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    METHODS FOR FORMING ROUGHENED SURFACES AND APPLICATIONS THEREOF
    2.
    发明申请
    METHODS FOR FORMING ROUGHENED SURFACES AND APPLICATIONS THEREOF 有权
    形成粗糙表面的方法及其应用

    公开(公告)号：US20110256722A1

    公开(公告)日：2011-10-20

    申请号：US13084254

    申请日：2011-04-11

    申请人： Hannu Huotari ,  Suvi Haukka

    发明人： Hannu Huotari ,  Suvi Haukka

    IPC分类号： H01L21/306

    CPC分类号： H01L21/32051 ,  H01L27/10852 ,  H01L28/84 ,  Y10S977/742 ,  Y10S977/773

    摘要： Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.

    摘要翻译： 提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。 在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。 可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。 粗糙化的金属表面可以用于例如集成电路的制造。

    Methods for Forming Roughened Surfaces and Applications thereof
    3.
    发明申请
    Methods for Forming Roughened Surfaces and Applications thereof 有权
    形成粗糙面的方法及其应用

    公开(公告)号：US20090246931A1

    公开(公告)日：2009-10-01

    申请号：US12368845

    申请日：2009-02-10

    申请人： Hannu Huotari ,  Suvi Haukka

    发明人： Hannu Huotari ,  Suvi Haukka

    IPC分类号： H01L21/02 ,  B05D5/12

    CPC分类号： H01L21/32051 ,  H01L27/10852 ,  H01L28/84 ,  Y10S977/742 ,  Y10S977/773

    摘要： Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.

    摘要翻译： 提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。 在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。 可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。 粗糙化的金属表面可以用于例如集成电路的制造。

    Methods for forming roughened surfaces and applications thereof
    5.
    发明申请
    Methods for forming roughened surfaces and applications thereof 有权
    形成粗糙表面的方法及其应用

    公开(公告)号：US20070254488A1

    公开(公告)日：2007-11-01

    申请号：US11414510

    申请日：2006-04-28

    申请人： Hannu Huotari ,  Suvi Haukka

    发明人： Hannu Huotari ,  Suvi Haukka

    IPC分类号： H01L21/302

    CPC分类号： H01L21/32051 ,  H01L27/10852 ,  H01L28/84 ,  Y10S977/742 ,  Y10S977/773

    摘要： Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.

    摘要翻译： 提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。 在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。 可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。 粗糙化的金属表面可以用于例如集成电路的制造。

    Method of forming an electrode with adjusted work function
    6.
    发明授权
    Method of forming an electrode with adjusted work function 有权
    形成具有调节功函数的电极的方法

    公开(公告)号：US07045406B2

    公开(公告)日：2006-05-16

    申请号：US10430703

    申请日：2003-05-05

    申请人： Hannu Huotari ,  Suvi Haukka ,  Marko Tuominen

    发明人： Hannu Huotari ,  Suvi Haukka ,  Marko Tuominen

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28194 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517

    摘要： A method forms a gate stack for a semiconductor device with a desired work function of the gate electrode. The work function is adjusted by changing the overall electronegativity of the gate electrode material in the region that determines the work function of the gate electrode during the gate electrode deposition. The gate stack is deposited by an atomic layer deposition type process and the overall electronegativity of the gate electrode is tuned by introducing at least one pulse of an additional precursor to selected deposition cycles of the gate electrode. The tuning of the work function of the gate electrode can be done not only by introducing additional material into the gate electrode, but also by utilizing the effects of a graded mode deposition and thickness variations of the lower gate part of the gate electrode in combination with the effects that the incorporation of the additional material pulses offers.

    摘要翻译： 一种方法形成具有期望的栅电极功函数的半导体器件的栅堆叠。 通过在栅电极沉积期间改变确定栅电极的功函数的区域中的栅极电极材料的总体电负性来调整功函数。 通过原子层沉积型工艺沉积栅极堆叠，并通过向选择的栅电极的沉积循环引入附加前体的至少一个脉冲来调节栅电极的整体电负性。 栅电极的功函数的调谐不仅可以通过向栅电极引入额外的材料，还可以通过利用栅电极的下栅极部分的分级模式淀积和厚度变化的结果与 附加材料脉冲的结合提供的效果。

    Method of depositing barrier layer for metal gates
    7.
    发明授权
    Method of depositing barrier layer for metal gates 有权
    金属栅极沉积阻挡层的方法

    公开(公告)号：US06858524B2

    公开(公告)日：2005-02-22

    申请号：US10430811

    申请日：2003-05-05

    申请人： Suvi Haukka ,  Hannu Huotari

    发明人： Suvi Haukka ,  Hannu Huotari

    IPC分类号： H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/28185 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28238 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method enables the use of hydrogen plasma, high energy hydrogen radicals and ions, other reactive radicals, reactive oxygen and oxygen containing precursors in the processing steps subsequent to the deposition of the gate dielectric layer of the device. The ALD process for forming the barrier layer is performed essentially in the absence of plasma and reactive hydrogen radials and ions. This invention makes it possible to use oxygen as a precursor in the deposition of the metal gates. The barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode. Furthermore, the barrier film prevents the electrode material from reacting with the gate dielectric material. The barrier layer is ultra thin and, at the same time, it forms a uniform cover over the entire surface of the gate dielectric.

    摘要翻译： 制造高性能MOS器件和晶体管栅极堆叠的方法包括在半导体衬底上形成栅极电介质层; 通过ALD型工艺在所述栅极介质层上形成阻挡层; 以及在阻挡层上形成栅电极层。 该方法能够在沉积器件的栅极电介质层之后的处理步骤中使用氢等离子体，高能氢自由基和离子，其它反应性基团，活性氧和含氧前体。 用于形成阻挡层的ALD工艺基本上在不存在等离子体和反应性氢的径向和离子的情况下进行。 本发明使得可以在金属栅极的沉积中使用氧作为前体。 阻挡膜还允许在栅电极的沉积中使用直接或远程等离子体形式的氢等离子体。 此外，阻挡膜防止电极材料与栅极电介质材料反应。 阻挡层是超薄的，并且同时在栅电介质的整个表面上形成均匀的覆盖层。

    Method of depositing barrier layer from metal gates
    9.
    发明申请
    Method of depositing barrier layer from metal gates 审中-公开
    从金属栅极沉积阻挡层的方法

    公开(公告)号：US20050104112A1

    公开(公告)日：2005-05-19

    申请号：US10954806

    申请日：2004-09-29

    申请人： Suvi Haukka ,  Hannu Huotari

    发明人： Suvi Haukka ,  Hannu Huotari

    IPC分类号： H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L27/108

    CPC分类号： H01L21/28185 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28238 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method enables the use of hydrogen plasma, high energy hydrogen radicals and ions, other reactive radicals, reactive oxygen and oxygen containing precursors in the processing steps subsequent to the deposition of the gate dielectric layer of the device. The ALD process for forming the barrier layer is performed essentially in the absence of plasma and reactive hydrogen radials and ions. This invention makes it possible to use oxygen as a precursor in the deposition of the metal gates. The barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode. Furthermore, the barrier film prevents the electrode material from reacting with the gate dielectric material. The barrier layer is ultra thin and, at the same time, it forms a uniform cover over the entire surface of the gate dielectric.

    摘要翻译： 制造高性能MOS器件和晶体管栅极堆叠的方法包括在半导体衬底上形成栅极电介质层; 通过ALD型工艺在所述栅极介质层上形成阻挡层; 以及在阻挡层上形成栅电极层。 该方法能够在沉积器件的栅极电介质层之后的处理步骤中使用氢等离子体，高能氢自由基和离子，其它反应性基团，活性氧和含氧前体。 用于形成阻挡层的ALD工艺基本上在不存在等离子体和反应性氢的径向和离子的情况下进行。 本发明使得可以在金属栅极的沉积中使用氧作为前体。 阻挡膜还允许在栅电极的沉积中使用直接或远程等离子体形式的氢等离子体。 此外，阻挡膜防止电极材料与栅极电介质材料反应。 阻挡层是超薄的，并且同时在栅电介质的整个表面上形成均匀的覆盖层。

    Methods for forming roughened surfaces and applications thereof
    10.
    发明授权
    Methods for forming roughened surfaces and applications thereof 有权
    形成粗糙表面的方法及其应用

    公开(公告)号：US08252703B2

    公开(公告)日：2012-08-28

    申请号：US13084254

    申请日：2011-04-11

    申请人： Hannu Huotari ,  Suvi Haukka

    发明人： Hannu Huotari ,  Suvi Haukka

    IPC分类号： H01L21/469

    CPC分类号： H01L21/32051 ,  H01L27/10852 ,  H01L28/84 ,  Y10S977/742 ,  Y10S977/773

    摘要： Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.

    摘要翻译： 提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。 在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。 可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。 粗糙化的金属表面可以用于例如集成电路的制造。