternative method is a particulate fine grain alloy. The solid particles have a morphology characterized as being one or more of (i) amorphous; (ii) microcrystalline; or (iii) polycrystalline. The grains within the solid have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the fine grain solid particles are heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.
摘要:
A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 8 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by: (a) forming a solution of reducible precursor compounds of the magnetic material; and (b) thereafter reducing the reducible, precursor compounds and forming a precipitate thereof. The precipitate has a morphology characterized as being one or more of (i) amorphous, (ii) microcrystalline, or (iii) polycrystalline. The grains within the precipitate have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the precipitated solid is heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.
摘要:
An improved method of depositing thin films onto a substrate with microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
摘要:
An improved method of fabricating the thin film layers of an electrostatic image producing device utilizing microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
摘要:
A method of depositing a semiconductor alloy film onto a substrate by activating groups of free radicals and incorporating desired ones of the activated groups into the film.
摘要:
A process for making amorphous semiconductor alloy films and devices at high deposition rates utilizes microwave energy to form a deposition plasma. The alloys exhibit high quality electronic properties suitable for many applications including photovoltaic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, and introducing into the vessel reaction gases including at least one semiconductor containing compound. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reactions gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF.sub.4). To all of the foregoing, hydrogen (H.sub.2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammonia gas to widen the band gap of the alloys.
摘要:
A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.
摘要:
A low pressure process for making amorphous semiconductor alloy films and devices at high deposition rates and high gas conversion efficiencies utilizes microwave energy to form a deposition plasma. The alloys exhibit high-quality electronic properties suitable for many applications including photovoltaic and electrophotographic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, introducing into the vessel at least one reaction gas and evacuating the vessel to a low enough deposition pressure to deposit the film at high deposition rates with high reaction gas conversion efficiencies without any significant powder or polymeric inclusions. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reaction gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF.sub.4). To all of the foregoing, hydrogen (H.sub.2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammonia gas to widen the band gap of the alloys.
摘要:
A process and apparatus for depositing a film from a gas involves introducing the gas to a deposition environment containing a substrate, heating the substrate, and irradiating the gas with radiation having a preselected energy spectrum, such that a film is deposited onto the substrate. In a preferred embodiment, the energy spectrum of the radiation is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member exposed at a first surface thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface to minimize deposition thereon.