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公开(公告)号：US10297497B2
公开(公告)日：2019-05-21
申请号：US15658039
申请日：2017-07-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Sebastian Meier , Helmut Rinck , Kai-Alexander Schachtschneider , Fromund Metz , Mario Schmidpeter , Javier Gustavo Moreira
IPC: H01L21/285 , H01L21/311 , H01L21/768 , H01L21/3213
Abstract: In accordance with at least one embodiment of the disclosure, a method of patterning platinum on a substrate is disclosed. In an embodiment, an adhesive layer is deposited over the substrate, a sacrificial layer is deposited over the adhesive layer, and a patterned photoresist layer is formed over the sacrificial layer. Then, the sacrificial layer is patterned utilizing the photoresist layer as a mask such that at least a portion of the adhesive layer is exposed. Subsequently, the top and sidewall surfaces of the patterned sacrificial layer and the first portion of the adhesive layer are covered by a platinum layer. Finally, the sacrificial layer and a portion of the platinum layer covering the top and sidewall surfaces of the sacrificial layer are etched, thereby leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate.
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公开(公告)号：US12080454B2
公开(公告)日：2024-09-03
申请号：US17535872
申请日：2021-11-26
Applicant: Texas Instruments Incorporated
Inventor： Gernot Manfred Bauer , Kai-Alexander Schachtschneider
Abstract: An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).
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公开(公告)号：US20230170111A1
公开(公告)日：2023-06-01
申请号：US17535872
申请日：2021-11-26
Applicant: Texas Instruments Incorporated
Inventor： Gernot Manfred Bauer , Kai-Alexander Schachtschneider
Abstract: An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).
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公开(公告)号：US09960135B2
公开(公告)日：2018-05-01
申请号：US14665799
申请日：2015-03-23
Applicant: Texas Instruments Incorporated
Inventor： Helmut Rinck , Gernot Bauer , Robert Zrile , Kai-Alexander Schachtschneider , Michael Otte , Harald Wiesner
IPC: H01L21/28 , H01L23/00 , H01L23/522 , H01L23/532
CPC classification number: H01L24/13 , H01L23/5226 , H01L23/53204 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/94 , H01L2224/0345 , H01L2224/03612 , H01L2224/03614 , H01L2224/03622 , H01L2224/03828 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05157 , H01L2224/05558 , H01L2224/05657 , H01L2224/11005 , H01L2224/11334 , H01L2224/11849 , H01L2224/13 , H01L2224/13014 , H01L2224/13016 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/94 , H01L2924/01022 , H01L2924/01029 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/2064 , H01L2924/00014 , H01L2224/03 , H01L2924/01078 , H01L2924/00012 , H01L2924/01047 , H01L2924/01082 , H01L2924/01051
Abstract: A method of forming bond pads includes providing a substrate including an integrated circuit (IC) device formed thereon having an oxidizable uppermost metal interconnect layer which provides a plurality of bond pads that are coupled to circuit nodes on the IC device. The plurality of bond pads includes a metal bond pad area. A cobalt including connection layer is deposited directly on the metal bond pad area. The cobalt including connection layer is patterned to provide a cobalt bond pad surface for the plurality of bond pads, and a solder material is formed on the cobalt bond pad surface.
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