公开(公告)号：US08475625B2

公开(公告)日：2013-07-02

申请号：US11381523

申请日：2006-05-03

申请人： Sharma Pamarthy ,  Huutri Dao ,  Xiaoping Zhou ,  Kelly A. McDonough ,  Jivko Dinev ,  Farid Abooameri ,  David E. Gutierrez ,  Jim Zhongyi He ,  Robert S. Clark ,  Dennis M. Koosau ,  Jeffrey William Dietz ,  Declan Scanlan ,  Subhash Deshmukh ,  John P. Holland ,  Alexander Paterson

发明人： Sharma Pamarthy ,  Huutri Dao ,  Xiaoping Zhou ,  Kelly A. McDonough ,  Jivko Dinev ,  Farid Abooameri ,  David E. Gutierrez ,  Jim Zhongyi He ,  Robert S. Clark ,  Dennis M. Koosau ,  Jeffrey William Dietz ,  Declan Scanlan ,  Subhash Deshmukh ,  John P. Holland ,  Alexander Paterson

IPC分类号： H01L21/3065

CPC分类号： H01J37/3266 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/3347

摘要： Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

公开(公告)号：US07695633B2

公开(公告)日：2010-04-13

申请号：US11337153

申请日：2006-01-19

申请人： John P. Holland

发明人： John P. Holland

IPC分类号： C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/67069

摘要： A method of processing a workpiece in a plasma reactor includes coupling RF power from at least three RF power source of three respective frequencies to plasma in the reactor, setting ion energy distribution shape by selecting a ratio between the power levels of a first pair of the at least three RF power sources, and setting ion dissociation and ion density by selecting a ratio between the power levels of a second pair of the at least three RF power sources. The three respective frequencies can be an LF frequency, an HF frequency and a VHF frequency, wherein the first pair corresponds to the LF and HF frequencies and the second pair corresponds to the HF and VHF frequencies. Alternatively, the power sources comprise four RF power sources, and wherein the first pair corresponds to an HF frequency and an LF frequency and the second pair corresponds to a VHF frequency and another frequency. In one embodiment, the second pair corresponds to an upper VHF frequency and a lower VHF frequency. The other frequency may be coupled through an inductive source power applicator, a toroidal plasma source power applicator or a ceiling electrode. Or, all three frequencies may be coupled through a wafer support pedestal of the reactor.

摘要翻译： 在等离子体反应器中处理工件的方法包括将来自三个相应频率的至少三个RF功率源的RF功率耦合到反应器中的等离子体，通过选择第一对的功率级之间的比率来设定离子能量分布形状 至少三个RF功率源，以及通过选择所述至少三个RF功率源的第二对功率电平之间的比率来设定离子解离和离子密度。 三个相应频率可以是LF频率，HF频率和VHF频率，其中第一对对应于LF和HF频率，并且第二对对应于HF和VHF频率。 或者，电源包括四个RF电源，并且其中第一对对应于HF频率和LF频率，并且第二对对应于VHF频率和另一频率。 在一个实施例中，第二对对应于上VHF频率和较低VHF频率。 另一个频率可以通过感应源功率施加器，环形等离子体源功率施加器或天花板电极耦合。 或者，所有三个频率可以通过反应器的晶片支撑基座耦合。

公开(公告)号：US07645710B2

公开(公告)日：2010-01-12

申请号：US11683984

申请日：2007-03-08

申请人： Christopher Sean Olsen ,  Thai Cheng Chua ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Alex M. Paterson ,  Valentin Todorow ,  John P. Holland

发明人： Christopher Sean Olsen ,  Thai Cheng Chua ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Alex M. Paterson ,  Valentin Todorow ,  John P. Holland

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02175 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/02148 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/316 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513

摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.

摘要翻译： 本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。 实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。 实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。 通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。

公开(公告)号：US07645357B2

公开(公告)日：2010-01-12

申请号：US11410697

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00 ,  H01L19/00 ,  H05B31/26

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

公开(公告)号：US07431857B2

公开(公告)日：2008-10-07

申请号：US10843914

申请日：2004-05-12

申请人： Steven C. Shannon ,  Alex Paterson ,  Theodoros Panagopoulos ,  John P. Holland ,  Dennis Grimard ,  Yashushi Takakura

发明人： Steven C. Shannon ,  Alex Paterson ,  Theodoros Panagopoulos ,  John P. Holland ,  Dennis Grimard ,  Yashushi Takakura

IPC分类号： G01R31/00

CPC分类号： H01J37/32082 ,  H01J37/32165 ,  H01J37/32706

摘要： A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.

摘要翻译： 提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。 该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。 第二频率与第一频率不等于期望频率的量。 在腔室中形成的等离子体的特性以期望的频率建立护套调制。

公开(公告)号：US20080206483A1

公开(公告)日：2008-08-28

申请号：US11679122

申请日：2007-02-26

申请人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

发明人： ALEXANDER PATERSON ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

IPC分类号： H05H1/00

CPC分类号： H01J37/32082 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244

摘要： A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power.

摘要翻译： 一种在等离子体反应器的腔室中处理工件的方法，该等离子体反应器具有通过天花板中的气体分配板将工艺气体引入室中，该顶板覆盖工件。 通过将气体流从第一气体输入分配到延伸穿过气体分配板的歧管的多个气体分配孔，并将气体流从多个气体分配孔中的每一个分配到多个气体喷射孔中，从而引入气体 气体分配板。 该方法还包括将气体分配板中的气流限制在具有小于完整圆的对称轴的弧形长度的路径上。 该方法还包括通过气体分布将等离子体源功率电容和电感耦合到腔室中。 该方法还包括通过调节电容耦合VHF功率和电感耦合功率的量之间的比例来调节处理区域中的等离子体离子密度径向分布。

公开(公告)号：US20080178805A1

公开(公告)日：2008-07-31

申请号：US11998468

申请日：2007-11-28

申请人： Alexander M. Paterson ,  John P. Holland ,  Theodoros Panagopoulos ,  Edward P. Hammond ,  Brian K. Hatcher ,  Valentin N. Todorow ,  Dan Katz

发明人： Alexander M. Paterson ,  John P. Holland ,  Theodoros Panagopoulos ,  Edward P. Hammond ,  Brian K. Hatcher ,  Valentin N. Todorow ,  Dan Katz

IPC分类号： C23C16/513

CPC分类号： H01J37/32422 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449

摘要： A plasma reactor is provided for processing a workpiece such as a semiconductor wafer or a dielectric mask. The reactor chamber has a ceiling, a side wall and a workpiece support pedestal inside the chamber and facing the ceiling along an axis of symmetry and defining a chamber volume between the pedestal and the ceiling. An RF plasma source power applicator is provided at the ceiling. An in-situ electrode body inside the chamber lies divides the chamber into upper and lower chamber regions. The in-situ electrode comprises plural flow-through passages extending parallel to the axis and having different opening sizes, the passages being radially distributed by opening size in accordance with a desired radial distribution of gas flow resistance through the in-situ electrode body.

摘要翻译： 提供等离子体反应器来处理诸如半导体晶片或电介质掩模的工件。 反应器室具有在室内的天花板，侧壁和工件支撑基座，并且沿着对称轴面对天花板，并且限定基座和天花板之间的室容积。 在天花板处设置RF等离子体源功率施加器。 室内的原位电极体将腔室分为上腔室和下腔室。 原位电极包括平行于轴线延伸并且具有不同开口尺寸的多个流通通道，根据通过原位电极体的气流阻力的期望径向分布，通道径向分布为开口尺寸。

公开(公告)号：US20070212895A1

公开(公告)日：2007-09-13

申请号：US11614019

申请日：2006-12-20

申请人： Thai Cheng CHUA ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Alex M. Paterson ,  Valentin Todorow ,  John P. Holland

发明人： Thai Cheng CHUA ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Alex M. Paterson ,  Valentin Todorow ,  John P. Holland

IPC分类号： H01L21/31

CPC分类号： H01L21/02175 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/02148 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/316 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513

摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.

摘要翻译： 本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。 实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。 实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。 通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。 本发明的实施例还提供一种簇工具，其适于形成高k电介质材料，终止高k电介质材料的表面，执行任何期望的后处理步骤，并形成多晶硅和/或金属栅极层。

公开(公告)号：US07780864B2

公开(公告)日：2010-08-24

申请号：US11410780

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： G01L21/30 ,  C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.

摘要翻译： 一种在等离子体反应器的室中处理工件的方法，其中通过调节（VHF）电容耦合功率和电感耦合功率之间的比例来控制处理区域中的等离子体离子密度径向分布，同时继续 保持总等离子体源功率的水平。 该方法还可以包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处离子能量的平均值和总体分布。

公开(公告)号：US07777152B2

公开(公告)日：2010-08-17

申请号：US11671927

申请日：2007-02-06

申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

IPC分类号： B23K9/02 ,  H01P5/08 ,  C23C16/00

CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。