公开(公告)号：US20240363791A1

公开(公告)日：2024-10-31

申请号：US18766336

申请日：2024-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC: H01L31/18 ,  H01L23/544 ,  H01L27/146

CPC classification number: H01L31/1876 ,  H01L23/544 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14687 ,  H01L31/186 ,  H01L31/1888 ,  H01L2223/54426

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

公开(公告)号：US20220359781A1

公开(公告)日：2022-11-10

申请号：US17814726

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC: H01L31/18 ,  H01L27/146 ,  H01L23/544

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

公开(公告)号：US10665466B2

公开(公告)日：2020-05-26

申请号：US16219835

申请日：2018-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Ying Liao ,  Chung-Bin Tseng ,  Po-Zen Chen ,  Yi-Hung Chen ,  Yi-Jie Chen

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/033 ,  H01L29/66 ,  H01L21/28 ,  H01L29/78

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.

公开(公告)号：US09583356B1

公开(公告)日：2017-02-28

申请号：US14871256

申请日：2015-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Keng-Ying Liao ,  Chung-Bin Tseng ,  Po-Zen Chen ,  Yi-Hung Chen ,  Yi-Jie Chen

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/31127 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/78

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.

Abstract translation: 提供一种形成半导体器件结构的方法。 半导体器件结构包括在衬底上形成膜。 半导体器件结构包括在膜上形成第一掩模层。 半导体器件结构包括在第一掩模层上形成第二掩模层。 第二掩模层露出第一掩模层的第一部分。 半导体器件结构包括执行等离子体蚀刻和沉积工艺以去除第一掩模层的第一部分并在第二掩模层的第一侧壁上形成保护层。 在等离子体蚀刻和沉积工艺之后，第一掩模层暴露出膜的第二部分。 半导体器件结构包括使用第一掩模层和第二掩模层作为蚀刻掩模去除第二部分。

公开(公告)号：US12094997B2

公开(公告)日：2024-09-17

申请号：US17814726

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC: H01L31/18 ,  H01L23/544 ,  H01L27/146

CPC classification number: H01L31/1876 ,  H01L23/544 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14687 ,  H01L31/186 ,  H01L31/1888 ,  H01L2223/54426

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

公开(公告)号：US10163646B2

公开(公告)日：2018-12-25

申请号：US15444039

申请日：2017-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Ying Liao ,  Chung-Bin Tseng ,  Po-Zen Chen ,  Yi-Hung Chen ,  Yi-Jie Chen

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/033 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.