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    Method of forming a carbon nano-tube
    3.
    发明授权
    Method of forming a carbon nano-tube 有权
    形成碳纳米管的方法

    公开(公告)号：US08007875B2

    公开(公告)日：2011-08-30

    申请号：US11832601

    申请日：2007-08-01

    申请人： Hong-Sik Yoon ,  Young-Moon Choi ,  Sun-Woo Lee

    发明人： Hong-Sik Yoon ,  Young-Moon Choi ,  Sun-Woo Lee

    IPC分类号： H05H1/24

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  Y10S977/742

    摘要： In a method of forming carbon nano-tubes, a catalytic film is formed on a substrate. The catalytic film is then transformed into preliminary catalytic particles. Thereafter, the preliminary catalytic particles are transformed into catalytic particles. Carbon nano-tubes then grow from the catalytic particles. The carbon nano-tubes have relatively high conductivity and high number density.

    摘要翻译： 在形成碳纳米管的方法中，在基板上形成催化膜。 然后将催化膜转化成预催化颗粒。 此后，将预催化剂颗粒转化成催化剂颗粒。 碳纳米管然后从催化颗粒生长。 碳纳米管具有较高的导电性和高密度。

    Method of forming a wiring having carbon nanotube
    4.
    发明申请
    Method of forming a wiring having carbon nanotube 有权
    形成具有碳纳米管的布线的方法

    公开(公告)号：US20090271982A1

    公开(公告)日：2009-11-05

    申请号：US12387299

    申请日：2009-04-29

    申请人： Sun-Woo Lee ,  Seong-Ho Moon ,  Dong-Woo Kim ,  Jung-Hyeon Kim ,  Hong-Sik Yoon

    发明人： Sun-Woo Lee ,  Seong-Ho Moon ,  Dong-Woo Kim ,  Jung-Hyeon Kim ,  Hong-Sik Yoon

    IPC分类号： H05K3/10

    CPC分类号： H01L21/76879 ,  H01L21/76849 ,  H01L23/5252 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10T29/49117 ,  Y10T29/4913 ,  Y10T29/49155 ,  H01L2924/00

    摘要： In a method of forming a wiring having a carbon nanotube, a lower wiring is formed on a substrate, and a catalyst layer is formed on the lower wiring. An insulating interlayer is formed on the substrate to cover the catalyst layer, and an opening is formed through the insulating interlayer to expose an upper face of the catalyst layer. A carbon nanotube wiring is formed in the opening, and an upper wiring is formed on the carbon nanotube wiring and the insulating interlayer to be electrically connected to the carbon nanotube wiring. A thermal stress is generated between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring. A wiring having a reduced electrical resistance between the carbon nanotube wiring and the upper wiring may be obtained.

    摘要翻译： 在形成具有碳纳米管的布线的方法中，在基板上形成下布线，并且在下布线上形成催化剂层。 在衬底上形成绝缘中间层以覆盖催化剂层，并且通过绝缘中间层形成开口以暴露催化剂层的上表面。 在开口部形成有碳纳米管布线，在碳纳米管布线和绝缘中间层上形成上部配线，与碳纳米管配线电连接。 在碳纳米管布线和上布线之间产生热应力，以产生形成在碳纳米管布线表面上的天然氧化物层的电介质击穿。 可以获得碳纳米管布线和上布线之间的电阻降低的布线。

    METHODS OF FORMING CARBON NANOTUBES IN A WIRING PATTERN AND RELATED DEVICES
    6.
    发明申请
    METHODS OF FORMING CARBON NANOTUBES IN A WIRING PATTERN AND RELATED DEVICES 审中-公开
    在配线图案和相关设备中形成碳纳米管的方法

    公开(公告)号：US20070123019A1

    公开(公告)日：2007-05-31

    申请号：US11470369

    申请日：2006-09-06

    申请人： Seung-Hyun Lim ,  Sun-Woo Lee ,  In-Seok Yeo

    发明人： Seung-Hyun Lim ,  Sun-Woo Lee ,  In-Seok Yeo

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76802 ,  H01L21/76876 ,  H01L21/76879 ,  H01L2221/1094

    摘要： A method of forming a carbon nanotube includes forming a cavity between a substrate and a first layer on the substrate. The cavity extends in a wiring pattern and includes a metal catalyst pattern in the cavity. The carbon nanotube is formed from the metal catalyst pattern and extends inside the cavity along the wiring pattern. Related methods and devices are also discussed.

    摘要翻译： 形成碳纳米管的方法包括在基板和基板上的第一层之间形成空腔。 空腔以布线图案延伸，并且在空腔中包括金属催化剂图案。 碳纳米管由金属催化剂图案形成，并沿着布线图案在腔内延伸。 还讨论了相关的方法和设备。

    Vertical interconnection structure including carbon nanotubes and method of fabricating the same
    9.
    发明申请
    Vertical interconnection structure including carbon nanotubes and method of fabricating the same 审中-公开
    包括碳纳米管的垂直互连结构及其制造方法

    公开(公告)号：US20070096616A1

    公开(公告)日：2007-05-03

    申请号：US11544918

    申请日：2006-10-10

    申请人： In-Taek Han ,  Ha-Jin Kim ,  Sun-Woo Lee

    发明人： In-Taek Han ,  Ha-Jin Kim ,  Sun-Woo Lee

    IPC分类号： H01J1/02

    CPC分类号： H01L21/76879 ,  H01L21/76852 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided are a vertical interconnection structure including carbon nanotubes and a method of fabricating the same. The vertical interconnection structure includes a substrate; a lower electrode formed on the substrate; a catalyst layer formed on the lower electrode; an inactivated catalyst layer covering the lower electrode and having a first hole exposing the catalyst layer; an insulating layer which is formed on the inert catalyst layer and has a second hole connected to the first hole; a plurality of carbon nanotubes grown from an exposed area of the catalyst layer by the first hole; an upper electrode on the insulating layer being electrically connected to the carbon nanotubes, the inactivated catalyst layer is formed through a thermal reaction between the catalyst layer covering the lower electrode except for the catalyst layer in the first hole and a passivation layer having a third hole corresponding to the second hole.

    摘要翻译： 提供了包括碳纳米管的垂直互连结构及其制造方法。 垂直互连结构包括基板; 形成在所述基板上的下电极; 形成在下电极上的催化剂层; 钝化催化剂层，其覆盖所述下电极并具有暴露所述催化剂层的第一孔; 绝缘层，其形成在所述惰性催化剂层上并且具有连接到所述第一孔的第二孔; 由所述第一孔从所述催化剂层的暴露区域生长的多个碳纳米管; 绝缘层上的上电极与碳纳米管电连接，除了第一孔中的催化剂层之外的覆盖下电极的催化剂层和具有第三孔的钝化层之间的热反应形成失活的催化剂层 对应于第二个孔。

    METHODS OF MANUFACTURING A MEMORY DEVICE HAVING A CARBON NANOTUBE
    10.
    发明申请
    METHODS OF MANUFACTURING A MEMORY DEVICE HAVING A CARBON NANOTUBE 审中-公开
    制造具有碳纳米管的存储器件的方法

    公开(公告)号：US20120064692A1

    公开(公告)日：2012-03-15

    申请号：US13235079

    申请日：2011-09-16

    申请人： Seong-Ho MOON ,  Hong-Sik Yoon ,  Subramanya Mayya ,  Sun-Woo Lee ,  Dong-Woo Kim ,  Xiaofeng Wang

    发明人： Seong-Ho MOON ,  Hong-Sik Yoon ,  Subramanya Mayya ,  Sun-Woo Lee ,  Dong-Woo Kim ,  Xiaofeng Wang

    IPC分类号： H01L21/20 ,  B82Y40/00

    CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  H01L51/0048 ,  H01L51/057 ,  H01L51/0579

    摘要： A method of manufacturing a memory device having a carbon nanotube can be provided by forming a lower electrode on a substrate and forming an insulating interlayer on the lower electrode. An upper electrode including a diode can be formed on the insulating interlayer, where the upper electrode can have a first void exposing a sidewall of the diode and a portion of the insulating interlayer. A portion of the insulating interlayer can be partially removed to form an insulating interlayer pattern having a second void that exposes a portion of the lower electrode, where the second void can be connected with the first void. A carbon nanotube wiring can be formed from the lower electrode through the second and first voids, where the carbon nanotube wiring may be capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode.

    摘要翻译： 可以通过在基板上形成下电极并在下电极上形成绝缘中间层来提供制造具有碳纳米管的存储器件的方法。 可以在绝缘中间层上形成包括二极管的上电极，其中上电极可以具有暴露二极管的侧壁和绝缘中间层的一部分的第一空隙。 绝缘中间层的一部分可以被部分去除以形成具有暴露下部电极的一部分的第二空隙的绝缘层间图案，其中第二空隙可与第一空隙连接。 碳纳米管布线可以由下电极通过第二和第一空隙形成，其中碳纳米管布线可以通过施加到下电极的电压与上电极的二极管电连接。