公开(公告)号：US20130037779A1

公开(公告)日：2013-02-14

申请号：US13584353

申请日：2012-08-13

申请人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

发明人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

IPC分类号： H01L33/06

CPC分类号： H01L33/025 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.

摘要翻译： 氮化物半导体发光器件包括依次提供的n型氮化物半导体层，V坑生成层，中间层，多量子阱发光层和p型氮化物半导体层。 多量子阱发光层是通过交替层叠阻挡层和具有比阻挡层的能隙小的带隙能量的阱层而形成的层。 在多量子阱发光层中部分地形成V凹坑，并且V凹坑的起始点的平均位置位于中间层中。

公开(公告)号：US08816321B2

公开(公告)日：2014-08-26

申请号：US13584353

申请日：2012-08-13

申请人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

发明人： Tadashi Takeoka ,  Yoshihiko Tani ,  Kazuya Araki ,  Yoshihiro Ueta

IPC分类号： H01L29/06 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/025 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.

摘要翻译： 氮化物半导体发光器件包括依次提供的n型氮化物半导体层，V坑生成层，中间层，多量子阱发光层和p型氮化物半导体层。 多量子阱发光层是通过交替层叠阻挡层和具有比阻挡层的能隙小的带隙能量的阱层而形成的层。 在多量子阱发光层中部分地形成V凹坑，并且V凹坑的起始点的平均位置位于中间层中。

公开(公告)号：US20050045979A1

公开(公告)日：2005-03-03

申请号：US10497242

申请日：2002-11-29

申请人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

发明人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L27/14

CPC分类号： H01L31/02161 ,  H01L31/103 ,  H01L31/1035

摘要： A first P-type diffusion layer and a P-type semiconductor layer are provided on a silicon substrate, and two N-type diffusion layers are provided on a front surface of this P-type semiconductor layer to form two light receiving units. Three-layer translucent films, a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are disposed on the N-type diffusion layers and on the P-type semiconductor layer between the two diffusion layers. Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer to below a conventional level and an inversion of a conductive type to reduce a leak current between the light receiving units accordingly.

摘要翻译： 在硅衬底上设置第一P型扩散层和P型半导体层，在该P型半导体层的前表面上设置两个N型扩散层，以形成两个光接收单元。 三层半透膜，第一氧化硅膜，氮化硅膜和第二氧化硅膜设置在两个扩散层之间的N型扩散层和P型半导体层上。 在生产过程中产生的并且在三层半透明膜之间的两个界面中分布和捕获的孔可以将P型半导体层的表面附近的场强降低到传统水平以下并导致导通型 以相应地减小光接收单元之间的泄漏电流。

公开(公告)号：US08358675B2

公开(公告)日：2013-01-22

申请号：US12801800

申请日：2010-06-25

申请人： Kentaro Tani ,  Yoshihiko Tani ,  Toshiyuki Kawakami

发明人： Kentaro Tani ,  Yoshihiko Tani ,  Toshiyuki Kawakami

IPC分类号： H01S3/097

CPC分类号： H01S5/06226 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/32341

摘要： Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.

摘要翻译： 提供了一种减小电容以获得更好响应的氮化物半导体激光器件。 氮化物半导体激光器件包括：有源层; 层叠在有源层上的上包层; 层叠在上包层上方的低介电常数绝缘膜; 以及堆叠在低介电常数绝缘膜之上的焊盘电极。

公开(公告)号：US07307326B2

公开(公告)日：2007-12-11

申请号：US10499357

申请日：2002-12-10

申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

IPC分类号： H01L31/00 ,  H01L31/0232

CPC分类号： H01L31/103 ,  H01L31/02161

摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

公开(公告)号：US20050116320A1

公开(公告)日：2005-06-02

申请号：US10499357

申请日：2002-12-10

申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L23/58

CPC分类号： H01L31/103 ,  H01L31/02161

摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

公开(公告)号：US20110317733A1

公开(公告)日：2011-12-29

申请号：US13067747

申请日：2011-06-23

申请人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

发明人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

IPC分类号： H01S5/22 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2301/176

摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.

摘要翻译： 以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。 脊部的脊宽度为2μm以上且6μm以下。

公开(公告)号：US20100197056A1

公开(公告)日：2010-08-05

申请号：US12656758

申请日：2010-02-16

申请人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

发明人： Daisuke Hanaoka ,  Masaya Ishida ,  Atsushi Ogawa ,  Yoshihiko Tani ,  Takuro Ishikura

IPC分类号： H01L33/00

CPC分类号： H01S5/02212 ,  H01S5/0222 ,  H01S5/32341 ,  Y10T29/5176

摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

公开(公告)号：US07098489B2

公开(公告)日：2006-08-29

申请号：US10483493

申请日：2002-07-03

申请人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo

发明人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo

IPC分类号： H01L29/205

CPC分类号： H01L31/103

摘要： A plurality of N-type diffusion layers are formed a specified distance apart on a P-type semiconductor layer. A P-type leak prevention layer formed between at least N-type diffusion layers prevents leaking between the diffusion layers. A dielectric film is formed in at least a light incident area on a P-type semiconductor layer including the diffusion layers and the leak prevention layer. Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.

摘要翻译： 多个N型扩散层在P型半导体层上分开规定距离地形成。 形成在至少N型扩散层之间的P型防漏层防止了扩散层之间的泄漏。 在包括扩散层和防漏层的P型半导体层的至少入射光区域中形成介电膜。 因此，即使在电介质膜中积累电荷并且在光接收表面上的整个区域具有均匀的灵敏度的情况下，提供了作为分割型光接收元件的分体式光接收元件，并且电路内置 光接收元件和使用分离式光接收元件的光盘装置。

公开(公告)号：US08379682B2

公开(公告)日：2013-02-19

申请号：US13067747

申请日：2011-06-23

申请人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

发明人： Kentaro Tani ,  Toshiyuki Kawakami ,  Yoshihiko Tani

IPC分类号： H01S3/04

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0655 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3211 ,  H01S2301/176

摘要： A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.

摘要翻译： 以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有：由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。 脊部的脊宽度为2μm以上且6μm以下。