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公开(公告)号：US10510601B2
公开(公告)日：2019-12-17
申请号：US16114932
申请日：2018-08-28
Inventor： Ling-Fu Nieh , Chun-Wei Hsu , Pinlei Edmund Chu , Chi-Jen Liu , Liang-Guang Chen , Yi-Sheng Lin
IPC: H01L21/768 , H01L29/78 , H01L21/321 , H01L21/8238 , H01L23/485 , H01L29/08 , C09G1/02
Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.
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公开(公告)号：US20190096761A1
公开(公告)日：2019-03-28
申请号：US16114932
申请日：2018-08-28
Inventor： Ling-Fu Nieh , Chun-Wei Hsu , Pinlei Edmund Chu , Chi-Jen Liu , Liang-Guang Chen , Yi-Sheng Lin
IPC: H01L21/768 , H01L29/78 , H01L21/321 , H01L21/8238 , H01L23/485 , H01L29/08
Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.
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公开(公告)号：US10961487B2
公开(公告)日：2021-03-30
申请号：US16152965
申请日：2018-10-05
Inventor： Pinlei Edmund Chu , Chun-Wei Hsu , Ling-Fu Nieh , Chi-Jen Liu , Liang-Guang Chen , Yi-Sheng Lin
IPC: H01L21/02 , H01L21/302 , B08B1/00 , C11D11/00 , C11D7/26 , H01L21/321
Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.
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公开(公告)号：US10937691B2
公开(公告)日：2021-03-02
申请号：US16559336
申请日：2019-09-03
Inventor： Chia Hsuan Lee , Chun-Wei Hsu , Chia-Wei Ho , Chi-Hsiang Shen , Li-Chieh Wu , Jian-Ci Lin , Chi-Jen Liu , Yi-Sheng Lin , Yang-Chun Cheng , Liang-Guang Chen , Kuo-Hsiu Wei , Kei-Wei Chen
IPC: H01L21/02 , H01L21/768 , H01L21/3105 , C09G1/02
Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.
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公开(公告)号：US20200090997A1
公开(公告)日：2020-03-19
申请号：US16686682
申请日：2019-11-18
Inventor： Ling-Fu Nieh , Chun-Wei Hsu , Pinlei Edmund Chu , Chi-Jen Liu , Liang-Guang Chen , Yi-Sheng Lin
IPC: H01L21/768 , H01L21/02 , H01L29/78 , H01L29/417 , H01L21/321 , H01L21/8238 , H01L23/485 , H01L29/08 , C09G1/02
Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.
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Patent Agency Ranking
公开(公告)号：US20190103308A1
公开(公告)日：2019-04-04
申请号：US15939894
申请日：2018-03-29
Inventor： Chun-Wei Hsu , Ling-Fu Nieh , Pinlei Edmund Chu , Chi-Jen Liu , Yi-Sheng Lin , Ting-Hsun Chang , Chia-Wei Ho , Liang-Guang Chen
IPC: H01L21/768 , H01L23/522 , H01L23/532
Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the method includes forming a dielectric layer over a substrate and patterning the dielectric layer to form a first recess. The method may also include depositing a first layer in the first recess and depositing a second layer over the first layer, the second layer being different than the first layer. The method may also include performing a first chemical mechanical polish (CMP) process on the second layer using a first oxidizer and performing a second CMP process on remaining portions of the second layer and the first layer using the first oxidizer. The method may also include forming a first conductive element over the remaining portions of the first layer after the second CMP polish is performed.
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公开(公告)号：US20170341201A1
公开(公告)日：2017-11-30
申请号：US15165902
申请日：2016-05-26
Inventor： Chun-Wei Hsu , Chi-Jen Liu , Liang-Guang Chen , Chih-Chung Chang , Cheng-Chun Chang , Hsin-Kai Chen , Yi-Sheng Lin , Shi-Ya Hsu , Tsung-Ju Lin , Yi-Sheng Ma
Abstract: An embodiment retainer ring includes an outer ring encircling an opening and an inner ring attached to the outer ring. The inner ring is disposed between the opening and the outer ring. The inner ring includes a softer material than the outer ring and a plurality of voids within the softer material.
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公开(公告)号：US11121028B2
公开(公告)日：2021-09-14
申请号：US16570325
申请日：2019-09-13
Inventor： Chun-Wei Hsu , Ling-Fu Nieh , Pinlei Edmund Chu , Chi-Jen Liu , Yi-Sheng Lin , Ting-Hsun Chang , Chia-Wei Ho , Liang-Guang Chen
IPC: H01L21/768 , H01L23/532 , H01L23/522
Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.
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公开(公告)号：US20200006125A1
公开(公告)日：2020-01-02
申请号：US16570325
申请日：2019-09-13
Inventor： Chun-Wei Hsu , Ling-Fu Nieh , Pinlei Edmund Chu , Chi-Jen Liu , Yi-Sheng Lin , Ting-Hsun Chang , Chia-Wei Ho , Liang-Guang Chen
IPC: H01L21/768 , H01L23/532 , H01L23/522
Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.
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公开(公告)号：US12131944B2
公开(公告)日：2024-10-29
申请号：US17460929
申请日：2021-08-30
Inventor： Chun-Wei Hsu , Chih-Chieh Chang , Yi-Sheng Lin , Jian-Ci Lin , Jeng-Chi Lin , Ting-Hsun Chang , Liang-Guang Chen , Ji Cui , Kei-Wei Chen , Chi-Jen Liu
IPC: H01L21/768 , C09G1/02 , H01L23/522
CPC classification number: H01L21/7684 , C09G1/02 , H01L21/76877 , H01L23/5226
Abstract: A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.
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