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    METHODS OF FORMING PHOTONIC DEVICES
    1.
    发明申请
    METHODS OF FORMING PHOTONIC DEVICES 审中-公开

    公开(公告)号：US20190293867A1

    公开(公告)日：2019-09-26

    申请号：US16378313

    申请日：2019-04-08

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tao-Cheng LIU ,  Tsai-Hao Hung ,  Shih-Chi Kuo

    IPC分类号： G02B6/136 ,  H01L21/306 ,  G02B6/122 ,  H01L21/308

    摘要： A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

    PHOTONIC DEVICE AND METHOD HAVING INCREASED QUANTUM EFFECT LENGTH
    6.
    发明申请
    PHOTONIC DEVICE AND METHOD HAVING INCREASED QUANTUM EFFECT LENGTH 有权

    公开(公告)号：US20210351221A1

    公开(公告)日：2021-11-11

    申请号：US16867873

    申请日：2020-05-06

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tsai-Hao HUNG ,  Tao-Cheng LIU ,  Ying-Hsun CHEN

    IPC分类号： H01L27/146

    摘要： Photonic devices and methods having an increased quantum effect length are provided. In some embodiments, a photonic device includes a substrate having a first surface. A cavity extends into the substrate from the first surface to a second surface. A semiconductor layer is disposed on the second surface in the cavity of the substrate, and a cover layer is disposed on the semiconductor layer. The semiconductor layer is configured to receive incident radiation through the substrate and to totally internally reflect the radiation at an interface between the semiconductor layer and the cover layer.

    CIRCULAR GRATING STRUCTURE FOR PHOTONIC DEVICE
    7.
    发明申请
    CIRCULAR GRATING STRUCTURE FOR PHOTONIC DEVICE 有权

    公开(公告)号：US20210343883A1

    公开(公告)日：2021-11-04

    申请号：US16863989

    申请日：2020-04-30

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tao-Cheng LIU ,  Tsai-Hao HUNG ,  Ying-Hsun CHEN

    IPC分类号： H01L31/02 ,  H01L31/0232 ,  H01L31/18

    摘要： An integrated circuit includes a photodetector. The photodetector includes a circular optical grating formed in an annular trench in a semiconductor substrate. The circular optical grating includes dielectric fins and photosensitive fins positioned in the annular trench. The circular optical grating is configured to receive incident light and to direct the incident light around the annular trench through the dielectric fins and the photosensitive fins until the light is absorbed by one of the photosensitive fins.

    METHODS OF FORMING PHOTONIC DEVICES
    8.
    发明申请
    METHODS OF FORMING PHOTONIC DEVICES 审中-公开

    公开(公告)号：US20200249397A1

    公开(公告)日：2020-08-06

    申请号：US16856581

    申请日：2020-04-23

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tao-Cheng LIU ,  Tsai-Hao HUNG ,  Shih-Chi KUO

    IPC分类号： G02B6/136 ,  G02B6/122 ,  H01L21/308 ,  H01L21/306 ,  G02B5/18

    摘要： A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

    METHODS OF FORMING PHOTONIC DEVICES
    9.
    发明申请
    METHODS OF FORMING PHOTONIC DEVICES 有权

    公开(公告)号：US20210199889A1

    公开(公告)日：2021-07-01

    申请号：US17182151

    申请日：2021-02-22

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tao-Cheng LIU ,  Tsai-Hao HUNG ,  Shih-Chi KUO

    IPC分类号： G02B6/136 ,  G02B6/122 ,  H01L21/308 ,  H01L21/306 ,  G02B5/18

    摘要： A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.