Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method

    公开(公告)号:US10069033B2

    公开(公告)日:2018-09-04

    申请号:US15109845

    申请日:2015-01-15

    Abstract: There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom.

    INTEGRATION OF EPITAXIAL LIFT-OFF SOLAR CELLS WITH MINI-PARABOLIC CONCENTRATOR ARRAYS VIA PRINTING METHOD
    6.
    发明申请
    INTEGRATION OF EPITAXIAL LIFT-OFF SOLAR CELLS WITH MINI-PARABOLIC CONCENTRATOR ARRAYS VIA PRINTING METHOD 审中-公开
    通过印刷方法将外延起飞的太阳能电池与微型聚光器阵列集成

    公开(公告)号:US20160329457A1

    公开(公告)日:2016-11-10

    申请号:US15109845

    申请日:2015-01-15

    Abstract: There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom.

    Abstract translation: 公开了一种制备光伏器件的方法。 特别地,该方法包括通过印刷方法将外延剥离太阳能电池与微型抛物面聚光器阵列集成。 因此,公开了一种包括提供生长衬底的方法; 在生长衬底上沉积至少一个保护层; 在保护层上沉积至少一个牺牲层; 在所述牺牲层上沉积至少一个光活性单元; 蚀刻从至少一个光活性单元延伸到牺牲层的至少两个平行沟槽的图案; 在所述至少一个光活性电池上沉积金属; 将所述金属键合到主体衬底; 以及用一个或多个蚀刻步骤去除牺牲层。 主体衬底可以是硅氧烷,其在卷绕时可以形成用于将太阳能电池集成到聚光器阵列中的印模。 还公开了一种制备生长衬底和由其制成的生长衬底的方法。

    Organic optoelectronic device
    7.
    发明授权

    公开(公告)号:US11716864B2

    公开(公告)日:2023-08-01

    申请号:US16920555

    申请日:2020-07-03

    Abstract: An organic optoelectronic device comprises a substrate having first and second regions, a first electrode positioned over the first region of the substrate, a shutter electrode positioned over the second region of the substrate, an organic heterojunction layer comprising an organic heterojunction material, positioned over at least a portion of the first electrode, an insulator layer positioned over at least a portion of the shutter electrode, an organic channel layer, comprising an organic channel material, positioned over at least a portion of the heterojunction and insulator layers, and a second electrode positioned over the channel layer in the second region of the substrate, wherein the shutter electrode is configured to generate a repulsive potential barrier in the channel layer, suitable to at least reduce movement of charge in the channel layer. A method of measuring received light in an optoelectronic device is also described.

    NON-DESTRUCTIVE WAFER RECYCLING FOR EPITAXIAL LIFT-OFF THIN-FILM DEVICE USING A SUPERLATTICE EPITAXIAL LAYER
    10.
    发明申请
    NON-DESTRUCTIVE WAFER RECYCLING FOR EPITAXIAL LIFT-OFF THIN-FILM DEVICE USING A SUPERLATTICE EPITAXIAL LAYER 审中-公开
    使用超级外延层的外延提升薄膜设备的非破坏性水平回收

    公开(公告)号:US20160351747A1

    公开(公告)日:2016-12-01

    申请号:US15111218

    申请日:2015-01-15

    Abstract: The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer.

    Abstract translation: 本公开涉及使用外延剥离(ELO)制造薄膜电子和光电子器件(例如柔性光伏器件)的方法和生长结构。 特别地,本文公开了晶片保护方案,其在ELO期间保持晶片表面的完整性并且增加晶片可用于再生长的次数。 晶片保护方案使用包括至少一个超晶格层的生长结构。

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