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1.发明授权
公开(公告)号：US5596413A
公开(公告)日：1997-01-21
申请号：US516368
申请日：1995-08-17
CPC分类号： G03F9/70
摘要： Through-the-lens alignment during deep UV lithographic processing in the manufacture of VLSI is accomplished without shifting the mask or wafer from the exposure position. Introduction and extraction of alignment light of actinic wavelength depends on beam routing due to diffraction from an interference grating. The path of alignment light is within the focusing system but does not impinge on the focused pattern.
摘要翻译： 在制造VLSI期间的深UV光刻处理期间实现透镜对准，而不会将掩模或晶片从曝光位置移位。 介绍和提取光化波长的对准光取决于由干涉光栅的衍射引起的光束路由。 对准光的路径在聚焦系统内，但不会撞击聚焦图案。
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公开(公告)号：US5439781A
公开(公告)日：1995-08-08
申请号：US59924
申请日：1993-05-10
IPC分类号： G03F7/20 , H01L21/027 , G03C5/16 , G21K5/00
CPC分类号： B82Y10/00 , G03F7/70008 , G03F7/70166 , G03F7/702 , Y10S430/167 , Y10S430/168
摘要： Devices built to design rules .ltoreq.0.25 .mu.m are pattern delineated by use of synchrotron-emitted x-ray radiation using a condenser which collects over a collection arc of at least 100 mrad. Condenser designs provide for processing of collected radiation to tailor characteristics such as direction and divergence. Pattern delineation by proximity printing as well as by projection printing is described. Forms of projection printing include reduction ringfield projection as by 5:1 mask:image reduction.
摘要翻译： 用于设计规则的设备
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公开(公告)号：US5339346A
公开(公告)日：1994-08-16
申请号：US65331
申请日：1993-05-20
申请人： Donald L. White
发明人： Donald L. White
IPC分类号： G03F7/20 , G21K1/06 , H01L21/027 , G21K5/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/702 , G03F7/70233 , G21K1/06
摘要： Submicron device fabrication entailing ringfield x-ray pattern delineation is facilitated by use of a condenser including a faceted collector lens. The collector lens is constituted of paired facets, symmetrically placed about an axis of a laser-pumped plasma source. Each of the members of a pair produce an image of the entire illumination field so that inhomogeneities in illumination intensity are compensated within each composite image as produced by a particular pair.
摘要翻译： 通过使用包括刻面收集透镜的聚光体，促进了引起环形x射线图案描绘的亚微米器件制造。 收集透镜由成对的小面构成，围绕激光泵浦等离子体源的轴对称放置。 一对的每个成员产生整个照明场的图像，使得在由特定对产生的每个合成图像内的照明强度的不均匀性被补偿。
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公开(公告)号：US06847433B2
公开(公告)日：2005-01-25
申请号：US10159268
申请日：2002-06-03
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/70633 , G03F7/70783 , Y10S430/168
摘要： A deformable holder, system, and process where long range errors (any of lithography, metrology, or overlay errors) between the image of a mask and an existing pattern on a wafer from a number of potential sources are corrected. The long range errors are determined using either a through-the-lens alignment metrology system or an around-the-lens metrology system. Deformation values are determined to compensate for the longe range errors. The deformation values are determined by either solving simultaneous equations or by finite-element linear-stress-analysis (FEA). The mask or wafer is then distorted, in-plane, by an amount related to the determined deformation values using an actuator such an a piezoelectric ceramic to push or pull the mask or wafer to substantially realign the projected image of the mask and the existing pattern on the wafer.
摘要翻译： 一种可变形保持器，系统和工艺，其中修正了掩模图像与来自多个潜在源的晶片上的现有图案之间的长距离误差（任何光刻，测量或重叠误差）。 远距离误差使用透镜对准测量系统或镜片周围测量系统来确定。 确定变形值以补偿长度范围误差。 变形值通过求解联立方程或有限元线性应力分析（FEA）来确定。 然后使用诸如压电陶瓷的致动器来将掩模或晶片在平面内扭曲与所确定的变形值相关的量，以推动或拉动掩模或晶片以基本上重新调整掩模的投影图像和现有图案 在晶圆上。
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公开(公告)号：US5498923A
公开(公告)日：1996-03-12
申请号：US177500
申请日：1994-01-05
摘要： A single crystal fluorescent material is used in the conversion of a short wavelength image. Conversion to a long wavelength image in the visible spectrum permits use of conventional glass optics for visual observation of UV and x-ray images. An illustrative use is in inspection of masks designed for use in fabrication of large scale integrated circuitry built to submicron design rules.
摘要翻译： 在短波长图像的转换中使用单晶荧光材料。 在可见光谱中转换成长波长图像允许使用传统的玻璃光学器件来目视观察UV和X射线图像。 一个说明性的用途是检查设计用于制造基于亚微米设计规则的大规模集成电路的掩模。
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6.发明授权Sub-micron device fabrication with a phase shift mask having multiple values of phase delay 失效具有相位延迟的多个值的相位移动面板的子麦克风装置制造
公开(公告)号：US5229255A
公开(公告)日：1993-07-20
申请号：US673614
申请日：1991-03-22
申请人： Donald L. White
发明人： Donald L. White
IPC分类号： G03F1/28 , G03F1/30 , H01L21/027
摘要： Fabrication of integrated circuits--electronic, photonic or hydrid--permits attainment of higher device density. Pattern delineation with smaller design rules than previously associated with delineating radiation of given wavelength is the consequence of use of phase masks. Compared with earlier used, binary valued phase masks, the multiple values of those on which this fabrication depends permits improved effectiveness in lessening of edge-smearing radiation of consequence (of diffraction-scattered delineating radiation at feature edges). Phase masking may provide, as well, for feature generation by interference, and for reduced intensity of unwanted image hot spots by diffraction.
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7.再颁专利Optical lithographical imaging system including optical transmission diffraction devices 失效光学光学成像系统包括光学透射衍射装置
公开(公告)号：USRE35753E
公开(公告)日：1998-03-24
申请号：US648796
申请日：1996-05-16
申请人： Eric L. Raab , Sheila Vaidya , Donald L. White
发明人： Eric L. Raab , Sheila Vaidya , Donald L. White
IPC分类号： G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/70241 , G03F7/70108 , G03F7/70125 , G03F7/70158
摘要： In an optical lithographical system (e.g., 100) for printing features of a patterned mask (e.g., 103) into a workpiece (e.g., 120), such as in a semiconductor device, a one- or two-dimensional (depending on the features of the mask) optical transmission phase-shift diffracting device (e.g., 107) is inserted between an optical condensor (e.g., 105) and the patterned mask whose features are to be printed into the workpiece. The diffracting device is designed so as to enable an imaging lens system (e.g., 102) to collect more than merely a single order of the resulting diffraction patterns of the features of the mask and, by varying the spatial periodicity of the diffracting device, to tailor the illumination incident on the mask in accordance with the features (e.g., 114, 115) of the mask.
摘要翻译： 在用于将图案化掩模（例如，103）的特征打印到工件（例如，120）中的光学系统（例如，100）中，例如在半导体器件中，一维或二维（取决于特征 的光传输相移衍射装置（例如，107）被插入在光学聚光器（例如，105）和其特征被打印到工件中的图案化掩模之间。 衍射装置被设计成使得成像透镜系统（例如，102）能够收集不仅仅是掩模的特征的所得到的衍射图案的单个顺序，并且通过将衍射装置的空间周期性改变为 根据掩模的特征（例如，114,115）调整入射在掩模上的照明。
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公开(公告)号：US5510230A
公开(公告)日：1996-04-23
申请号：US326444
申请日：1994-10-20
IPC分类号： G03F1/24 , G03F1/32 , G03F7/20 , H01L21/027
CPC分类号： G03F1/32 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70058 , G03F7/70233
摘要： The fabrication of integrated circuit devices built to design rules of 0.18 .mu.m and below uses patterning radiation in the EUV spectrum. Optimized processing conditions take advantage of independently developed EUV characteristics such as short resist absorption lengths.
摘要翻译： 用于设计0.18μm及以下的规格的集成电路器件的制造使用EUV光谱中的图案化辐射。 优化的加工条件利用独立开发的EUV特性，例如短的抗蚀剂吸收长度。
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公开(公告)号：US5217831A
公开(公告)日：1993-06-08
申请号：US673626
申请日：1991-03-22
申请人： Donald L. White
发明人： Donald L. White
IPC分类号： G03F1/28 , H01L21/027
CPC分类号： G03F1/28
摘要： Expedient fabrication of phase masks providing for many values of phase delay for exiting pattern delineating radiation depends upon a two-step procedure. Such masks offer improvement in ultimate device fabrication relative to that offered by prior binary-valued masks. In the first step, which may be carried out coincident with introduction of device feature information, apertures of appropriate size and distribution are produced in the relevant mask layer; in the second step material surrounding such apertures is heated to result in backflow-filling. The consequential layer thinning is such as to introduce the desired local change in phase delay.
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公开(公告)号：US4923301A
公开(公告)日：1990-05-08
申请号：US199106
申请日：1988-05-26
申请人： Donald L. White
发明人： Donald L. White
IPC分类号： G03F9/00 , H01L21/027 , H01L21/30
CPC分类号： G03F9/7049
摘要： A method for lithographic alignment utilized in the manufacture of integrated circuits is described. The procedure includes an initial calibration through the lens system to expose a calibration material in a diffraction grating pattern. An interference pattern is produced above the grating with intersecting laser beams. By adjusting the path and/or phase of these beams the interference pattern is aligned with the diffraction pattern to establish a calibration point corresponding to a reference intensity in the intensity of the diffracted light. A wafer to be exposed is then placed in the exposure tool and is aligned by observing the diffraction pattern from a diffraction grating fiducial mark induced by the calibrated interference pattern.
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