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    Method for fabricating a semiconductor component based on GaN
    2.
    发明授权
    Method for fabricating a semiconductor component based on GaN 有权
    用于制造基于GaN的半导体元件的方法

    公开(公告)号：US08809086B2

    公开(公告)日：2014-08-19

    申请号：US13398425

    申请日：2012-02-16

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L21/20

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

    摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

    Method for fabricating a semiconductor component based on GaN
    3.
    发明授权
    Method for fabricating a semiconductor component based on GaN 有权
    用于制造基于GaN的半导体元件的方法

    公开(公告)号：US08129209B2

    公开(公告)日：2012-03-06

    申请号：US12648566

    申请日：2009-12-29

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L21/20

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

    摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

    Method for fabricating a semiconductor component based on GaN
    4.
    发明授权
    Method for fabricating a semiconductor component based on GaN 有权
    用于制造基于GaN的半导体元件的方法

    公开(公告)号：US07691656B2

    公开(公告)日：2010-04-06

    申请号：US10417611

    申请日：2003-04-17

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L21/20

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

    摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底主体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN层，GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

    Light emitting-diode chip and a method for producing same
    7.
    发明授权
    Light emitting-diode chip and a method for producing same 有权
    发光二极管芯片及其制造方法

    公开(公告)号：US07319247B2

    公开(公告)日：2008-01-15

    申请号：US10258340

    申请日：2001-03-16

    申请人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow

    发明人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only. The p-type epitaxial layer (5) is provided on substantially the full area of the main surface (9) facing away from the n-conductive epitaxial layer (4) with a reflective, bondable p-contact layer (6), and the n-conductive epitaxial layer (4) is provided on its main surface facing away from the p-conductive epitaxial layer (5) with an n-contact layer (7) that covers only a portion of said main surface (8). The decoupling of light from the chip (1) takes place via the bare region of the main surface (8) of the n-conductive epitaxial layer (4) and via the chip sides (14).

    摘要翻译： 一种LED芯片，其包括导电和无辐射基板，其中外延层序列（3）在其p侧（9）的基本上整个区域上设置有反射的，可粘合的p接触层（6）。 衬底（2）在其主表面（10）上设置为背离外延层序列（3），接触金属化（7）仅覆盖所述主表面（10）的一部分，并且光 芯片（1）经由衬底（2）的主表面（10）的裸露区域和芯片侧面（14）发生。 另外的LED芯片仅具有外延层。 p型外延层（5）通过反射型可结合的p接触层（6）设置在主表面（9）的背离n导电外延层（4）的大致整个区域上，并且 n导电外延层（4）在其主表面上设置有远离p导电外延层（5）的n-接触层（7），其仅覆盖所述主表面（8）的一部分。 来自芯片（1）的光的去耦通过n导电外延层（4）的主表面（8）的裸露区域和芯片侧（14）进行。

    Radiation-emitting semiconductor element and method for producing the same
    8.
    发明授权
    Radiation-emitting semiconductor element and method for producing the same 有权
    辐射发射半导体元件及其制造方法

    公开(公告)号：US07691659B2

    公开(公告)日：2010-04-06

    申请号：US11067349

    申请日：2005-02-25

    申请人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

    发明人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

    IPC分类号： H01L21/00

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

    摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

    摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。

    Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor
    10.
    发明授权
    Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor 有权
    用于制造基于III-V族氮化物半导体的辐射发射半导体芯片的方法

    公开(公告)号：US07105370B2

    公开(公告)日：2006-09-12

    申请号：US11017615

    申请日：2004-12-20

    申请人： Stefan Bader ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer

    发明人： Stefan Bader ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer

    IPC分类号： H01L21/00

    CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01S5/34333

    摘要： A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III–V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.

    摘要翻译： 一种制造具有基于III-V族氮化物半导体材料的薄膜元件的辐射发射半导体芯片的方法包括以下步骤：在外延衬底上沉积薄膜元件层序列。 将薄膜元件接合到载体上，并且将外延基板从薄膜元件移除。 外延衬底具有由PolySiC或PolyGaN制成的衬底主体或由SiC，GaN或蓝宝石构成的衬底主体，其通过结合层与生长层接合，并且薄膜元件的层序列通过外延沉积 。