公开(公告)号：US5437020A

公开(公告)日：1995-07-25

申请号：US969723

申请日：1992-10-03

申请人： Steven Wells ,  Robert N. Hasbun ,  Richard P. Garner

发明人： Steven Wells ,  Robert N. Hasbun ,  Richard P. Garner

IPC分类号： G06F3/06 ,  G11C29/00 ,  G06F13/10

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G11C29/88 ,  G06F2003/0694 ,  G06F2003/0697

摘要： A method of detecting the loss of a sector of data stored in a solid state memory disk is described. Detection is enabled by the creation of a header for each sector number during formatting. Each header includes a logical sector number equal to a sector number. Location and loss of a sector of data associated with a particular sector number is aided by a sector header translation table. The sector header translation table stores an offset, or pointer, for each sector number that points to its associated header. The method by which the sector header translation table is generated aids in the detection of lost sectors of data. Upon power-up, each offset in the sector header translation table is initialized to an initial, invalid value. Afterward, the nonvolatile semiconductor memory is scanned and the sector header translation table is modified so that for each sector number it points to the header including a logical sector number equal to the sector number. As a result, retrieving an invalid offset from the sector header translation table indicates that the sector of data associated with the sector number is lost.Circuitry for detecting the loss of sector data stored in a solid state memory disk is also described.

摘要翻译： 描述了检测存储在固态存储盘中的数据扇区丢失的方法。 通过在格式化期间为每个扇区号创建报头来启用检测。 每个报头包括等于扇区号的逻辑扇区号。 与特定扇区号相关联的数据扇区的位置和丢失由扇区标题转换表辅助。 扇区标题转换表存储针对其关联报头的每个扇区号的偏移量或指针。 产生扇区标题转换表的方法有助于检测丢失的数据扇区。 上电时，扇区头部转换表中的每个偏移量初始化为初始无效值。 之后，扫描非易失性半导体存储器并修改扇区标题转换表，使得对于每个扇区号，它指向包括等于扇区号的逻辑扇区号的报头。 结果，从扇区头转换表中检索无效偏移指示与扇区号相关联的数据扇区丢失。 还描述了用于检测存储在固态存储盘中的扇区数据丢失的电路。

公开(公告)号：US5822781A

公开(公告)日：1998-10-13

申请号：US969131

申请日：1992-10-30

申请人： Steven Wells ,  Robert N. Hasbun ,  Kurt Robinson

发明人： Steven Wells ,  Robert N. Hasbun ,  Kurt Robinson

IPC分类号： G06F3/06 ,  G06F3/08 ,  G06F12/00 ,  G06F12/02 ,  G11C16/02 ,  G06F12/04

CPC分类号： G06F3/0688 ,  G06F12/0246 ,  G06F3/0625 ,  G06F3/0626 ,  G06F3/064 ,  Y02B60/1225 ,  Y02B60/1246

摘要： A solid state memory disk that stores data on a sector basis is described. The solid state disk includes an array of FLASH memory devices, which store the sectors of data. Each block of memory within the FLASH array includes data space for storing many sectors of data and a block sector translation table. The block sector translation table identifies each sector of data stored in the block's data space by a sector number. The solid state disk also includes a controller. Among its many responsibilities, the controller manages the writing of sector data into the array and the reading of sectors of data from the array. The controller responds to a write request by seeking an earlier version of the sector which has a logical sector number equal to the sector's sector number and marking that sector dirty. Afterward, the controller allocates free memory space for the sector of data. The sector of data is then written into the allocated memory space. The controller reads sectors of data by seeking a sector header translation table to convert sector numbers into physical addresses.

摘要翻译： 描述了以扇区为基础存储数据的固态存储盘。 固态盘包括存储数据扇区的闪存存储器件阵列。 FLASH阵列内的每个存储块包括用于存储许多数据扇区的数据空间和块扇区转换表。 块扇区转换表通过扇区号识别存储在块的数据空间中的数据的每个扇区。 固态盘还包括控制器。 在其许多职责中，控制器管理将阵列数据写入阵列和从阵列读取数据的扇区。 控制器通过寻找具有等于扇区扇区号的逻辑扇区号并标记扇区脏的扇区的较早版本来响应写请求。 之后，控制器为数据扇区分配空闲的空间。 然后将数据扇区写入分配的存储空间。 控制器通过寻找扇区头转换表来将扇区号转换为物理地址来读取数据扇区。

公开(公告)号：US5740395A

公开(公告)日：1998-04-14

申请号：US969760

申请日：1992-10-30

申请人： Steven Wells ,  Robert N. Hasbun

发明人： Steven Wells ,  Robert N. Hasbun

IPC分类号： G06F3/06 ,  G06F3/08 ,  G06F12/00 ,  G06F12/02 ,  G11C16/02 ,  G11C17/00

CPC分类号： G06F3/0607 ,  G06F12/0246 ,  G06F3/0652 ,  G06F3/0676 ,  G06F2212/7205 ,  Y10S707/99953 ,  Y10S707/99956

摘要： A method of cleaning-up a solid state memory disk is described. Clean-up begins with the selection of a focus block for clean-up. Next, on a sector-by-sector basis, memory is allocated within a destination block to store valid sectors of user data. User data is then copied into the destination block on a sector-by-sector basis. Afterward, the focus block is erased, converting dirty sectors into free memory without loss of valid sectors of data.

摘要翻译： 描述了一种清理固态存储盘的方法。 清理开始时，选择一个对焦块进行清理。 接下来，逐扇区地，在目的地块内分配存储器以存储用户数据的有效扇区。 然后将用户数据逐个地逐个拷贝到目的地块中。 之后，焦点块被擦除，将脏扇区转换为空闲存储器，而不会丢失有效的数据扇区。

公开(公告)号：US5822256A

公开(公告)日：1998-10-13

申请号：US811194

申请日：1997-03-05

申请人： Mark E. Bauer ,  Steven Wells ,  David M. Brown ,  Johnny Javanifard ,  Sherif Sweha ,  Robert N. Hasbun ,  Gary J. Gallagher ,  Mamun Rashid ,  Rodney R. Rozman ,  Glen Hawk ,  George Blanchard ,  Mark Winston ,  Richard D. Pashley

发明人： Mark E. Bauer ,  Steven Wells ,  David M. Brown ,  Johnny Javanifard ,  Sherif Sweha ,  Robert N. Hasbun ,  Gary J. Gallagher ,  Mamun Rashid ,  Rodney R. Rozman ,  Glen Hawk ,  George Blanchard ,  Mark Winston ,  Richard D. Pashley

IPC分类号： G11C11/56 ,  G11C29/00 ,  G11C29/44 ,  G11C7/00

CPC分类号： G11C29/88 ,  G11C11/5621 ,  G11C11/5628 ,  G11C29/44 ,  G11C2211/5641

摘要： A method and circuitry are described that permit one to utilize a partially functional integrated circuit memory. A memory array is segregated into separate blocks that can each be isolated to minimize the amount of the memory array rendered unusable by a defect. Circuitry is also provided to program memory cells within the array to one of at least three amounts of charge and thereby increase the amount of storage provided by the remaining functional blocks.

摘要翻译： 描述了允许使用部分功能的集成电路存储器的方法和电路。 存储器阵列被分离成单独的块，每个块可以被隔离以最小化由缺陷使得不可用的存储器阵列的量。 还提供电路以将阵列内的存储器单元编程为至少三个电荷量之一，从而增加剩余功能块提供的存储量。

公开(公告)号：US5586285A

公开(公告)日：1996-12-17

申请号：US20063

申请日：1993-02-19

申请人： Robert N. Hasbun ,  Steven Wells

发明人： Robert N. Hasbun ,  Steven Wells

IPC分类号： G06F3/06 ,  G06F12/02 ,  G06F13/10

CPC分类号： G06F3/0601 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/401 ,  Y02B60/1225

摘要： A solid state memory disk with increased reserve memory is described. The solid state memory disk includes an array of solid state memory devices for storing user data and reserve memory, which includes both free memory and dirty memory. The solid state memory disk also includes a controller, a clean-up state machine, and a data compressor. The data compressor increases reserve memory by compressing data received from a host and coupling compressed data to the array of memory devices under the control of the controller. In response to write commands from the host, the controller writes a first sector data, which has been compressed, to a first location in a first block within a memory device. Reserve memory within the array is thus increased, so long as the maximum number of sectors the host is allowed to write is less the average compression ratio of the data compressor multiplied by the capacity of the solid state disk. A method of increasing reserve memory in a solid state disk is also described.

摘要翻译： 描述了具有增加的备用存储器的固态存储盘。 固态存储盘包括用于存储用户数据和预留存储器的固态存储器件阵列，其包括空闲存储器和脏存储器。 固态存储盘还包括控制器，清理状态机和数据压缩器。 数据压缩器通过压缩从主机接收的数据来增加预留存储器，并将压缩数据耦合到控制器控制下的存储器件阵列。 响应于来自主机的写命令，控制器将已压缩的第一扇区数据写入存储器设备内的第一块中的第一位置。 因此，只要主机允许写入扇区的最大数量少于数据压缩器的平均压缩比乘以固态磁盘的容量，阵列中的保留内存就会增加。 还描述了在固态盘中增加储备存储器的方法。

公开(公告)号：US5535369A

公开(公告)日：1996-07-09

申请号：US485661

申请日：1995-06-07

申请人： Steven Wells ,  Robert N. Hasbun ,  Sara Domonkos ,  Steven S. Barbarich

发明人： Steven Wells ,  Robert N. Hasbun ,  Sara Domonkos ,  Steven S. Barbarich

IPC分类号： G06F3/06 ,  G06F12/02

CPC分类号： G06F3/0601 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/401

摘要： A method of allocating free physical memory in a solid state memory disk for a sector of data of a given size is described. Allocation begins by determining whether sufficient free memory remains in the block to which the previous sector of data was written. If there is not sufficient free memory remaining, then selection of another block to allocate the sector of data begins. The selection is based on the sum of the amount of free memory in a selected block and one of the following: 1) the amount of invalid data in the block; 2) the cycle count for the block; 3) the amount of invalid data as compared to a maximum amount of invalid data for all non-volatile memory devices associated with the block; and 4) the number of blocks already allocated to all non-volatile memory devices associated with the block. Afterward, the block with the greatest amount of available memory is selected to store the sector of data.

摘要翻译： 描述了在固态存储盘中为给定尺寸的数据扇区分配空闲物理存储器的方法。 通过确定是否在写入先前扇区数据的块中保留足够的可用内存来开始分配。 如果没有足够的可用内存剩余，则选择另一个块来分配数据扇区。 该选择基于所选块中的空闲存储器的总和与以下之一：1）块中的无效数据量; 2）块的周期计数; 3）与与块相关联的所有非易失性存储器件的无效数据的最大量的无效数据量; 以及4）已经分配给与该块相关联的所有非易失性存储器件的块的数量。 之后，选择具有最大可用内存量的块来存储数据扇区。

公开(公告)号：US5479633A

公开(公告)日：1995-12-26

申请号：US969763

申请日：1992-10-30

申请人： Steven Wells ,  Robert N. Hasbun

发明人： Steven Wells ,  Robert N. Hasbun

IPC分类号： G06F3/06 ,  G06F11/10 ,  G06F13/10

CPC分类号： G06F3/0601 ,  G06F11/1068 ,  G06F2003/0694 ,  G06F2003/0697

摘要： A method of initiating and controlling background clean-up of a solid state memory disk is described. Background clean-up begins by enabling a clean-up state machine after completion of a write command. Next, a next state pointer is set to an initial state for evaluating whether clean-up is necessary. Actual execution of background clean-up begins when the processing unit allocates execution time for clean-up. As each state is executed, the next state pointer is reset so that it points to the next clean-up state to be executed. States pointed to by the next state pointer are executed until a block of the solid state memory disk is cleaned-up.Also described is a method of automatically performing foreground clean-up of a solid state memory disk. A method of forcing clean-up is also described.

摘要翻译： 描述了启动和控制固态存储盘的后台清理的方法。 完成写入命令后，启用清理状态机可以开始后台清理。 接下来，下一个状态指针被设置为用于评估是否需要清理的初始状态。 当处理单元分配清理的执行时间时，开始执行背景清理。 当每个状态被执行时，下一个状态指针被重置，使得它指向待执行的下一个清理状态。 执行下一个状态指针所指向的状态，直到固态存储器盘的块被清理为止。 还描述了一种自动执行固态存储盘的前景清理的方法。 还描述了强制清理的方法。

公开(公告)号：US20110220497A1

公开(公告)日：2011-09-15

申请号：US12883115

申请日：2010-09-15

申请人： Steven Wells ,  Gerl Burkhardt ,  Anthony Thai

发明人： Steven Wells ,  Gerl Burkhardt ,  Anthony Thai

IPC分类号： G01N27/30

CPC分类号： G01N27/401 ,  Y10T29/49002

摘要： An electrochemical sensor is provided that includes a housing having an outer wall, a plurality of longitudinal chambers disposed within the outer wall, and a reference chamber housing a reference electrode. Ionic communication between the target fluid and the reference electrode must pass sequentially through each of longitudinal chambers from a first longitudinal chamber to the reference chamber. In this manner, the sensor provides generally a long, tortuous flow path, or salt bridge, between the target fluid and the reference electrode, resulting in a high resistance factor for the sensor.

摘要翻译： 提供了一种电化学传感器，其包括具有外壁，设置在外壁内的多个纵向室和容纳参考电极的参考室的壳体。 目标流体和参比电极之间的离子通信必须依次通过每个纵向室从第一纵向腔室到参考室。 以这种方式，传感器通常在目标流体和参考电极之间提供长而弯曲的流动路径或盐桥，导致传感器的高电阻系数。

公开(公告)号：US5053990A

公开(公告)日：1991-10-01

申请号：US157361

申请日：1988-02-17

申请人： Jerry A. Kreifels ,  Alan Baker ,  George Hoekstra ,  Virgil N. Kynett ,  Steven Wells ,  Mark Winston

发明人： Jerry A. Kreifels ,  Alan Baker ,  George Hoekstra ,  Virgil N. Kynett ,  Steven Wells ,  Mark Winston

IPC分类号： G11C17/00 ,  G06F12/00 ,  G11C16/02 ,  G11C16/10 ,  G11C16/16 ,  G11C16/34 ,  G11C29/00 ,  G11C29/14

CPC分类号： G11C16/3445 ,  G11C16/10 ,  G11C16/16 ,  G11C16/3436 ,  G11C16/3459

摘要： A semiconductor flash EPROM/EEPROM device which includes a command port for receiving instruction on a data line and providing control signals to a memory for providing program and erase functions, a method to program and erase the memory. A program sequence is comprised of setting up a program command during a first write cycle, preforming a second write cycle to load address to address register and data to to a data register, programming during a program cycle and writing a program verify command during a third write cycle to verify the programmed data during a read cycle. An erase sequence is comprised of writing a setup erase command during a first write cycle, an erase command during a second write cycle providing the erasure during an erase cycle, writing the erase verify command during a third write cycle which also addresses the address of the memory and providing erase verification during a read cycle. Both the erase and program cycles provide for measured incremental erasing and programming.

摘要翻译： 一种半导体闪存EPROM / EEPROM器件，包括用于在数据线上接收指令并向存储器提供控制信号以提供编程和擦除功能的命令端口，编程和擦除存储器的方法。 程序序列包括在第一写周期期间设置程序命令，执行第二写周期以将地址寄存器加载到地址寄存器和数据到数据寄存器，在程序周期期间进行编程以及在第三写入期间写入程序验证命令 写周期以在读周期中验证编程数据。 擦除序列包括在第一写周期期间写入建立擦除命令，在擦除周期期间提供擦除的第二写周期期间的擦除命令，在第三写周期期间写入擦除验证命令，该第三写周期还解决 存储器并在读周期期间提供擦除验证。 擦除和编程周期都提供测量的增量擦除和编程。

公开(公告)号：US20110114484A1

公开(公告)日：2011-05-19

申请号：US13008839

申请日：2011-01-18

申请人： Steven Wells ,  Gert Burkhardt ,  Anthony Thai

发明人： Steven Wells ,  Gert Burkhardt ,  Anthony Thai

IPC分类号： G01N27/28

CPC分类号： G01N27/4035 ,  Y10T29/49002

摘要： An electrochemical sensor is provided that includes a housing having an outer wall, an axial bore circumscribed by the outer wall, and a barrier wall that aids in defining a reference cavity. The housing further including a plurality of cross members in spaced relation to one another disposed between the axial bore and the outer wall, each cross member defining an aperture. A junction plug is disposed at the distal end of the housing. The junction plug comprises a porous material that enables ionic flow through the junction plug. The sensor enables ionic communication between the target fluid and the reference electrode within the reference cavity through the apertures of the plurality of cross members. In this manner, the sensor provides generally a long, tortuous flow path, or salt bridge, between the target fluid and the reference electrode, resulting in a high resistance factor for the sensor.

摘要翻译： 提供一种电化学传感器，其包括具有外壁，由外壁限定的轴向孔的壳体和有助于限定参考腔的阻挡壁。 壳体还包括多个横向构件，其彼此间隔开设置在轴向孔和外壁之间，每个横向构件限定孔。 连接插头设置在壳体的远端。 连接插塞包括多孔材料，其能够使离子流通过接头插塞。 该传感器通过多个横向构件的孔径实现目标流体和参考电极之间的离子连通。 以这种方式，传感器通常在目标流体和参考电极之间提供长而曲折的流动路径或盐桥，导致传感器的高电阻系数。