METHOD FOR CLOSING FLUID PASSAGE, AND WATER HAMMERLESS VALVE DEVICE AND WATER HAMMERLESS CLOSING DEVICE USED IN THE METHOD
    5.
    发明申请
    METHOD FOR CLOSING FLUID PASSAGE, AND WATER HAMMERLESS VALVE DEVICE AND WATER HAMMERLESS CLOSING DEVICE USED IN THE METHOD 有权
    用于封闭流体通道的方法,以及无水阀装置和方法中使用的无水封闭装置

    公开(公告)号:US20070068577A1

    公开(公告)日:2007-03-29

    申请号:US11425028

    申请日:2006-06-19

    摘要: A fluid passage is emergently-closed in a short time without causing a water hammer by an extremely simple device and operation. A water hammerless closing device includes an actuator operated valve provided in a fluid passage, an electro-pneumatic conversion device for supplying a 2-step actuator operating pressure Pa to an actuator operated-type valve, a vibration sensor removably secured to the pipe passage on the upstream side of the actuator operated-type valve, and a tuning box receiving a vibration detection signal Pr from the vibration sensor and delivering a control signal Sc to the electro-pneumatic conversion device for controlling the step operating pressure Ps′ of the 2-step actuator operating pressure Pa so that, with the control signal Sc being regulated, the electro-pneumatic conversion device outputs the 2-step actuator operating pressure Pa with the step operating pressure Ps′ capable of bringing the vibration detection signal Pr substantially to zero.

    摘要翻译: 流体通道在短时间内紧密关闭,而不会通过非常简单的装置和操作造成水锤。 无水锤关闭装置包括设置在流体通道中的致动器操作阀,用于向致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置,可拆卸地固定到管道上的振动传感器 执行器操作型阀的上游侧和从振动传感器接收振动检测信号Pr的调谐箱,并将控制信号Sc传送到电动气动转换装置,以控制2- 步进致动器操作压力Pa,使得在控制信号Sc被调节的情况下,电动气动转换装置将能够使振动检测信号Pr基本上为零的步进操作压力Ps'输出2步致动器操作压力Pa。

    METHOD FOR CLOSING FLUID PASSAGE, AND WATER HAMMERLESS VALVE DEVICE AND WATER HAMMERLESS CLOSING DEVICE USED IN THE METHOD
    6.
    发明申请
    METHOD FOR CLOSING FLUID PASSAGE, AND WATER HAMMERLESS VALVE DEVICE AND WATER HAMMERLESS CLOSING DEVICE USED IN THE METHOD 有权
    用于封闭流体通道的方法,以及无水阀装置和方法中使用的无水封闭装置

    公开(公告)号:US20080035877A1

    公开(公告)日:2008-02-14

    申请号:US11762987

    申请日:2007-06-14

    IPC分类号: F16K27/00

    摘要: A fluid passage is emergently-closed in a short time without causing a water hammer by an extremely simple device and operation. A water hammerless closing device includes an actuator operated valve provided in a fluid passage, an electro-pneumatic conversion device for supplying a 2-step actuator operating pressure Pa to an actuator operated-type valve, a vibration sensor removably secured to the pipe passage on the upstream side of the actuator operated-type valve, and a tuning box receiving a vibration detection signal Pr from the vibration sensor and delivering a control signal Sc to the electro-pneumatic conversion device for controlling the step operating pressure Ps′ of the 2-step actuator operating pressure Pa so that, with the control signal Sc being regulated, the electro-pneumatic conversion device outputs the 2-step actuator operating pressure Pa with the step operating pressure Ps′ capable of bringing the vibration detection signal Pr substantially to zero.

    摘要翻译: 流体通道在短时间内紧密关闭,而不会通过非常简单的装置和操作造成水锤。 无水锤关闭装置包括设置在流体通道中的致动器操作阀,用于向致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置,可拆卸地固定到管道上的振动传感器 执行器操作型阀的上游侧和从振动传感器接收振动检测信号Pr的调谐箱,并将控制信号Sc传送到电动气动转换装置,以控制2- 步进致动器操作压力Pa,使得在控制信号Sc被调节的情况下,电动气动转换装置将能够使振动检测信号Pr基本上为零的步进操作压力Ps'输出2步致动器操作压力Pa。

    REDUCED PRESSURE DEPOSITION APPARATUS AND REDUCED PRESSURE DEPOSITION METHOD
    8.
    发明申请
    REDUCED PRESSURE DEPOSITION APPARATUS AND REDUCED PRESSURE DEPOSITION METHOD 审中-公开
    降低压力沉积装置和降低压力沉积方法

    公开(公告)号:US20120308714A1

    公开(公告)日:2012-12-06

    申请号:US13490753

    申请日:2012-06-07

    IPC分类号: C23C16/44 H05B33/10

    摘要: In a deposited thin film for use in a semiconductor device or the like, adsorption of contaminants is a problem. In the case in which a gas pressure in a chamber is maintained in a viscous flow region, the adsorption of the organic substances is significantly decreased as compared with the case in which the gas pressure is maintained in a molecular flow region. The gas pressure is controlled so that it can be set in the molecular flow region when forming the deposited thin film, and set in the viscous flow region when such deposition is not being performed. Thus, the deposited thin film is formed with less contamination from the organic substances.

    摘要翻译: 在用于半导体器件等的沉积薄膜中,污染物的吸附是一个问题。 在室内的气体压力保持在粘性流动区域的情况下,与在分子流动区域中保持气体压力的情况相比,有机物质的吸附显着降低。 控制气体压力,使得当形成沉积的薄膜时,可以将其设置在分子流动区域中,并且当不进行这种沉积时将其设定在粘性流动区域中。 因此,沉积的薄膜形成有机物质的污染较少。

    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
    9.
    发明申请
    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
    等离子体处理方法和等离子体处理装置

    公开(公告)号:US20120234491A1

    公开(公告)日:2012-09-20

    申请号:US13469851

    申请日:2012-05-11

    IPC分类号: B05B1/18 C23C16/511 C23C16/50

    摘要: A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.

    摘要翻译: 一种等离子体处理装置,其中尽可能地抑制昂贵的氪气和氙气的消耗,同时减少等离子体处理期间对工件的损坏。 在使用稀有气体的基板的等离子体处理中,使用两种以上的不同种类的稀有气体,廉价的氩气用作一种稀有气体,氪气和氙气气体中的任何一种或两者具有较大的碰撞横截面 作为其他气体,使用与氩气相比的电子区域。 因此,尽可能地抑制昂贵的氪气和氙气的消耗,并且在等离子体处理期间减少了工件上的损坏。

    MIS TRANSISTOR AND CMOS TRANSISTOR
    10.
    发明申请
    MIS TRANSISTOR AND CMOS TRANSISTOR 有权
    MIS晶体管和CMOS晶体管

    公开(公告)号:US20100038722A1

    公开(公告)日:2010-02-18

    申请号:US12604015

    申请日:2009-10-22

    IPC分类号: H01L27/092

    摘要: A MIS transistor, formed on a semiconductor substrate, assumed to comprise a semiconductor substrate (702, 910) comprising a projecting part (704, 910B) with at least two different crystal planes on the surface on a principal plane, a gate insulator (708, 920B) for covering at least a part of each of said at least two different crystal planes constituting the surface of the projecting part, a gate electrode (706, 930B), comprised on each of said at least two different crystal planes constituting the surface of the projecting part, which sandwiches the gate insulator with the said at least two different planes, and a single conductivity type diffusion region (710a, 710b, 910c, 910d) formed in the projecting part facing each of said at least two different crystal planes and individually formed on both sides of the gate electrode. Such a configuration allows control over increase in the element area and increase of channel width.

    摘要翻译: 形成在半导体衬底上的MIS晶体管被假设为包括半导体衬底(702,910),该半导体衬底包括在主平面上的表面上具有至少两个不同晶面的突出部分(704,910B),栅极绝缘体(708 ,920B),用于覆盖构成所述突出部分的表面的所述至少两个不同晶面的每一个的至少一部分;栅电极(706,930B),包括在构成所述表面的所述至少两个不同晶面中的每一个上 所述突出部分与所述至少两个不同平面夹住所述栅极绝缘体,以及形成在所述突出部分中的所述至少两个不同晶面中的每一个的单导电型扩散区域(710a,710b,910c,910d) 并分别形成在栅电极的两侧。 这种配置允许控制元件面积的增加和通道宽度的增加。