摘要:
Disclosed is a diode-pumped solid-state laser having an asymmetrical optical resonator provided with at least two resonator mirrors, inside said resonator being provided at least one thermal lens having an optical refractive power D and having two principal planes respectively and said resonator being definable by the following stability criteria: 0
摘要:
Disclosed is a diode-pumped solid-state laser having an asymmetrical optical resonator provided with at least two resonator mirrors, inside said resonator being provided at least one thermal lens having an optical refractive power D and having two principal planes respectively and said resonator being definable by the following stability criteria: 0
摘要:
Disclosed is a diode-pumped solid-state laser having at least one intracavity positioned laser crystal having at least one optical axis longitudinally to which at least one pumped-light beam emitted from at least one pumped-light source is incident on the laser crystal. The invention is distinguished by the pumped-light beam having a beam diameter corresponding to at least 1.25 times the beam cross section of a laser beam forming inside the resonator with the oscillation mode TEM00.
摘要:
The invention relates to a gas discharge laser including a discharge tube (1), in which a gas is present and which has at least one aperture (19) through which a laser beam emerges or at which a laser beam is reflected. For withdrawing a partial amount of the gas contained in the discharge tube (1), at least one gas withdrawal point (9) is present, from which the withdrawn gas is supplied to a sintered filter (11) for being cleaned. The cleaned gas may be led in via at least one gas inlet point (27) in the zone of the aperture (19). The invention further relates to a method of operating a gas discharge laser, and the use of a sintered filter for cleaning gas withdrawn from a discharge tube (1) of a gas discharge laser.
摘要:
A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an F2 gas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.
摘要:
Devices for the evaporation of liquid, in particular water, have an evaporation mat which is wetted with the liquid and on which the liquid evaporates. The evaporation mat comprises a textile fabric (1) having fibres, wherein the surface of the fibres is coated with a covering (2) which comprises a cured reaction product of a polyamine and a polyalkylene glycol etherified with end groups of the structure X—CH2[CH(OR)]wCH2—, in which structure w is an integer from 0 to 1 and, when w is 0, X is a halogen, and, when w is 1, X is halogen and R is hydrogen, or X and R together are —O—. Preferably, the evaporation mat is a consolidated nonwoven which contains fibres made of a synthetic thermoplastic which are bonded to one another by means of a thermoplastic hotmelt glue at their intersection points. The devices are used for air humidification, for concentrating solutions, or for evaporative cooling.
摘要:
A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an F2 gas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.
摘要:
A suction system in a laser device for the bonding of prosthesis parts in dental technology formed of an annular suction nozzle that concentrically surrounds the laser focusing unit or an annular nozzle encircling the latter for the introduction of protective inert gas. The lower rim of the laser focusing unit or the annular nozzle for the supply of protective gas projects beyond the annular suction nozzle by 10 to 25 mm.