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公开(公告)号：US20220416058A1
公开(公告)日：2022-12-29
申请号：US17359105
申请日：2021-06-25
发明人： Jen-Hong Chang , Yi-Hsiu Liu , You-Ting Lin , Chih-Chung Chang , Kuo-Yi Chao , Jiun-Ming Kuo , Yuan-Ching Peng , Sung-En Lin , Chia-Cheng Chao , Chung-Ting Ko
IPC分类号： H01L29/66 , H01L21/8234 , H01L29/78 , H01L29/06
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US09847296B2
公开(公告)日：2017-12-19
申请号：US14181493
申请日：2014-02-14
发明人： Chih-Chung Chang , Jung-Chih Tsao , Chun Che Lin , Yu-Ming Huang , Tain-Shang Chang , Jian-Shin Tsai
IPC分类号： H01L21/44 , H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L23/53223 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a multilayer barrier comprises forming a conductive line over a substrate, depositing a dielectric layer over the conductive line, forming a plug opening in the dielectric layer, forming a multilayer barrier through a plurality of deposition processes and corresponding plasma treatment processes.
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公开(公告)号：US11532733B1
公开(公告)日：2022-12-20
申请号：US17359105
申请日：2021-06-25
发明人： Jen-Hong Chang , Yi-Hsiu Liu , You-Ting Lin , Chih-Chung Chang , Kuo-Yi Chao , Jiun-Ming Kuo , Yuan-Ching Peng , Sung-En Lin , Chia-Cheng Chao , Chung-Ting Ko
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/66 , H01L21/8234 , H01L29/06 , H01L29/78
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US20230029739A1
公开(公告)日：2023-02-02
申请号：US17389142
申请日：2021-07-29
发明人： Chih-Chung Chang , Sung-En Lin , Chung-Ting Ko , You-Ting Lin , Yi-Hsiu Liu , Po-Wei Liang , Jiun-Ming Kuo , Yung-Cheng Lu , Chi On Chui , Yuan-Ching Peng , Jen-Hong Chang
IPC分类号： H01L29/423 , H01L29/786 , H01L29/06 , H01L27/088 , H01L21/8234
摘要： A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.
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公开(公告)号：US20240194767A1
公开(公告)日：2024-06-13
申请号：US18426010
申请日：2024-01-29
发明人： Jen-Hong Chang , Yuan-Ching Peng , Chung-Ting Ko , Kuo-Yi Chao , Chia-Cheng Chao , You-Ting Lin , Chih-Chung Chang , Yi-Hsiu Liu , Jiun-Ming Kuo , Sung-En Lin
IPC分类号： H01L29/66 , H01L21/8234 , H01L29/06 , H01L29/78
CPC分类号： H01L29/66795 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/7851
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US11923250B2
公开(公告)日：2024-03-05
申请号：US17875466
申请日：2022-07-28
发明人： Hung-Ju Chou , Chih-Chung Chang , Jiun-Ming Kuo , Che-Yuan Hsu , Pei-Ling Gao , Chen-Hsuan Liao
IPC分类号： H01L21/8238 , H01L21/02 , H01L21/3065 , H01L27/092 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/161
CPC分类号： H01L21/823807 , H01L21/02532 , H01L21/02609 , H01L21/3065 , H01L21/823821 , H01L21/823878 , H01L21/823892 , H01L27/0924 , H01L27/0928 , H01L29/045 , H01L29/0653 , H01L29/1054 , H01L29/1083 , H01L29/161
摘要： The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
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公开(公告)号：US11888049B2
公开(公告)日：2024-01-30
申请号：US18077714
申请日：2022-12-08
发明人： Jen-Hong Chang , Yuan-Ching Peng , Chung-Ting Ko , Kuo-Yi Chao , Chia-Cheng Chao , You-Ting Lin , Chih-Chung Chang , Yi-Hsiu Liu , Jiun-Ming Kuo , Sung-En Lin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/66 , H01L21/8234 , H01L29/06 , H01L29/78
CPC分类号： H01L29/66795 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/7851
摘要： Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.
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公开(公告)号：US20230062305A1
公开(公告)日：2023-03-02
申请号：US17460488
申请日：2021-08-30
发明人： Jen-Hong Chang , Yuan-Ching Peng , Jiun-Ming Kuo , Kuo-Yi Chao , Chih-Chung Chang , You-Ting LIN , Yen-Po Lin , Chen-Hsuan Liao
IPC分类号： H01L21/033 , H01L29/66 , H01L21/8234 , H01L29/423
摘要： A method includes forming a semiconductor substrate, forming hard mask layers (HMs) over the semiconductor substrate, forming first mandrels over the HMs, forming second mandrels along sidewalls of the first mandrels, forming a protective layer over the first mandrels and the second mandrels, removing a portion of the protective layer to expose portions of the first and the second mandrels, removing the exposed portions of the second mandrels with respect to the exposed portions of the first mandrels, removing remaining portions of the protective layer to expose remaining portions of the first and second mandrels, where the exposed portions of the first mandrels and the remaining portions of the first and second mandrels form a mandrel structure, patterning the HMs using the mandrel structure as an etching mask, and patterning the semiconductor substrate to form a fin structure using the patterned HMs as an etching mask.
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公开(公告)号：US20170341201A1
公开(公告)日：2017-11-30
申请号：US15165902
申请日：2016-05-26
发明人： Chun-Wei Hsu , Chi-Jen Liu , Liang-Guang Chen , Chih-Chung Chang , Cheng-Chun Chang , Hsin-Kai Chen , Yi-Sheng Lin , Shi-Ya Hsu , Tsung-Ju Lin , Yi-Sheng Ma
摘要： An embodiment retainer ring includes an outer ring encircling an opening and an inner ring attached to the outer ring. The inner ring is disposed between the opening and the outer ring. The inner ring includes a softer material than the outer ring and a plurality of voids within the softer material.
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公开(公告)号：US20150235954A1
公开(公告)日：2015-08-20
申请号：US14181493
申请日：2014-02-14
发明人： Chih-Chung Chang , Jung-Chih Tsao , Chun Che , Yu-Ming Huang , Tain-Shang Chang , Jian-Shin Tsai
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L23/53223 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a multilayer barrier comprises forming a conductive line over a substrate, depositing a dielectric layer over the conductive line, forming a plug opening in the dielectric layer, forming a multilayer barrier through a plurality of deposition processes and corresponding plasma treatment processes.
摘要翻译： 一种用于形成多层屏障的方法包括在衬底上形成导电线，在导电线上沉积电介质层，在电介质层中形成插塞开口，通过多个沉积工艺和相应的等离子体处理工艺形成多层势垒。
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