公开(公告)号：US20250087598A1

公开(公告)日：2025-03-13

申请号：US18958845

申请日：2024-11-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Chuang ,  Meng-Wei Chou ,  Shin-Puu Jeng

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

Abstract: Semiconductor devices and method of manufacture are provided. In embodiments a conductive connector is utilized to provide an electrical connection between a substrate and an overlying shield. The conductive connector is placed on the substrate and encapsulated with an encapsulant. Once encapsulated, an opening is formed through the encapsulant to expose a portion of the conductive connector. The shield is deposited through the encapsulant to make an electrical connection to the conductive connector.

公开(公告)号：US12170274B2

公开(公告)日：2024-12-17

申请号：US17701083

申请日：2022-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Puu Jeng ,  Techi Wong ,  Po-Yao Chuang ,  Shuo-Mao Chen ,  Meng-Wei Chou

IPC: H01L25/18 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L27/01 ,  H01L49/02

Abstract: An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.

公开(公告)号：US11380666B2

公开(公告)日：2022-07-05

申请号：US17068026

申请日：2020-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hao Tsai ,  Techi Wong ,  Po-Yao Chuang ,  Shin-Puu Jeng ,  Meng-Wei Chou ,  Meng-Liang Lin

IPC: H01L23/31 ,  H01L21/56 ,  H01L25/18 ,  H01L23/00

Abstract: Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.

公开(公告)号：US20210351118A1

公开(公告)日：2021-11-11

申请号：US17383953

申请日：2021-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hao Tsai ,  Techi Wong ,  Meng-Wei Chou ,  Meng-Liang Lin ,  Po-Yao Chuang ,  Shin-Puu Jeng

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

Abstract: A method includes forming an interposer, which includes forming a rigid dielectric layer, and removing portions of the rigid dielectric layer. The method further includes bonding a package component to an interconnect structure, and bonding the interposer to the interconnect structure. A spacer in the interposer has a bottom surface contacting a top surface of the package component, and the spacer includes a feature selected from the group consisting of a metal feature, the rigid dielectric layer, and combinations thereof. A die-saw is performed on the interconnect structure.

公开(公告)号：US11854955B2

公开(公告)日：2023-12-26

申请号：US17383953

申请日：2021-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hao Tsai ,  Techi Wong ,  Meng-Wei Chou ,  Meng-Liang Lin ,  Po-Yao Chuang ,  Shin-Puu Jeng

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L24/09 ,  H01L2224/02379 ,  H01L2924/3511

Abstract: A method includes forming an interposer, which includes forming a rigid dielectric layer, and removing portions of the rigid dielectric layer. The method further includes bonding a package component to an interconnect structure, and bonding the interposer to the interconnect structure. A spacer in the interposer has a bottom surface contacting a top surface of the package component, and the spacer includes a feature selected from the group consisting of a metal feature, the rigid dielectric layer, and combinations thereof. A die-saw is performed on the interconnect structure.

公开(公告)号：US20230307251A1

公开(公告)日：2023-09-28

申请号：US18324686

申请日：2023-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zi-Jheng Liu ,  Yu-Hsiang Hu ,  Jo-Lin Lan ,  Sih-Hao Liao ,  Chen-Cheng Kuo ,  Hung-Jui Kuo ,  Chung-Shi Liu ,  Chen-Hua Yu ,  Meng-Wei Chou

IPC: H01L21/56 ,  H01L23/00 ,  H01L25/10 ,  H01L25/00

CPC classification number: H01L21/561 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L21/568 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2225/06568

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

公开(公告)号：US20220359421A1

公开(公告)日：2022-11-10

申请号：US17870338

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Chuang ,  Meng-Wei Chou ,  Shin-Puu Jeng

IPC: H01L23/552 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56

Abstract: Semiconductor devices and method of manufacture are provided. In embodiments a conductive connector is utilized to provide an electrical connection between a substrate and an overlying shield. The conductive connector is placed on the substrate and encapsulated with an encapsulant. Once encapsulated, an opening is formed through the encapsulant to expose a portion of the conductive connector. The shield is deposited through the encapsulant to make an electrical connection to the conductive connector.

公开(公告)号：US11296065B2

公开(公告)日：2022-04-05

申请号：US16901682

申请日：2020-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Puu Jeng ,  Techi Wong ,  Po-Yao Chuang ,  Shuo-Mao Chen ,  Meng-Wei Chou

IPC: H01L23/02 ,  H01L25/18 ,  H01L27/01 ,  H01L23/31 ,  H01L25/065 ,  H01L49/02 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L21/56 ,  H01L21/683 ,  H01L23/538

Abstract: An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.

公开(公告)号：US20210305170A1

公开(公告)日：2021-09-30

申请号：US16899980

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Chuang ,  Meng-Wei Chou ,  Shin-Puu Jeng

IPC: H01L23/552 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56

Abstract: Semiconductor devices and method of manufacture are provided. In embodiments a conductive connector is utilized to provide an electrical connection between a substrate and an overlying shield. The conductive connector is placed on the substrate and encapsulated with an encapsulant. Once encapsulated, an opening is formed through the encapsulant to expose a portion of the conductive connector. The shield is deposited through the encapsulant to make an electrical connection to the conductive connector.

公开(公告)号：US12300592B2

公开(公告)日：2025-05-13

申请号：US18351809

申请日：2023-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hao Tsai ,  Techi Wong ,  Meng-Wei Chou ,  Meng-Liang Lin ,  Po-Yao Chuang ,  Shin-Puu Jeng

IPC: H01L23/48 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498

Abstract: A method includes forming an interposer, which includes forming a rigid dielectric layer, and removing portions of the rigid dielectric layer. The method further includes bonding a package component to an interconnect structure, and bonding the interposer to the interconnect structure. A spacer in the interposer has a bottom surface contacting a top surface of the package component, and the spacer includes a feature selected from the group consisting of a metal feature, the rigid dielectric layer, and combinations thereof. A die-saw is performed on the interconnect structure.