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公开(公告)号:US11990443B2
公开(公告)日:2024-05-21
申请号:US17226643
申请日:2021-04-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuan-Yu Huang , Sung-Hui Huang , Shang-Yun Hou , Shu Chia Hsu , Yu-Yun Huang , Wen-Yao Chang , Yu-Jen Cheng
IPC: H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/498 , H01L25/00 , H01L25/065
CPC classification number: H01L24/17 , H01L21/4853 , H01L21/486 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/49827 , H01L23/49838 , H01L23/562 , H01L24/08 , H01L24/16 , H01L24/80 , H01L25/0655 , H01L25/50 , H01L2221/68331 , H01L2224/08225 , H01L2224/16227 , H01L2224/17517 , H01L2224/80895 , H01L2224/80896 , H01L2924/3511
Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.
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公开(公告)号:US10658334B2
公开(公告)日:2020-05-19
申请号:US15240422
申请日:2016-08-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Jen Cheng , Yu-Chih Huang , Chih-Hua Chen , Yu-Feng Chen , Hao-Yi Tsai
IPC: H01L21/56 , H01L23/538 , H01L25/065 , H01L25/00 , H01L23/00 , H01L21/683 , H01L25/10
Abstract: Package structures and methods for forming the same are provided. The method includes providing a first integrated circuit die and forming a redistribution structure over the first integrated circuit die. The method also includes forming a base layer over the redistribution structure. The base layer has first and second openings. The first openings are wider than the second openings. The method further includes forming first bumps over the redistribution structure. The first bumps have a lower portion filling the first openings. In addition, the method includes bonding a second integrated circuit die to the redistribution structure through second bumps having a lower portion filling the second openings. There is a space between the second integrated circuit die and the base layer. The method also includes forming a molding compound layer over the base layer. The molding compound layer fills the space and surrounds the first and second bumps.
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公开(公告)号:US12237288B2
公开(公告)日:2025-02-25
申请号:US18446732
申请日:2023-08-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuan-Yu Huang , Sung-Hui Huang , Shang-Yun Hou , Shu Chia Hsu , Yu-Yun Huang , Wen-Yao Chang , Yu-Jen Cheng
IPC: H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/498 , H01L25/00 , H01L25/065
Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.
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公开(公告)号:US20240386744A1
公开(公告)日:2024-11-21
申请号:US18789792
申请日:2024-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Chih Huang , Chih-Hua Chen , Yu-Jen Cheng , Chih-Wei Lin , Yu-Feng Chen , Hao-Yi Tsai , Chung-Shi Liu , Chen-Hua Yu
IPC: G06V40/13 , H01L21/56 , H01L23/00 , H01L23/498
Abstract: A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.
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公开(公告)号:US20230387058A1
公开(公告)日:2023-11-30
申请号:US18446732
申请日:2023-08-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuan-Yu Huang , Sung-Hui Huang , Shang-Yun Hou , Shu Chia Hsu , Yu-Yun Huang , Wen-Yao Chang , Yu-Jen Cheng
IPC: H01L23/00 , H01L23/31 , H01L23/498 , H01L25/065 , H01L25/00 , H01L21/48 , H01L21/56 , H01L21/683
CPC classification number: H01L24/17 , H01L23/3128 , H01L23/49827 , H01L25/0655 , H01L24/80 , H01L23/49838 , H01L23/3135 , H01L25/50 , H01L21/486 , H01L24/08 , H01L21/565 , H01L23/562 , H01L21/563 , H01L21/6835 , H01L24/16 , H01L21/4853 , H01L2924/3511 , H01L2224/08225 , H01L2221/68331 , H01L2224/80896 , H01L2224/16227 , H01L2224/17517 , H01L2224/80895
Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.
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公开(公告)号:US20230343133A1
公开(公告)日:2023-10-26
申请号:US18343036
申请日:2023-06-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Chih Huang , Chih-Hua Chen , Yu-Jen Cheng , Chih-Wei Lin , Yu-Feng Chen , Hao-Yi Tsai , Chung-Shi Liu , Chen-Hua Yu
IPC: G06V40/13 , H01L21/56 , H01L23/498 , H01L23/00
CPC classification number: G06V40/1329 , H01L21/561 , H01L23/49827 , H01L24/19 , H01L2224/48091 , H01L2224/73204 , H01L21/568 , H01L2224/04105 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2224/16227 , H01L2224/83005 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/0401 , H01L2224/12105 , H01L2224/13111 , H01L2224/45144 , H01L2224/48227 , H01L2224/81005 , H01L2224/81024 , H01L2224/81815 , H01L2224/92125 , H01L2224/97 , H01L2924/15311 , H01L2224/81911 , H01L2224/85005 , H01L2224/18
Abstract: A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.
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公开(公告)号:US20200327214A1
公开(公告)日:2020-10-15
申请号:US16914609
申请日:2020-06-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Chih Huang , Chih-Hsuan Tai , Yu-Jen Cheng , Chih-Hua Chen , Yu-Feng Chen , Hao-Yi Tsai , Chung-Shi Liu , Chen-Hua Yu
IPC: G06F21/32 , H01L23/00 , H01L23/31 , H01L21/56 , H01L21/683 , H01L23/58 , G06K9/00 , H01L21/48 , H01L23/538 , H01L25/065 , H01L25/00
Abstract: A device package includes a sensor die, one or more additional dies adjacent the sensor die, and a molding compound encircling the sensor die and the one or more additional dies. The device package further includes redistribution layers over the sensor die, the one or more additional dies, and the molding compound. The redistribution layers include first conductive features in a first dielectric layer. The first conductive features electrically connect the sensor die to the one or more additional dies. The redistribution layers further include an array of electrodes in a second dielectric layer over the first dielectric layer and electrically connected to the sensor die.
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公开(公告)号:US09691708B1
公开(公告)日:2017-06-27
申请号:US15214475
申请日:2016-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Chih Huang , Chih-Hua Chen , Chih-Wei Lin , Hao-Yi Tsai , Yu-Feng Chen , Yu-Jen Cheng , Chih-Hsuan Tai
CPC classification number: H01L23/5389 , G06K9/0002 , G06K9/00053 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/565 , H01L21/568 , H01L23/3114 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/562 , H01L23/564 , H01L23/585 , H01L24/19 , H01L2224/04105 , H01L2224/16227 , H01L2224/16237 , H01L2224/19 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2224/83005
Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a molded semiconductor device, a first redistribution layer, a second redistribution layer, and a plurality of through interlayer vias. The molded semiconductor device includes a die. The first redistribution layer is disposed on a first side of the molded semiconductor device. The second redistribution layer is disposed on a second side of the molded semiconductor device opposite to the first side, wherein the second redistribution layer includes a patterned metal layer having an interconnection circuit portion electrically connected to the die and a metal ring surrounding and insulated from the interconnection circuit portion. The through interlayer vias are located right under the metal ring and extending through the molded semiconductor device to be electrically connect the first redistribution layer and the second redistribution layer.
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