公开(公告)号：US20230420225A1

公开(公告)日：2023-12-28

申请号：US18368028

申请日：2023-09-14

申请人： Tokyo Electron Limited

发明人： Tejung HUANG ,  Shuhei OGAWA ,  Cedric THOMAS

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32082 ,  H01J2237/334

摘要： A substrate processing method in a substrate processing apparatus includes (a) supplying a process gas that contains a gas containing halogen other than fluorine and a gas containing oxygen, to a processing container in which a stage is disposed, the stage being configured to place thereon a workpiece having an etching target film, (b) performing plasma processing on the workpiece by first plasma generated from the process gas under first plasma generation conditions, (c) performing plasma processing on the workpiece by second plasma generated from the process gas under second plasma generation conditions in which a condition of radio-frequency power and a processing time are different from those in the first plasma generation conditions, and other conditions are the same, and (d) repeating (b) and (c).

公开(公告)号：US20190189493A1

公开(公告)日：2019-06-20

申请号：US16322863

申请日：2017-08-01

申请人： TOKYO ELECTRON LIMITED

发明人： Shuhei OGAWA ,  Keigo TOYODA ,  Yoshihide KIHARA

IPC分类号： H01L21/683 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/6833 ,  H01J37/32715 ,  H01J2237/20214 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/3213 ,  H01L21/67069 ,  H01L21/768 ,  H05H1/46

摘要： A method according to an embodiment includes: (a) a first step of etching a workpiece held by a holding structure in a state in which a first direction and a second direction are maintained to form a first angle, by a plasma generated in a processing container; and (a) a second step of, after execution of the first step, etching the workpiece held by the holding structure in a state in which the first direction and the second direction are maintained to form a second angle, by the plasma generated in the processing container.