LED package using Si substrate and fabricating method thereof
    1.
    发明授权
    LED package using Si substrate and fabricating method thereof 失效
    使用Si衬底的LED封装及其制造方法

    公开(公告)号:US07582496B2

    公开(公告)日:2009-09-01

    申请号:US11312412

    申请日:2005-12-21

    IPC分类号: H01L21/00 H01L33/00

    摘要: There are provided an LED package using a Si substrate and a fabricating method of the LED package. In the LED package, a supporting structure includes a Si substrate and an insulating layer formed on top and bottom surfaces of the Si substrate, and the supporting structure defines at least one groove in a bottom surface by partially removing the Si substrate and the insulating layer. A plurality of upper electrodes is formed on a top surface of the supporting structure. At least one LED is mounted on the top surface of the supporting structure, and the LED includes both terminals electrically connected to the upper electrodes. A metal filler is filled in the groove defined in the bottom surface of the supporting structure.

    摘要翻译: 提供了使用Si衬底的LED封装和LED封装的制造方法。 在LED封装中,支撑结构包括Si衬底和形成在Si衬底的顶表面和底表面上的绝缘层,并且支撑结构通过部分去除Si衬底和绝缘层而在底表面中限定至少一个凹槽 。 多个上电极形成在支撑结构的顶表面上。 至少一个LED安装在支撑结构的顶表面上,并且LED包括电连接到上电极的两个端子。 金属填料填充在支撑结构的底面中限定的槽中。

    Light emitting diode package including monitoring photodiode
    7.
    发明授权
    Light emitting diode package including monitoring photodiode 有权
    发光二极管封装包括监控光电二极管

    公开(公告)号:US07649208B2

    公开(公告)日:2010-01-19

    申请号:US11313508

    申请日:2005-12-21

    IPC分类号: H01L27/15

    摘要: The present invention relates to an LED package including photo diode. The LED package includes a silicon substrate, and a photo diode is formed in an upper part thereof. Also, an insulation layer is formed on the silicon substrate excluding at least a light-receiving area of the photodiode. In the LED package, an LED terminal is formed on the insulation layer to be connected to the photo diode. First and second LED connecting pads are formed on the insulation layer, and arranged on both sides of the photo diode. In addition, an LED chip is mounted on the silicon substrate, and connected to the first and second LED connecting pads.

    摘要翻译: 本发明涉及一种包括光电二极管的LED封装。 LED封装包括硅衬底,并且在其上部形成光电二极管。 而且,除了光电二极管的光接收面积以外,在硅基板上形成绝缘层。 在LED封装中,在绝缘层上形成LED端子以连接到光电二极管。 第一和第二LED连接焊盘形成在绝缘层上,并布置在光电二极管的两侧。 此外,LED芯片安装在硅衬底上,并连接到第一和第二LED连接焊盘。

    Vanadium/Titania Catalyst Comprising Natural Manganese Ore for Removing Nitrogen Oxides and Dioxin in Wide Operating Temperature Range and Method of Using the Same
    9.
    发明申请
    Vanadium/Titania Catalyst Comprising Natural Manganese Ore for Removing Nitrogen Oxides and Dioxin in Wide Operating Temperature Range and Method of Using the Same 审中-公开
    包含用于在宽工作温度范围内去除氮氧化物和二恶英的天然锰矿的钒/二氧化钛催化剂及其使用方法

    公开(公告)号:US20090142242A1

    公开(公告)日:2009-06-04

    申请号:US11992820

    申请日:2006-08-31

    摘要: Disclosed is a vanadium/titania-based catalyst including natural manganese ore for removing nitrogen oxides and dioxin in a wide operating temperature range and a method of using the same. Specifically, this invention pertains to a vanadium/titania (V/TiO2)-based catalyst including natural manganese ore for removing nitrogen oxides and dioxin in a wide operating temperature range, in which the WTiO2 catalyst for selective catalytic reduction of nitrogen oxides and removal of dioxin contained in flue gas includes 5-30 wt % of natural manganese ore, thus exhibiting excellent activity of removing nitrogen oxides even in the low temperature range and of removing dioxin at the same time, and to a method of using the same. The catalyst of this invention has good thermal stability and thus can simultaneously manifest nitrogen oxides removal performance and dioxin removal performance superior to conventional vanadium/titania catalysts in a wide temperature range (150˜450° C.) including not only a high temperature range but also a low temperature range. As well, since unreacted ammonia emissions can be reduced, the formation of an ammonium salt is prevented and ammonium nitrate is decomposed at low temperatures, thus solving the problems of inactivation of the catalyst due to catalytic poisoning and of a shortened lifetime thereof, leading to economic benefits.

    摘要翻译: 公开了一种钒/二氧化钛基催化剂,其包括在宽的工作温度范围内除去氮氧化物和二恶英的天然锰矿石及其使用方法。 具体地,本发明涉及一种钒/二氧化钛(V / TiO 2)基催化剂,其包括用于在宽的工作温度范围内除去氮氧化物和二恶英的天然锰矿,其中用于选择性催化还原氮氧化物的WTiO 2催化剂和除去 废气中含有的二恶英含有5〜30重量%的天然锰矿石,因此即使在低温范围内也能显示出优异的除氧效果,同时除去二恶英的方法及其使用方法。 本发明的催化剂具有良好的热稳定性,因此可以在宽温度范围(150〜450℃)内同时表现出优于常规钒/二氧化钛催化剂的氮氧化物去除性能和二恶英去除性能,不仅包括高温范围, 也是低温范围。 同样,由于可以减少未反应的氨的排放,可以防止铵盐的形成,并且在低温下分解硝酸铵,从而解决了催化中毒引起的催化剂失活和寿命缩短的问题,导致 经济效益