公开(公告)号：US09040326B2

公开(公告)日：2015-05-26

申请号：US14456768

申请日：2014-08-11

Applicant: The Regents of the University of California

Inventor： Hong Zhong ,  Anurag Tyagi ,  Kenneth J. Vampola ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L21/02 ,  H01L33/00 ,  H01L33/10 ,  H01L33/20 ,  H01L33/18

CPC classification number: H01L33/22 ,  H01L21/02433 ,  H01L21/02458 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0083

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract translation: III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光 萃取。 纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

公开(公告)号：US20140346542A1

公开(公告)日：2014-11-27

申请号：US14456768

申请日：2014-08-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Hong Zhong ,  Anurag Tyagi ,  Kenneth J. Vampola ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/22 ,  H01L21/02433 ,  H01L21/02458 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0083

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract translation: III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光 萃取。 纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

公开(公告)号：US20140191244A1

公开(公告)日：2014-07-10

申请号：US14205947

申请日：2014-03-12

Applicant: The Regents of the University of California

Inventor： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/265 ,  H01L29/20 ,  H01L21/02

CPC classification number: H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract translation: （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。