公开(公告)号：US20130344285A1

公开(公告)日：2013-12-26

申请号：US13988656

申请日：2011-11-07

申请人： Jennifer Y. Sun ,  Sumanth Banda

发明人： Jennifer Y. Sun ,  Sumanth Banda

IPC分类号： B32B7/12 ,  H01L21/02 ,  B32B9/00 ,  B32B3/26 ,  B32B9/04

CPC分类号： B32B7/12 ,  B32B3/266 ,  B32B9/005 ,  B32B9/041 ,  C09J183/00 ,  H01L21/02 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6831 ,  Y10T428/24322 ,  Y10T428/31663

摘要： Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using an adhesive material with desired characteristics. In one embodiment, an adhesive material suitable for joining semiconductor chamber components includes an adhesive material having a Young's-modulus lower than 300 psi. In another embodiment, a semiconductor chamber component includes a first surface disposed adjacent a second surface, and an adhesive material coupling the first and second surfaces, wherein the adhesive material has a Young's modulus lower than 300 psi.

摘要翻译： 本发明的实施例提供了适用于接合半导体处理室部件的坚固的接合材料。 其他实施例提供使用具有期望特性的粘合剂材料连接的半导体处理室部件。 在一个实施例中，适于接合半导体室部件的粘合剂材料包括具有低于300psi的杨氏模量的粘合剂材料。 在另一个实施例中，半导体室部件包括邻近第二表面设置的第一表面和连接第一和第二表面的粘合材料，其中粘合材料具有低于300psi的杨氏模量。

公开(公告)号：US20120118510A1

公开(公告)日：2012-05-17

申请号：US13294012

申请日：2011-11-10

申请人： Sumanth Banda ,  Jennifer Y. Sun

发明人： Sumanth Banda ,  Jennifer Y. Sun

IPC分类号： B32B38/10

CPC分类号： B32B38/10 ,  B32B2457/00 ,  H01J37/32082 ,  H01L21/67092 ,  H01L21/6831 ,  H01L21/68785 ,  Y10T156/1116 ,  Y10T156/1168

摘要： Embodiments of the invention provide a method for debonding chamber component used in a semiconductor processing chamber. In one embodiment, a method for debonding chamber components used in a semiconductor processing chamber includes providing a first chamber component and a second chamber component bonded by an adhesive material disposed at an interface defined between the first and the second chamber components, soaking the bonded first and the second chamber components into an organic solution for between about 8 hours to about 240 hours, and removing the bonded first and the second chamber from the organic solution; and mechanically separating the soaked first and the second chamber components.

摘要翻译： 本发明的实施例提供一种用于半导体处理室中使用的室分离方法。 在一个实施例中，用于在半导体处理室中使用的用于脱离室组件的方法包括提供第一室部件和第二室部件，第一室部件和第二室部件通过布置在第一和第二室部件之间的界面处的粘合剂材料粘合， 并将第二室分成有机溶液约8小时至约240小时，并从有机溶液中除去粘合的第一和第二室; 并机械地分离浸渍的第一和第二室组分。

公开(公告)号：US20130286530A1

公开(公告)日：2013-10-31

申请号：US13651967

申请日：2012-10-15

申请人： Xing Lin ,  Jennifer Y. Sun ,  Sumanth Banda

发明人： Xing Lin ,  Jennifer Y. Sun ,  Sumanth Banda

IPC分类号： H02N13/00 ,  B32B3/08 ,  B32B7/12

CPC分类号： B32B7/12 ,  B32B3/04 ,  B32B3/08 ,  H01L21/6833 ,  Y10T428/23 ,  Y10T428/239 ,  Y10T428/31504

摘要： Embodiments of the present invention provide chamber components having a protective element for shielding bonding material from processing environments in a processing environment. The protective element may include protective seals, protective structures, erosion resistive fillers, or combinations thereof. Embodiments of the present invention reduce erosion of bonding material used in a processing chamber, thus, improving processing quality and reducing maintenance costs.

摘要翻译： 本发明的实施例提供了具有用于在处理环境中将结合材料从处理环境中遮蔽的保护元件的腔室部件。 保护元件可以包括保护性密封件，保护结构，耐腐蚀性填料或其组合。 本发明的实施例减少了处理室中使用的接合材料的侵蚀，从而提高了加工质量并降低了维护成本。

公开(公告)号：US20180121557A1

公开(公告)日：2018-05-03

申请号：US15859257

申请日：2017-12-29

申请人： Mark A. Dinan ,  Jennifer Y. Sun ,  Ann M. Pickard ,  James M. Bower ,  Munir F. Bhatti ,  Joseph Vaughn Lewis Cook

发明人： Mark A. Dinan ,  Jennifer Y. Sun ,  Ann M. Pickard ,  James M. Bower ,  Munir F. Bhatti ,  Joseph Vaughn Lewis Cook

IPC分类号： G06F17/30 ,  H04L12/58

CPC分类号： G06F16/9535 ,  H04L51/046 ,  H04L51/12 ,  H04L51/32

摘要： A system and method of maintaining community safety standards within an Internet community. A balance is achieved between open communication and costly supervision of an immersive online community by use of automated algorithms, human supervision and peer monitoring. An automated filtering process is used in conjunction with an evaluation and penalty process. The filter is enhanced over time. A peer-to-peer control and peer-to-administrator reporting scheme complete the system and methods to synergistically maintain safety and set standards within the community.

公开(公告)号：US08871312B2

公开(公告)日：2014-10-28

申请号：US13573354

申请日：2012-09-10

申请人： Jennifer Y. Sun ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Senh Thach ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

发明人： Jennifer Y. Sun ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Senh Thach ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

IPC分类号： C04B35/505 ,  B32B18/00 ,  C04B35/50 ,  C04B35/486 ,  C04B35/495

CPC分类号： C04B35/505 ,  C04B35/486 ,  C04B35/495 ,  C04B35/50 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/404 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/81 ,  Y10T428/31

摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

摘要翻译： 在半导体加工条件下耐腐蚀/腐蚀等离子体腐蚀/腐蚀的特种陶瓷材料。 腐蚀性等离子体可以是含卤素等离子体。 特种陶瓷材料已经被修改以提供抑制等离子体电弧势的受控电阻率。

公开(公告)号：US08367227B2

公开(公告)日：2013-02-05

申请号：US11890156

申请日：2007-08-02

申请人： Jennifer Y. Sun ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Senh Thach ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

发明人： Jennifer Y. Sun ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Senh Thach ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

IPC分类号： B32B9/00 ,  B32B19/00 ,  B32B17/10 ,  B32B15/04 ,  C04B35/48 ,  C04B35/00 ,  C04B35/50 ,  C04B35/51

CPC分类号： C04B35/505 ,  C04B35/486 ,  C04B35/495 ,  C04B35/50 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/404 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/81 ,  Y10T428/31

摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

公开(公告)号：US08129029B2

公开(公告)日：2012-03-06

申请号：US12004907

申请日：2007-12-21

申请人： Jennifer Y. Sun ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves ,  Ren-Guan Duan ,  Senh Thach

发明人： Jennifer Y. Sun ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves ,  Ren-Guan Duan ,  Senh Thach

IPC分类号： B32B9/00

CPC分类号： C23C16/4404 ,  H01J37/32467 ,  H01J37/32477

摘要： An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.

摘要翻译： 描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。 该制品由金属或金属合金基材组成，其表面上具有金属或金属合金的氧化物的涂层。 氧化物涂层的结构本质上是柱状的。 构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大，并且其中氧化物涂层在氧化物之间的界面处被压缩 涂层和金属或金属合金基材。 通常，金属选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。

公开(公告)号：US08067067B2

公开(公告)日：2011-11-29

申请号：US10898113

申请日：2004-07-22

申请人： Jennifer Y. Sun ,  Senh Thach ,  Jim Dempster ,  Li Xu

发明人： Jennifer Y. Sun ,  Senh Thach ,  Jim Dempster ,  Li Xu

IPC分类号： C23C16/00 ,  C23C4/00 ,  C23C4/10 ,  C23C4/06 ,  C23C4/04 ,  C23C4/08 ,  C23C16/08 ,  C23F1/00 ,  H01L21/306 ,  B05D1/08 ,  B05D1/02 ,  B05D1/32 ,  B05D1/36 ,  H05H1/26 ,  H05H1/52

CPC分类号： C30B35/00 ,  C23C4/11 ,  C23C4/18 ,  C23C14/00 ,  C23C16/4404 ,  C23C28/042 ,  Y10S134/902 ,  Y10T428/26

摘要： Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.

摘要翻译： 本文公开了一种用于施加用于半导体处理装置的耐等离子体涂层的方法。 将涂层施加在通常包括2000系列或5000至7000系列的铝合金的基底上。 涂层通常包含Y，Sc，La，Ce，Eu，Dy等的氧化物或氟化物，或钇 - 铝 - 石榴石（YAG）。 涂层可以进一步包含约20体积％或更少的Al 2 O 3。 涂层通常使用选自热/火焰喷涂，等离子喷涂，溅射和化学气相沉积（CVD）的技术施加到铝合金基板或阳极氧化铝合金基板的表面上。 为了提供所需的耐腐蚀性，必须将涂层置于压缩状态。 这是通过在施加涂层期间控制沉积条件来实现的。

公开(公告)号：US20110036874A1

公开(公告)日：2011-02-17

申请号：US12925271

申请日：2010-10-18

申请人： Xikun Wang ,  Li Xu ,  Jennifer Y. Sun

发明人： Xikun Wang ,  Li Xu ,  Jennifer Y. Sun

IPC分类号： B05B1/14

CPC分类号： C23C16/45565 ,  C04B41/009 ,  C04B41/5353 ,  C04B41/91 ,  C23C16/4404 ,  C23C16/4407 ,  C30B35/00 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32862 ,  Y10T428/24273 ,  Y10T428/24314 ,  C04B35/505

摘要： Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

摘要翻译： 本文公开了一种用于处理室的气体分配组件中的气体分配板，其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。 气体分配板包括通常为月牙形的多个通孔。 通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。 固体含氧化钇的基材通常包含至少99.9％的氧化钇，并且具有至少4.92g / cm 3的密度，约0.02％或更低的吸水率，以及在约10μm的范围内的平均晶粒尺寸 至约25μm。 本文还公开了用于制造和清洁含氧化钇气体分配板的方法。

公开(公告)号：US07696117B2

公开(公告)日：2010-04-13

申请号：US11796211

申请日：2007-04-27

申请人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

发明人： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC分类号： C04B35/00

CPC分类号： C23C16/4404 ,  C04B35/111 ,  C04B35/505 ,  C04B41/009 ,  C04B41/5045 ,  C04B41/5346 ,  C04B41/87 ,  C04B41/91 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3244 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  H01J37/32467 ,  C04B41/4527 ,  C04B41/5031 ,  C04B41/5042 ,  C04B35/10 ,  C04B35/14 ,  C04B35/581

摘要： A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

摘要翻译： 一种耐半导体加工中含卤素等离子体侵蚀的陶瓷制品。 陶瓷制品包括多相陶瓷，通常包括两相至三相。 陶瓷由摩尔浓度范围为约50摩尔％至约75摩尔％的氧化钇形成; 摩尔浓度范围为约10摩尔％至约30摩尔％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为 约10摩尔％至约30摩尔％。