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11 条记录 (耗时 0.03 秒)

    OPTOELECTRONIC DEVICES
    3.
    发明申请
    OPTOELECTRONIC DEVICES 有权
    光电器件

    公开(公告)号：US20130015424A1

    公开(公告)日：2013-01-17

    申请号：US13408279

    申请日：2012-02-29

    申请人： Dae-young CHUNG ,  Kyung-sang CHO ,  Tae-ho KIM ,  Byoung-lyong CHOI

    发明人： Dae-young CHUNG ,  Kyung-sang CHO ,  Tae-ho KIM ,  Byoung-lyong CHOI

    IPC分类号： H01L33/02 ,  H01L33/04 ,  H01L31/02

    CPC分类号： H01L51/52 ,  H01L51/0094

    摘要： An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.

    摘要翻译： 提供了一种光电子器件，其包括在有源层和电荷传输层之间形成偶极矩的元件。 光电子器件可以包括在第一电极和第二电极之间的有源层，第一电极和有源层之间的第一电荷传输层，以及有源层和第一电荷传输层之间的偶极子层。 第二电荷输送层可以进一步设置在第二电极和有源层之间。 第二偶极子层可以进一步设置在第二电荷传输层和有源层之间。

    QUANTUM DOT LIGHT EMITTING DEVICE HAVING QUANTUM DOT MULTILAYER
    5.
    发明申请
    QUANTUM DOT LIGHT EMITTING DEVICE HAVING QUANTUM DOT MULTILAYER 有权
    具有量子多层的量子点光发射装置

    公开(公告)号：US20100213438A1

    公开(公告)日：2010-08-26

    申请号：US12708664

    申请日：2010-02-19

    申请人： Kyung-sang CHO ,  Byoung-lyong CHOI ,  Eun-kyung LEE ,  Tae-ho KIM ,  Sang-jin LEE

    发明人： Kyung-sang CHO ,  Byoung-lyong CHOI ,  Eun-kyung LEE ,  Tae-ho KIM ,  Sang-jin LEE

    IPC分类号： H01L33/06

    CPC分类号： H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5096

    摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

    摘要翻译： 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带水平。

    QUANTUM DOT ELECTROLUMINESCENCE DEVICE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    QUANTUM DOT ELECTROLUMINESCENCE DEVICE AND METHOD OF FABRICATING THE SAME 有权
    量子电致发光器件及其制造方法

    公开(公告)号：US20070215856A1

    公开(公告)日：2007-09-20

    申请号：US11612179

    申请日：2006-12-18

    申请人： Soon-jae KWON ,  Byoung-lyong CHOI ,  Kyung-sang CHO ,  Byung-ki KIM

    发明人： Soon-jae KWON ,  Byoung-lyong CHOI ,  Kyung-sang CHO ,  Byung-ki KIM

    IPC分类号： H01L31/00

    CPC分类号： H01L51/5012 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/0037 ,  H01L51/0038 ,  H01L2251/308

    摘要： A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.

    摘要翻译： 提供了一种量子点电致发光器件及其制造方法。 量子点电致发光器件包括绝缘衬底; 由绝缘基板支撑并由交联剂交联的量子点单层或多层组成的量子点发光层; 连接到外部电源的阳极电极和阴极电极，以将载流子注入量子点发光层; 插入在阳极电极和量子点发光层之间并由p型聚合物半导体构成的空穴传输层; 以及插入在阴极电极和量子点发光层之间并由金属氧化物或n型聚合物半导体构成的电子转移层。

    QUANTUM DOT-MATRIX THIN FILM AND METHOD OF PRODUCING THE SAME
    8.
    发明申请
    QUANTUM DOT-MATRIX THIN FILM AND METHOD OF PRODUCING THE SAME 审中-公开
    量子基矩阵薄膜及其制造方法

    公开(公告)号：US20130146834A1

    公开(公告)日：2013-06-13

    申请号：US13594141

    申请日：2012-08-24

    申请人： Kyung-sang CHO ,  Ji-yeon KU ,  Byoung-lyong CHOI

    发明人： Kyung-sang CHO ,  Ji-yeon KU ,  Byoung-lyong CHOI

    IPC分类号： H01L29/02 ,  H01L21/20

    CPC分类号： H01L21/02521 ,  B82Y10/00 ,  H01L21/02601 ,  H01L21/02628 ,  H01L29/0665 ,  H01L29/127

    摘要： A quantum dot-matrix thin film and a method of preparing a quantum dot-matrix thin film are provided. The thin film includes quantum dots; an inorganic matrix in which the quantum dots are imbedded; and an interface layer disposed between the quantum dots and the inorganic matrix to surround surfaces of the quantum dots. The method includes preparing a quantum dot solution in which quantum dots with inorganic ligands are dispersed; adding a matrix precursor to the quantum dot solution; coating the quantum dot solution comprising the matrix precursor on a substrate; and annealing the substrate coated with the quantum dot solution.

    摘要翻译： 提供量子点阵薄膜和制备量子点阵薄膜的方法。 薄膜包括量子点; 嵌入量子点的无机基质; 以及设置在量子点和无机基质之间以围绕量子点的表面的界面层。 该方法包括制备其中分散有无机配体的量子点的量子点溶液; 向量子点溶液中加入基质前体; 将包含基质前体的量子点溶液涂布在基底上; 并对涂覆有量子点溶液的衬底进行退火。

    ENERGY CONVERSION FILM AND QUANTUM DOT FILM COMPRISING QUANTUM DOT COMPOUND, ENERGY CONVERSION LAYER INCLUDING THE QUANTUM DOT FILM, AND SOLAR CELL INCLUDING THE ENERGY CONVERSION LAYER
    9.
    发明申请
    ENERGY CONVERSION FILM AND QUANTUM DOT FILM COMPRISING QUANTUM DOT COMPOUND, ENERGY CONVERSION LAYER INCLUDING THE QUANTUM DOT FILM, AND SOLAR CELL INCLUDING THE ENERGY CONVERSION LAYER 有权
    包含量子化合物的能量转换膜和量子膜，包括量子膜的能量转换层和包括能量转换层的太阳能电池

    公开(公告)号：US20110017292A1

    公开(公告)日：2011-01-27

    申请号：US12843639

    申请日：2010-07-26

    申请人： Kyung-sang CHO ,  Byung-ki KIM

    发明人： Kyung-sang CHO ,  Byung-ki KIM

    IPC分类号： H01L31/0232 ,  H01L31/055

    CPC分类号： H01L31/0352 ,  B82Y10/00 ,  H01G9/2027 ,  H01G9/2031 ,  H01G9/209 ,  H01L31/0384 ,  H01L31/055 ,  Y02E10/52 ,  Y02E10/542 ,  Y02P70/521

    摘要： An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption and emission effects of quantum dots and can convert high energy light to low energy light. The efficiency of a solar cell may be improved by providing the cell with a film that converts light above the spectrum-responsive region to light in the cell's spectrum-responsive region. The absorption wavelength region of the films can be broadened by providing the quantum dot compound in a variety of average particle sizes, for example, by providing a mixture of a first quantum dot compound having a first average particle size and a first quantum dot compound having a second average particle size.

    摘要翻译： 包含量子点化合物的能量转换膜和量子点膜，包括量子点膜的能量转换层和包括能量转换层的太阳能电池。 这些膜作为截止滤光片，使用量子点的光吸收和发射效应阻挡特定能量级的光，并可将高能量光转换成低能量光。 通过向电池提供将光谱响应区域上的光转换成光电子能谱区域中的光的膜，可以提高太阳能电池的效率。 通过提供各种平均粒径的量子点化合物可以扩大膜的吸收波长范围，例如通过提供具有第一平均粒度的第一量子点化合物和具有第一量子点化合物的第一量子点化合物的混合物，其具有 第二平均粒径。