摘要:
There are provided an LED package using a Si substrate and a fabricating method of the LED package. In the LED package, a supporting structure includes a Si substrate and an insulating layer formed on top and bottom surfaces of the Si substrate, and the supporting structure defines at least one groove in a bottom surface by partially removing the Si substrate and the insulating layer. A plurality of upper electrodes is formed on a top surface of the supporting structure. At least one LED is mounted on the top surface of the supporting structure, and the LED includes both terminals electrically connected to the upper electrodes. A metal filler is filled in the groove defined in the bottom surface of the supporting structure.
摘要:
The present invention provides an LED package and the fabrication method thereof. The present invention provides an LED package including a submount silicon substrate and insulating film and electrode patterns formed on the submount silicon substrate. The LED package also includes a spacer having a through hole, formed on the electrode patterns. The LED package further includes an LED received in the through hole, flip-chip bonded to the electrode patterns, and an optical element attached to the upper surface of the spacer.
摘要:
An LED package having an MEMS switch operated by electrostatic force, capable of continuously protecting an LED from excessive current due to electrostatic discharge. The LED package includes a submount with first and second electrode patterns formed thereon; an LED mounted on the submount, having an n-electrode electrically connected to the first electrode pattern and a p-electrode electrically connected to the second electrode pattern; and an MEMS switch including a first conductive plate and a second conductive plate bent to have an area over and vertically apart from the first conductive plate, wherein the first and second conductive plates are electrically connected to the first and second electrode patterns, and the second conductive plate comes in contact with the first conductive plate by electrostatic force upon being applied with voltage higher than a predetermined level of voltage.
摘要:
The present invention provides a light emitting diode (LED) package and the fabrication method thereof. The LED package includes a lower metal layer, and a first silicon layer, a first insulation layer, a second silicon layer, a second insulation layer, and a package electrode pattern formed in their order on the lower metal layer. The LED package also includes a spacer having a cavity, formed on the electrode pattern. The LED package further includes an LED mounted in the cavity by flip-chip bonding to the electrode patterns, and an optical element attached to the upper surface of the spacer.
摘要:
The present invention provides an LED package and the fabrication method thereof. The present invention provides an LED package including a submount silicon substrate and insulating film and electrode patterns formed on the submount silicon substrate. The LED package also includes a spacer having a through hole, formed on the electrode patterns. The LED package further includes an LED received in the through hole, flip-chip bonded to the electrode patterns, and an optical element attached to the upper surface of the spacer.
摘要:
The present invention provides a light emitting diode (LED) package and the fabrication method thereof. The LED package includes a lower metal layer, and a first silicon layer, a first insulation layer, a second silicon layer, a second insulation layer, and a package electrode pattern formed in their order on the lower metal layer. The LED package also includes a spacer having a cavity, formed on the electrode pattern. The LED package further includes an LED mounted in the cavity by flip-chip bonding to the electrode patterns, and an optical element attached to the upper surface of the spacer.
摘要:
The present invention relates to an LED package including photo diode. The LED package includes a silicon substrate, and a photo diode is formed in an upper part thereof. Also, an insulation layer is formed on the silicon substrate excluding at least a light-receiving area of the photodiode. In the LED package, an LED terminal is formed on the insulation layer to be connected to the photo diode. First and second LED connecting pads are formed on the insulation layer, and arranged on both sides of the photo diode. In addition, an LED chip is mounted on the silicon substrate, and connected to the first and second LED connecting pads.
摘要:
Disclosed is a vanadium/titania-based catalyst including natural manganese ore for removing nitrogen oxides and dioxin in a wide operating temperature range and a method of using the same. Specifically, this invention pertains to a vanadium/titania (V/TiO2)-based catalyst including natural manganese ore for removing nitrogen oxides and dioxin in a wide operating temperature range, in which the WTiO2 catalyst for selective catalytic reduction of nitrogen oxides and removal of dioxin contained in flue gas includes 5-30 wt % of natural manganese ore, thus exhibiting excellent activity of removing nitrogen oxides even in the low temperature range and of removing dioxin at the same time, and to a method of using the same. The catalyst of this invention has good thermal stability and thus can simultaneously manifest nitrogen oxides removal performance and dioxin removal performance superior to conventional vanadium/titania catalysts in a wide temperature range (150˜450° C.) including not only a high temperature range but also a low temperature range. As well, since unreacted ammonia emissions can be reduced, the formation of an ammonium salt is prevented and ammonium nitrate is decomposed at low temperatures, thus solving the problems of inactivation of the catalyst due to catalytic poisoning and of a shortened lifetime thereof, leading to economic benefits.