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    MICRO-ELECTRO-MECHANICAL SYTEM (MEMS) THERMAL SENSOR
    1.
    发明申请
    MICRO-ELECTRO-MECHANICAL SYTEM (MEMS) THERMAL SENSOR 有权

    公开(公告)号：US20210215550A1

    公开(公告)日：2021-07-15

    申请号：US17216047

    申请日：2021-03-29

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tsai-Hao HUNG ,  Shih-Chi KUO

    IPC分类号： G01K7/32 ,  B81B3/00 ,  B81C1/00

    摘要： The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.

    NOVEL POWER METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR
    2.
    发明申请
    NOVEL POWER METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR 审中-公开

    公开(公告)号：US20200303542A1

    公开(公告)日：2020-09-24

    申请号：US16894644

    申请日：2020-06-05

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chun-Chieh MO ,  Shih-Chi KUO

    IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/10 ,  H01L29/66 ,  H01L21/762

    摘要： A semiconductor device includes: a first semiconductor region disposed over a second semiconductor region, wherein the first and second semiconductor regions have a first doping type and a second doping type, respectively; a first source/drain contact region and a second source/drain contact region having the second doping type and laterally spaced; and a gate electrode disposed laterally between the first and second source/drain contact regions, wherein the gate electrode comprises a first sidewall relatively closer to the first source/drain region and a second sidewall relatively closer to the second source/drain region, and wherein respective cross-sectional areas of the first and second sidewalls of the gate electrode are different from each other.

    NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
    4.
    发明申请
    NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE 审中-公开

    公开(公告)号：US20200266346A1

    公开(公告)日：2020-08-20

    申请号：US16869340

    申请日：2020-05-07

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chun-Chieh MO ,  Shih-Chi KUO

    IPC分类号： H01L45/00 ,  H01L27/24

    摘要： A memory cell includes: a resistive material layer comprising a first portion that extends along a first direction and a second portion that extends along a second direction, wherein the first and second directions are different from each other; a first electrode coupled to a bottom surface of the first portion of the resistive material layer; and a second electrode coupled to the second portion of the resistive material layer.

    METHODS OF FORMING PHOTONIC DEVICES
    5.
    发明申请
    METHODS OF FORMING PHOTONIC DEVICES 审中-公开

    公开(公告)号：US20200249397A1

    公开(公告)日：2020-08-06

    申请号：US16856581

    申请日：2020-04-23

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tao-Cheng LIU ,  Tsai-Hao HUNG ,  Shih-Chi KUO

    IPC分类号： G02B6/136 ,  G02B6/122 ,  H01L21/308 ,  H01L21/306 ,  G02B5/18

    摘要： A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

    NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
    10.
    发明申请
    NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE 审中-公开

    公开(公告)号：US20190123269A1

    公开(公告)日：2019-04-25

    申请号：US15788690

    申请日：2017-10-19

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chun-Chieh MO ,  Shih-Chi KUO

    IPC分类号： H01L45/00

    摘要： A memory cell includes: a first electrode; a resistive material layer comprising one horizontal portion and two vertical portions that are respectively coupled to ends of the horizontal portion; and a second electrode, wherein the second electrode is partially surrounded by a top boundary of the U-shaped profile and the first electrode extends along part of a bottom boundary of the U-shaped profile.