公开(公告)号：US06952075B2

公开(公告)日：2005-10-04

申请号：US10810637

申请日：2004-03-29

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Zhang Li

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Zhang Li

IPC分类号： H01J1/30 ,  H01J61/067 ,  H01J61/16 ,  H01J1/05 ,  H01J1/14

CPC分类号： H01J61/0677

摘要： A cold cathode discharge device with high efficiency of light emission and long life is prepared by a cold cathode having both high secondary electron emission and anti-spattering property.Using carbon system cold cathodes constituted of a mixed phase of diamond and graphite, a cold cathode discharge device with high efficiency of light emission and long life is realized. It is desirable that an element having a wavelength of light emission equal to or shorter than 200 nanometers should be mixed in the discharge gas.

摘要翻译： 具有高发光效率和长寿命的冷阴极放电装置由具有高二次电子发射和抗溅射性能的冷阴极制备。 使用由金刚石和石墨的混合相构成的碳系冷阴极，实现了高发光效率和长寿命的冷阴极放电装置。 期望在放电气体中混合具有等于或小于200纳米的发光波长的元件。

公开(公告)号：US06781294B2

公开(公告)日：2004-08-24

申请号：US10098571

申请日：2002-03-18

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Zhang Li

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Zhang Li

IPC分类号： H01J105

CPC分类号： H01J61/0677

摘要： A cold cathode discharge device with high efficiency of light emission and long life is prepared by a cold cathode having both high secondary electron emission and anti-spattering property. Using carbon system cold cathodes constituted of a mixed phase of diamond and graphite, a cold cathode discharge device with high efficiency of light emission and long life is realized. It is desirable that an element having a wavelength of light emission equal to or shorter than 200 nanometers should be mixed in the discharge gas.

摘要翻译： 具有高发光效率和长寿命的冷阴极放电器件通过具有高二次电子发射和抗溅射性能的冷阴极制备。使用由金刚石和石墨的混合相构成的碳系冷阴极，冷阴极 实现了高效率的发光和长寿命的放电装置。 期望在放电气体中混合具有等于或小于200纳米的发光波长的元件。

公开(公告)号：US07642542B2

公开(公告)日：2010-01-05

申请号：US11531577

申请日：2006-09-13

申请人： Mariko Suzuki ,  Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida

发明人： Mariko Suzuki ,  Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/24

CPC分类号： H01L33/02 ,  H01L33/24 ,  H01L33/44 ,  H01L33/58

摘要： A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.

摘要翻译： 一种半导体发光器件包括：第一半导体层; 发光层设置在所述第一半导体层上; 设置在发光层上的第二半导体层和连接到第一半导体层和第二半导体层的金属电极。 发光层的折射率低于第一半导体层。 第二半导体层的折射率低于发光层。 金属电极向发光层提供电流。

公开(公告)号：US07528535B2

公开(公告)日：2009-05-05

申请号：US11075883

申请日：2005-03-10

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

IPC分类号： H01J1/62

CPC分类号： H01J1/32 ,  H01J9/247 ,  H01J65/046

摘要： A cold cathode discharge lamp includes: a transparent hollow housing; a fluorescent film formed on inner surfaces of the hollow housing; a pair of cold cathodes that are located in the hollow housing; and a discharge gas that contains hydrogen gas sealed within the hollow housing. Each of the cold cathodes includes: a supporting body that has conductivity; an insulating diamond film formed on the supporting body; and an insulating layer that insulates the supporting body from the insulating diamond film.

摘要翻译： 冷阴极放电灯包括：透明中空壳体; 形成在中空壳体的内表面上的荧光膜; 位于中空壳体中的一对冷阴极; 以及包含密封在中空壳体内的氢气的放电气体。 每个冷阴极包括：具有导电性的支撑体; 形成在所述支撑体上的绝缘金刚石膜; 以及将支撑体与绝缘金刚石膜绝缘的绝缘层。

公开(公告)号：US20070046170A1

公开(公告)日：2007-03-01

申请号：US11366468

申请日：2006-03-03

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01J1/62

CPC分类号： H01J61/0672 ,  H01J9/022 ,  H01J61/0675 ,  H01J61/72

摘要： A cold cathode for a discharge lamp includes a metal plate that has bending portions; a diamond film that is formed on a face of the metal plate, except for the bending portions; and a metal member that is mounted on the metal plate.

摘要翻译： 用于放电灯的冷阴极包括具有弯曲部分的金属板; 形成在所述金属板的除了所述弯曲部之外的表面上的金刚石膜; 以及安装在金属板上的金属构件。

公开(公告)号：US20070029935A1

公开(公告)日：2007-02-08

申请号：US11495731

申请日：2006-07-31

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01J17/02

CPC分类号： H01J21/04 ,  H01J3/021

摘要： The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.

摘要翻译： 电子发射装置包括第一电极; 具有面对第一电极的第一面和与第一面相对的第二面的半导体势垒，形成有宽带隙半导体; 形成密封在第一电极和半导体势垒之间的空间的绝缘材料; 封闭在空间中的惰性气体; 第二电极，被设置为面对介于其间的真空的半导体势垒的第二面; 第一电压施加单元，其在所述第一电极和所述半导体势垒之间施加电压; 以及在半导体阻挡层和第二电极之间施加电压的第二施加电压单元。

公开(公告)号：US06103133A

公开(公告)日：2000-08-15

申请号：US42738

申请日：1998-03-17

申请人： Naoshi Sakuma ,  Tomio Ono ,  Tadashi Sakai

发明人： Naoshi Sakuma ,  Tomio Ono ,  Tadashi Sakai

IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/44 ,  H01J9/02 ,  B44C1/22 ,  C23C14/34

CPC分类号： C23C16/27 ,  H01J9/025 ,  H01J2201/30457

摘要： The present invention intends to provide a manufacturing method of a vacuum micro device, including the steps of forming diamond nuclei on a substrate, forming emitters by etching the substrate with use of the diamond nuclei as a mask, forming an insulating layer and a gate electrode layer as a gate electrode on the emitters, such that the insulating layer and the gate electrode layer are stacked in order, and exposing the diamond nuclei by partially etching the gate electrode layer and the insulating layer.

摘要翻译： 本发明旨在提供一种真空微型器件的制造方法，包括以下步骤：在衬底上形成金刚石核，通过使用金刚石核作为掩模蚀刻衬底来形成发射体，形成绝缘层和栅电极 层，作为发射极上的栅电极，使得绝缘层和栅电极层依次层叠，并通过部分蚀刻栅电极层和绝缘层来暴露金刚石核。

公开(公告)号：US6057636A

公开(公告)日：2000-05-02

申请号：US931417

申请日：1997-09-16

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

IPC分类号： H01J1/304 ,  H01J19/24 ,  H01J21/10 ,  H03K17/54 ,  H01J1/46 ,  H01J1/02 ,  H01J1/05

CPC分类号： H01J21/105 ,  H03K17/545

摘要： The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.

摘要翻译： 本发明提供了一种微功率开关，其包括用于发射电子的冷阴极，用于捕获从冷阴极发射的电子的阳极和用于控制从冷阴极发射的电子的量的控制电极，其中冷阴极为 由具有比控制电极更小的电子发射势垒的材料制成，阳极相对于冷阴极施加正电位，并且控制电极施加等于或低于冷阴极电位的电位。

公开(公告)号：US20070218660A1

公开(公告)日：2007-09-20

申请号：US11674354

申请日：2007-02-13

申请人： Hiroaki Yoshida ,  Isamu Yanase ,  Tomio Ono ,  Naoshi Sakuma ,  Mariko Suzuki ,  Tadashi Sakai

发明人： Hiroaki Yoshida ,  Isamu Yanase ,  Tomio Ono ,  Naoshi Sakuma ,  Mariko Suzuki ,  Tadashi Sakai

IPC分类号： H01L21/20

CPC分类号： C30B29/04 ,  C30B25/105 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645

摘要： A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.

摘要翻译： 金刚石膜的形成方法包括在金属材料和半导体材料的复合物中，在低于650℃的温度下，在至少含有碳和氢的第一混合气体中，在金属材料的表面上形成金刚石核，以及 在低于750℃的温度下在包含至少碳和氢的第二混合气体中生长在复合材料中形成的金刚石核，以形成金刚石膜。

公开(公告)号：US20070216024A1

公开(公告)日：2007-09-20

申请号：US11534355

申请日：2006-09-22

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01L23/34

CPC分类号： H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat sink includes a base portion formed of insulating diamond, and a plurality of pressure contacting members formed of the insulating diamond and arranged on the base portion

摘要翻译： 散热器包括由绝缘金刚石形成的基部和由绝缘金刚石形成并且布置在基部上的多个压力接触部件