公开(公告)号：US20170218535A1

公开(公告)日：2017-08-03

申请号：US15329304

申请日：2015-08-06

Applicant: TDK CORPORATION

Inventor： Kazuhito YAMASAWA ,  Atsushi OHIDO ,  Katsumi KAWASAKI

IPC: C30B29/40 ,  H01L21/02 ,  C30B1/10 ,  C30B1/02 ,  C30B29/20 ,  C30B29/38

CPC classification number: C30B29/403 ,  C30B1/02 ,  C30B1/10 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/38 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/02658

Abstract: An alumina substrate having a carbon-containing phase with an AlN layer formed on a surface of the alumina substrate.

公开(公告)号：US20220158029A1

公开(公告)日：2022-05-19

申请号：US17434693

申请日：2020-02-27

Applicant: TDK Corporation

Inventor： Atsushi OHIDO ,  Kazuhito YAMASAWA

IPC: H01L33/16 ,  H01L33/32

Abstract: A substrate 10 contains a first layer L1 and a second layer L2 that are stacked on one another, the first layer L1 contains crystalline AlN and an additive element, the second layer L2 contains crystalline α-alumina, the additive element is at least one selected from the group consisting of rare earth elements, alkaline earth elements, and alkali metal elements, the thickness of the first layer L1 is 5 to 600 nm, RC(002) is a rocking curve of diffracted X-rays originating from a (002) plane of AlN, RC(002) is measured by an ω-scan of the surface SL1 of the first layer L1, the half width of RC(002) is 0° to 0.4°, RC(100) is a rocking curve of diffracted X-rays originating from a (100) plane of AlN, RC(100) is measured by a ϕ-scan of the surface SL1 of the first layer L1, and the half width of RC(100) is 0° to 0.8°.

公开(公告)号：US20170211204A1

公开(公告)日：2017-07-27

申请号：US15329478

申请日：2015-08-06

Applicant: TDK CORPORATION

Inventor： Kazuhito YAMASAWA ,  Atsushi OHIDO ,  Katsumi KAWASAKI

IPC: C30B29/40 ,  C30B1/02 ,  C30B19/02 ,  H01L21/02 ,  C30B19/08 ,  C30B9/12 ,  C30B29/20 ,  C30B1/10 ,  C30B19/12

CPC classification number: C30B29/403 ,  C30B1/02 ,  C30B1/10 ,  C30B5/02 ,  C30B9/12 ,  C30B19/02 ,  C30B19/08 ,  C30B19/12 ,  C30B25/02 ,  C30B29/20 ,  H01L21/0242 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02628 ,  H01L21/205

Abstract: An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate.

公开(公告)号：US20200283928A1

公开(公告)日：2020-09-10

申请号：US16644719

申请日：2018-08-21

Applicant: TDK Corporation

Inventor： Atsushi OHIDO ,  Kazuhito YAMASAWA ,  Katsumi KAWASAKI

IPC: C30B29/68 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  C30B29/20 ,  C30B29/40

Abstract: A substrate 10 comprises: a first layer L1 containing crystalline aluminum nitride; a second layer L2 containing crystalline α-alumina; and an intermediate layer Lm sandwiched between the first layer L1 and the second layer L2 and containing aluminum, nitrogen, and oxygen, and the content of nitrogen in the intermediate layer Lm decreases in a direction Z from the first layer L1 toward the second layer L2, and the content of oxygen in the intermediate layer Lm increases in the direction Z from the first layer L1 toward the second layer L2.

公开(公告)号：US20180038011A1

公开(公告)日：2018-02-08

申请号：US15554109

申请日：2016-03-02

Applicant: TDK CORPORATION

Inventor： Kazuhito YAMASAWA ,  Atsushi OHIDO ,  Katsumi KAWASAKI

IPC: C30B25/20 ,  C30B29/40

Abstract: An alumina substrate on which an AlN layer is formed and that causes less warping, and a substrate material strong enough to withstand normal handling when an AlN crystal is grown upon it, and prevents cracking and fracturing of a grown crystal when stress is applied during growing or cooling. The substrate has a gap and a rare earth element-containing region inside the AlN layer or at the interface between the AlN layer and the alumina substrate. Warping of the AlN layer can be reduced by lattice-mismatch stress being concentrated at the region and releasing of stress by the gap. The region having a concentrating of stress, and the gap having a low mechanical strength, can induce crackings and fracturings. As a result, contamination of crackings and fracturings into the crystal grown on the substrate can be prevented. The region can ensure a level of mechanical strength sufficient for handling.