SEMICONDUCTOR PROCESS TECHNOLOGY ASSESSMENT
    1.
    发明公开

    公开(公告)号:US20240176944A1

    公开(公告)日:2024-05-30

    申请号:US18434345

    申请日:2024-02-06

    IPC分类号: G06F30/398 G06F119/18

    CPC分类号: G06F30/398 G06F2119/18

    摘要: A method of process technology assessment is provided. The method includes: defining a scope of the process technology assessment, the scope comprising an original process technology and a first process technology; modeling a first object in an integrated circuit into a resistance domain and a capacitance domain; generating a first resistance scaling factor and a first capacitance scaling factor based on the modeling, the original process technology, and the first process technology; and utilizing, by an electronic design automation (EDA) tool, the first resistance scaling factor and the first capacitance scaling factor for simulation of the integrated circuit.

    MULTIPLE SUPPLY VOLTAGE TRACKS AND STANDARD CELLS

    公开(公告)号:US20240039518A1

    公开(公告)日:2024-02-01

    申请号:US17873952

    申请日:2022-07-26

    IPC分类号: H03K3/012 H03K17/56

    CPC分类号: H03K3/012 H03K17/56

    摘要: A device including a first supply voltage track, a second supply voltage track, a first reference track, a first standard cell, and a second standard cell. The first supply voltage track is configured to provide a first voltage and the second supply voltage track is configured to provide a second voltage that is greater than the first voltage. The first standard cell is configured to be electrically connected to the first supply voltage track to receive the first voltage and electrically connected to the first reference track. The second standard cell is configured to be electrically connected to the second supply voltage track to receive the second voltage and electrically connected to the first reference track.

    VARIABLE TRACKS AND NON-DEFAULT RULE ROUTING

    公开(公告)号:US20230014110A1

    公开(公告)日:2023-01-19

    申请号:US17668117

    申请日:2022-02-09

    IPC分类号: G06F30/392 G06F30/394

    摘要: A device including first track groups on a first conductive layer of an integrated circuit. Each of the first track groups including at least one of a different first track group pitch, a different first track group spacing, and a different first track group width than the other first track groups. Where each of the first track groups includes first tracks that have at least one of a different first track width and a different first track spacing than the first tracks in the other first track groups.