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    Image sensor with pad structure
    5.
    发明授权
    Image sensor with pad structure 有权

    公开(公告)号：US11164903B2

    公开(公告)日：2021-11-02

    申请号：US16422271

    申请日：2019-05-24

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Huai-jen Tung ,  Ching-Chung Su ,  Keng-Ying Liao ,  Po-Zen Chen ,  Su-Yu Yeh ,  S. Y. Chen

    IPC分类号： H01L27/146 ,  H01L23/00

    摘要： The present disclosure describes the formation of a pad structure in an image sensor device using a sacrificial isolation region and a silicon oxide based stack with no intervening nitride etch-stop layers. The image sensor device includes a semiconductor layer comprising a first horizontal surface opposite to a second horizontal surface; a metallization layer formed on the second horizontal surface of the semiconductor layer, where the metallization layer includes a dielectric layer. The image sensor device also includes a pad region traversing through the semiconductor layer from the first horizontal surface to the second horizontal surface. The pad region includes an oxide layer with no intervening nitride layers formed on the dielectric layer of the metallization layer and a pad structure in physical contact with a conductive structure of the metallization layer.

    Method for forming semiconductor device structure
    7.
    发明授权
    Method for forming semiconductor device structure 有权
    半导体器件结构形成方法

    公开(公告)号：US09583356B1

    公开(公告)日：2017-02-28

    申请号：US14871256

    申请日：2015-09-30

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd

    发明人： Keng-Ying Liao ,  Chung-Bin Tseng ,  Po-Zen Chen ,  Yi-Hung Chen ,  Yi-Jie Chen

    IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/308

    CPC分类号： H01L21/3065 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/31127 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/78

    摘要： A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask.

    摘要翻译： 提供一种形成半导体器件结构的方法。 半导体器件结构包括在衬底上形成膜。 半导体器件结构包括在膜上形成第一掩模层。 半导体器件结构包括在第一掩模层上形成第二掩模层。 第二掩模层露出第一掩模层的第一部分。 半导体器件结构包括执行等离子体蚀刻和沉积工艺以去除第一掩模层的第一部分并在第二掩模层的第一侧壁上形成保护层。 在等离子体蚀刻和沉积工艺之后，第一掩模层暴露出膜的第二部分。 半导体器件结构包括使用第一掩模层和第二掩模层作为蚀刻掩模去除第二部分。