公开(公告)号：US5110729A

公开(公告)日：1992-05-05

申请号：US641795

申请日：1991-01-16

申请人： Susumu Maeda ,  Mitsuru Furusawa ,  Yasumasa Marumoto ,  Tadashi Horiuchi ,  Yoshinari Sato ,  Yoshiyuki Saeki

发明人： Susumu Maeda ,  Mitsuru Furusawa ,  Yasumasa Marumoto ,  Tadashi Horiuchi ,  Yoshinari Sato ,  Yoshiyuki Saeki

IPC分类号： C12N15/09 ,  C07K14/01 ,  C07K14/56 ,  C07K14/65 ,  C12N7/00 ,  C12N7/02 ,  C12N7/04 ,  C12N15/00 ,  C12N15/62 ,  C12N15/866 ,  C12P21/00 ,  C12P21/02 ,  C12R1/91

CPC分类号： C12N15/86 ,  C07K14/005 ,  C07K14/56 ,  C07K14/65 ,  C07K2319/00 ,  C07K2319/09 ,  C07K2319/735 ,  C07K2319/75 ,  C12N2710/14122 ,  C12N2710/14143

摘要： Recombinant Bombyx mori nuclear polyhedrosis viruses having, in the polyhedral protein-encoding structural gene portion of the Bombyx mori nuclear polyhedrosis virus DNA (BmNPV DNA), a structural gene for a desired protein as joined to the whole of or a part of the polyhedral protein-encoding structural gene with or without interposition of a linker base sequence are provided.By propagating the above viruses in silkworm-derived cells or silkworms, fused proteins of a desired protein and the whole of or a part of the polyhedral protein as joined together with or without interposition of a linking amino acid or peptide are produced. The desired proteins can be obtained from the fused proteins by cleavage or decomposition at the linking site.

摘要翻译： 在家蚕核型多角体病毒DNA（BmNPV DNA）的多面体蛋白质编码结构基因部分中具有与多面体蛋白质全部或部分连接的所需蛋白质的结构基因的重组家蚕核型多角体病毒 提供了具有或没有插入连接体碱基序列的编码结构基因。 通过在蚕衍生的细胞或家蚕中繁殖上述病毒，产生所需蛋白质的融合蛋白质和多面体蛋白质的全部或部分结合在一起或不插入连接氨基酸或肽。 可以通过在连接位点的切割或分解从融合的蛋白质获得所需的蛋白质。

公开(公告)号：US5118616A

公开(公告)日：1992-06-02

申请号：US684486

申请日：1991-04-12

申请人： Susumu Maeda ,  Mitsuru Furusawa

发明人： Susumu Maeda ,  Mitsuru Furusawa

IPC分类号： C12N15/09 ,  C07K14/56 ,  C12N1/21 ,  C12N15/866 ,  C12P21/00 ,  C12R1/91

CPC分类号： C12N15/86 ,  C07K14/56 ,  C12N2710/14143

摘要： A method of producing useful substances which comprising propagating in cultured cells or in a host a recombinant Bombyx mori nuclear polydegrosis virus (BmNPV) DNA is disclosed. The BmNPV DNA is produced by recombination with a double-stranded DNA containing (i) a 5'-upstream BmNPV DNA fragment orginally occurring upstream from the structural gene coding for the production of polyhedral protein and also including the promoter region for the structural gene, (ii) a translational start codon and (iii) a gene coding for the production of a useful substance exogenous to the virus, with or without (iv) a 3'-downstream BmNPV DNA fragment originally occurring downstream from the structural gene coding for the production of polyhedral protein.

摘要翻译： 公开了一种生产有用物质的方法，其包括在培养的细胞中或在宿主中繁殖重组家蚕核多角体病毒（BmNPV）DNA。 通过与包含（i）编码多面体蛋白的生成的结构基因的上游最初发生的5'上游的BmNPV DNA片段并且还包括结构基因的启动子区域的双链DNA重组产生BmNPV DNA， （ii）翻译起始密码子和（iii）编码用于产生外源于病毒的有用物质的基因，具有或不具有（iv）最初在编码所述病毒的结构基因下游发生的3'-下游BmNPV DNA片段 生产多面体蛋白。

公开(公告)号：US08999864B2

公开(公告)日：2015-04-07

申请号：US13322080

申请日：2010-05-28

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

IPC分类号： H01L21/26 ,  H01L21/00 ,  H01L21/322

CPC分类号： H01L21/3225 ,  Y10S438/928

摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

摘要翻译： 提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。 并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。 硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁 氧化膜去除空隙缺陷。 通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

公开(公告)号：US20140346914A1

公开(公告)日：2014-11-27

申请号：US14372226

申请日：2012-04-19

申请人： Yoichi Funasaki ,  Kiyonori Koga ,  Susumu Maeda

发明人： Yoichi Funasaki ,  Kiyonori Koga ,  Susumu Maeda

IPC分类号： H02K3/28

CPC分类号： H02K3/28

摘要： In a three-phase, four-pole, four-parallel-circuit stator winding of an electrical rotating machine, each of two sets of U-phase output terminals U1, U2 is formed of two sets of parallel circuits each formed of windings having a same pitch (one is formed of first and second winding circuits 1, 2 and the other is formed of third and fourth winding circuits 3, 4). The winding of each winding circuit is formed of two serially-connected coil phase bands (coil phase bands a and b form the first winding circuit 1 and coil phase bands c and d, coil phase bands e and f, and coil phase bands g and h form the second, third, and fourth winding circuits 2, 3, 4, respectively). A voltage vector phase difference and a voltage difference between the winding circuits can be eliminated without providing a jumper wire to winding end portions.

摘要翻译： 在旋转电机的三相四极并联电路定子绕组中，两组U相输出端子U1，U2中的每一组由两组并联电路组成，每组由具有 相同的间距（一个由第一和第二绕组电路1,2形成，另一个由第三和第四绕组电路3,4组成）。 每个绕组电路的绕组由两个串联的线圈相位带（线圈相位带a和b形成第一绕组电路1和线圈相位带c和d，线圈相位​​带e和f以及线圈相位带g和 h分别形成第二，第三和第四绕组电路2,3,4）。 可以消除绕组电路之间的电压矢量相位差和电压差，而不向绕组端部提供跨接线。

公开(公告)号：US20140034194A1

公开(公告)日：2014-02-06

申请号：US13982594

申请日：2012-01-26

申请人： Hideki Imataka ,  Masato Yuya ,  Yuya Gyotoku ,  Atsushi Kobayashi ,  Susumu Maeda

发明人： Hideki Imataka ,  Masato Yuya ,  Yuya Gyotoku ,  Atsushi Kobayashi ,  Susumu Maeda

IPC分类号： C22C38/50 ,  C22C38/46 ,  C22C38/44 ,  C22C38/28 ,  C22C38/00 ,  C22C38/22 ,  C22C38/20 ,  C22C38/06 ,  C22C38/04 ,  C22C38/02 ,  C23C8/26 ,  C22C38/24

CPC分类号： C22C38/50 ,  C21D1/06 ,  C21D9/32 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/20 ,  C22C38/22 ,  C22C38/24 ,  C22C38/28 ,  C22C38/44 ,  C22C38/46 ,  C23C8/26

摘要： A steel for nitriding having a chemical composition consisting of, by mass percent, C: 0.07-0.14%, Si: 0.10-0.30%, Mn: 0.4-1.0%, S: 0.005-0.030%, Cr: 1.0-1.5%, Mo: ≦0.05% (including 0%), Al: 0.010% or more to less than 0.10%, V: 0.10-0.25%, optionally at least one element selected from Cu: ≦0.30% and Ni: ≦0.25% [0.61Mn+1.11Cr+0.35Mo+0.47≦2.30], and the balance of Fe and impurities. P, N, Ti and O among the impurities are P: ≦0.030%, N: ≦0.008%, Ti: ≦0.005%, and O: ≦0.0030%. The steel is easily subjected to cutting before nitriding and suitable for use as an automobile ring gear. The nitrided component having a surface hardness of 650-900 HV, core hardness being ≧150 HV, and effective case depth of ≧0.15 mm has excellent bending fatigue strength and surface fatigue strength although the content of Mo is as low as ≦0.05% and has a small amount of expansion caused by nitriding.

摘要翻译： 按质量％计含有C：0.07-0.14％，Si：0.10-0.30％，Mn：0.4-1.0％，S：0.005-0.030％，Cr：1.0-1.5％的化学组成的氮化氮钢， Mo：≤0.05％（包括0％），Al：0.010％以上至小于0.10％，V：0.10-0.25％，任选至少一种选自Cu：0.30％和Ni：0.25％的元素[0.61 Mn +1.11Cr+0.35Mo+0.47@2.30]，余量为Fe和杂质。 杂质中的P，N，Ti和O分别为P：@ 0.030％，N：0.008％，Ti：0.005％，O：0.0030％。 钢在氮化之前易于切割，适用于汽车齿圈。 表面硬度为650-900HV，芯硬度> 150HV，有效壳深度≥0.15mm的氮化组分具有优异的弯曲疲劳强度和表面疲劳强度，尽管Mo的含量低至≤0.05 ％，渗氮少量膨胀。

公开(公告)号：US08252700B2

公开(公告)日：2012-08-28

申请号：US12656232

申请日：2010-01-21

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C30B33/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67109

摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

摘要翻译： 在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理， 在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒， 因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

公开(公告)号：US20100055884A1

公开(公告)日：2010-03-04

申请号：US12512229

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B33/02 ,  H01L21/3225

摘要： In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

摘要翻译： 在硅晶片的制造方法中，在硅晶片上进行第一热处理工艺，同时引入具有0.01体积％的氧气的第一气体。 ％以上1.00体积％ ％以下和稀有气体，并且在停止引入第一气体并引入具有20体积％的氧气的第二气体的同时进行第二热处理工艺。 ％以上100体积％ ％以下，稀有气体。 在第一热处理工艺中，将硅晶片以第一加热速率快速加热到1300℃或更高的第一温度和硅的熔点或更低，并保持在第一温度。 在第二热处理工艺中，将硅晶片保持在第一温度，并以第一冷却速度从第一温度快速冷却。

公开(公告)号：US07235128B2

公开(公告)日：2007-06-26

申请号：US11005180

申请日：2004-12-06

申请人： Susumu Maeda ,  Hiroshi Inagaki ,  Shigeki Kawashima ,  Shoei Kurosaka ,  Kozo Nakamura

发明人： Susumu Maeda ,  Hiroshi Inagaki ,  Shigeki Kawashima ,  Shoei Kurosaka ,  Kozo Nakamura

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/20 ,  C30B15/22 ,  C30B15/36 ,  Y10S117/90 ,  Y10T117/1004

摘要： A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).

摘要翻译： 一种单晶半导体的制造方法及其装置。 可以使用不具有任何显着变化的现有设备来提升大直径和大重量的单晶半导体，同时不影响单晶半导体的氧浓度和熔体的温度，同时不会过度地提高温度 晶种。 特别地，预设晶种（14）的允许温差（DeltaT）和直径（D）之间的关系（L 1，L 2，L 3），使得晶种（14）在 籽晶（14）浸入熔体中的时间和熔体（5）落入未被引入到晶种（14）中的位错的允许温度差（DeltaT）之内。 根据关系（L 1，L 2，L 3），确定与浸入熔体中的晶种（14）的直径（D）相对应的容许温度差（DeltaT）。 进行温度控制，使晶种（14）浸入熔融物（5）中时晶种（14）和熔体（5）之间的温度差落在确定的允许温差（DeltaT）之内。

公开(公告)号：US06810668B2

公开(公告)日：2004-11-02

申请号：US10398478

申请日：2003-09-17

申请人： Shuji Nagatani ,  Susumu Maeda

发明人： Shuji Nagatani ,  Susumu Maeda

IPC分类号： F02G300

CPC分类号： F01K23/101 ,  F01K23/065

摘要： In order to control an actual temperature of a vapor generated by en evaporator (3) for heating water by an exhaust gas from an engine (1) to a target vapor temperature by varying the amount of water supplied from a supplied-water amount control injector (7), a control unit (11) controls the amount of water supplied in a feedforward manner in accordance to an engine rotational speed and an intake negative pressure and controls the amount of water supplied in a feedback manner based on a difference between the actual vapor temperature and the target vapor temperature. It is possible to control the actual temperature of the vapor generated by the evaporator (3) to the target vapor temperature with a high accuracy even in a transient state of the engine (1) by correcting a feedforward control value using at least one of a fuel-cut control signal, an ignition-retarding control signal, an EGR control signal and an air fuel ratio control signal which are parameters indicating a burned state of the engine (1).

公开(公告)号：US6102008A

公开(公告)日：2000-08-15

申请号：US21168

申请日：1998-02-10

申请人： Susumu Maeda ,  Kazuya Yokayama

发明人： Susumu Maeda ,  Kazuya Yokayama

IPC分类号： F02D41/20 ,  F02D41/22 ,  F02D45/00 ,  F02M51/06 ,  F02M61/16 ,  F02M65/00 ,  F02M51/00

CPC分类号： F02M51/0671 ,  F02D41/20 ,  F02M61/165

摘要： The fuel injection valve controller steadily detects the completion of opening of the fuel injection valve or the completion of the needle valve lifting movement. A current flowing through the electromagnetic coil 4 which drives the fuel infection valve, is measured based on the voltage difference V across the resistor R6 connected in series with the coil 4. The circuit 21 emphasizes changes in the coil current. The signal V2 representative of emphasized coil current is supplied to the current change detecting circuit 22 which generates the output signal V3 when the coil current or voltage signal V2 temporarily decreases. The signal V3 is compared with the reference voltage Vref to issue the signal S3 showing the full opening of the fuel injection valve.

摘要翻译： 燃料喷射阀控制器稳定地检测燃料喷射阀的打开完成或针阀提升运动的完成。 基于与线圈4串联连接的电阻器R6的电压差V 2来测量流过驱动燃料感应阀的电磁线圈4的电流。电路21强调线圈电流的变化。 表示强调线圈电流的信号V2被提供给电流变化检测电路22，当线圈电流或电压信号V2暂时降低时，该电流变化检测电路产生输出信号V3。 将信号V3与参考电压Vref进行比较，以发出示出燃料喷射阀全开的信号S3。