Millimeter wave and far-infrared detector
    1.
    发明授权
    Millimeter wave and far-infrared detector 有权
    毫米波和远红外探测器

    公开(公告)号:US06627914B1

    公开(公告)日:2003-09-30

    申请号:US09763603

    申请日:2001-02-26

    IPC分类号: H01L2906

    摘要: An MR/FIR light detector is disclosed herein that has extraordinarily high degree of sensitivity and a high speed of response. The detector includes an MR/FIR light introducing section (1) for guiding an incident MR/FIR light (2), a semiconductor substrate (14) formed with a single-electron transistor (14) for controlling electric current passing through a semiconductor quantum dot (12) formed therein, and a BOTAI antenna (6, 6a, 6b, 6c) for concentrating the MW/FIR light (2) into a small special zone of sub-micron size occupied by the semiconductor quantum dot (12) in the single-electron transistor (14). The quantum dot (12) forming a two-dimensional electron system absorbs the electromagnetic wave concentrated efficiently, and retains an excitation state created therein for 10 nanoseconds or more, thus permitting electrons of as many as one millions in number or more to be transferred with respect to a single photon absorbed.

    摘要翻译: 本文公开了具有非常高的灵敏度和高响应速度的MR / FIR光检测器。 检测器包括用于引导入射MR / FIR光(2)的MR / FIR光导入部(1),形成有用于控制通过半导体量子的电流的单电子晶体管(14)的半导体衬底(14) 形成在其中的点(12)和用于将MW / FIR光(2)聚集成由半导体量子点(12)占据的亚微米尺寸的小特殊区域的BOTAI天线(6,6a,6b,6c) 单电子晶体管(14)。 形成二维电子系统的量子点(12)吸收有效集中的电磁波,并且将其中产生的激发态保持10纳秒以上,从而允许多达一百万数以上的电子与 尊重单个光子吸收。

    Power supply system and power supply system control method
    5.
    发明授权
    Power supply system and power supply system control method 有权
    电源系统和电源系统控制方法

    公开(公告)号:US07710067B2

    公开(公告)日:2010-05-04

    申请号:US11782080

    申请日:2007-07-24

    IPC分类号: H02P27/00

    摘要: A power accumulating unit of a power supply system includes a first switch section configured to achieve a first voltage output state in which an output voltage is substantially equal to a first motor driving voltage and a second switch section configured to achieve a second voltage output state in which the output voltage is substantially equal to a second motor driving voltage that is higher than the first motor driving voltage. A voltage switching control part is configured to perform a voltage switching control to switch between the first motor driving voltage and the second motor driving voltage by alternately operating the first and second switch sections to repeatedly switch between the first voltage output state and the second voltage output state.

    摘要翻译: 电源系统的蓄电单元包括:第一开关部,被配置为实现输出电压基本上等于第一电动机驱动电压的第一电压输出状态;以及第二开关部,被配置为实现第二电压输出状态 其输出电压基本上等于高于第一电动机驱动电压的第二电动机驱动电压。 电压切换控制部被配置为通过交替地操作第一和第二开关部分以在第一电压输出状态和第二电压输出之间重复切换来执行电压切换控制以在第一电动机驱动电压和第二电动机驱动电压之间切换 州。

    Infrared focusing device
    7.
    发明授权
    Infrared focusing device 有权
    红外聚焦装置

    公开(公告)号:US07391564B2

    公开(公告)日:2008-06-24

    申请号:US10519078

    申请日:2003-04-22

    IPC分类号: G02B13/14

    CPC分类号: G01Q60/22

    摘要: An infrared light condensing apparatus that focuses an infrared light of several tens microns in wavelength at a microfine area of submicron or less and also a near-field from a microfine area of submicron or less, and permits a scanning image to be obtained. It includes a solid immersion lens including a medium of high index of refraction for coupling an incident light or an outgoing light to an antenna, a measured specimen disposed on a base plane of the solid immersion lens, an antenna disposed away from the base plane at a distance ¼ of an effective wavelength of the light for causing the light to geometrically resonate therewith, a rod-like conductive probe having a sharply point end projecting from the antenna, and a position control means such as a triaxial XYZ mechanical stage for controlling the position of the probe with the intermediary of a cantilever.

    摘要翻译: 一种红外聚光装置,其聚焦在亚微米以下的微细亚微米以下的微细区域的波长为几十微米的红外光,也可以从亚微米以下的微细亚区域接近近场,可以获得扫描图像。 它包括固体浸没透镜,其包括用于将入射光或出射光耦合到天线的高折射率介质,设置在固体浸没透镜的基面上的测量样本,远离基面的天线 用于使光与其几何谐振的光的有效波长的距离¼,具有从天线突出的尖锐点的棒状导电探针,以及诸如三轴XYZ机械台的位置控制装置,用于控制 探头与悬臂中间位置。

    Infrared light detector
    8.
    发明授权
    Infrared light detector 有权
    红外光检测器

    公开(公告)号:US08304731B2

    公开(公告)日:2012-11-06

    申请号:US12527614

    申请日:2008-02-01

    IPC分类号: H01L31/00

    摘要: An infrared light detector with an infrared light sensitivity thereof further improved. According to the infrared light detector, an isolated region of a first electronic layer is switched between a “disconnected status” and a “connected status”. Under the connected status, saturation of an electrostatic charge quantity of the isolated region in the disconnected status is eliminated, and consequently, saturation of a variation amount of an electrical conductivity of a second electronic layer is eliminated. Therefore, the infrared light sensitivity is further improved by time integration of the variation amount of the electrical conductivity of the second electronic layer.

    摘要翻译: 具有红外光敏感性的红外光检测器进一步提高。 根据红外光检测器,第一电子层的隔离区域在断开状态和连接状态之间切换。 在连接状态下,消除了断开状态下的隔离区域的静电电荷量的饱和,从而消除了第二电子层的电导率的变化量的饱和。 因此,通过第二电子层的电导率的变化量的时间积分,进一步提高红外光的灵敏度。

    Bolometer-type THz-wave detector
    10.
    发明授权
    Bolometer-type THz-wave detector 有权
    测辐射计型太赫兹波检测器

    公开(公告)号:US07741604B2

    公开(公告)日:2010-06-22

    申请号:US12056569

    申请日:2008-03-27

    IPC分类号: G01J5/00

    摘要: In a micro-bridge structure in which a temperature detecting portion 14 (diaphragm) including a bolometer thin film 7 is supported by a supporting portion 13 in a state floated from a circuit substrate 2, a reflective film 3 reflecting a THz wave is formed on the circuit substrate 2, an absorbing film 11 absorbing the THz wave is formed on the temperature detecting portion 14, and an optical resonance structure is formed by the reflective film 3 and the temperature detecting portion 14. And a gap between the reflective film 3 and the temperature detecting portion 14 is set approximately ¼ of a wavelength of an infrared ray on the basis of the wavelength of the infrared ray (in a range of approximately 1.5 to 2.5 μm, for example), and a sheet resistance of the temperature detecting portion 14 is set in a range in which an absorptance of the THz wave becomes a predetermined value or above on the basis of the THz wave (in a range of approximately 10 to 100 Ω/sq.). By this arrangement, the absorptance of the THz wave is drastically improved while using the structure and manufacturing technique of a bolometer-type infrared detector.

    摘要翻译: 在从电路基板2浮起的状态下,由支撑部13支撑包括测辐射热计薄膜7的温度检测部14(隔膜)的微桥结构中,形成反射太赫兹波的反射膜3, 电路基板2,吸收THz波的吸收膜11形成在温度检测部分14上,并且由反射膜3和温度检测部分14形成光学共振结构。反射膜3和 基于红外线的波长(例如约1.5〜2.5μm的范围),将温度检测部14设定为红外线的波长的近似1/4,并且温度检测部14的薄层电阻 14设定在THz波的吸收率基于THz波(约10〜100Ω·平方)的范围内成为规定值以上的范围。 通过这种布置,在使用测辐射热计型红外探测器的结构和制造技术的同时,太赫兹波的吸收率得到显着提高。