公开(公告)号：US07985714B2

公开(公告)日：2011-07-26

申请号：US11902471

申请日：2007-09-21

申请人： Hiroyuki Kato ,  Takashi Hase ,  Kyoji Zaitsu

发明人： Hiroyuki Kato ,  Takashi Hase ,  Kyoji Zaitsu

IPC分类号： H01B12/00 ,  H01L39/24

CPC分类号： H01L39/2409 ,  Y10S420/901 ,  Y10S428/93 ,  Y10S505/887 ,  Y10T29/49014 ,  Y10T428/12819

摘要： A precursor for fabricating a Nb3Sn superconducting wire by an internal Sn process includes one or a plurality of stabilizing copper portions collectively disposed in the center, each stabilizing copper portion being provided with a diffusion barrier layer in the periphery thereof, and a superconducting matrix portion disposed so as to surround the one or the plurality of stabilizing copper portions, the superconducting matrix portion including a Nb or Nb-based alloy core and a Sn or Sn-based alloy core embedded in a Cu or Cu-based alloy matrix.

摘要翻译： 通过内部Sn工艺制造Nb 3 Sn超导线的前体包括一个或多个稳定的铜部分，其集中设置在中心，每个稳定的铜部分在其周边设置有扩散阻挡层，并且设置超导矩阵部分 围绕一个或多个稳定化铜部分，超导矩阵部分包括Nb或Nb基合金芯和嵌入Cu或Cu基合金基体中的Sn或Sn基合金芯。

公开(公告)号：US07781319B2

公开(公告)日：2010-08-24

申请号：US12048265

申请日：2008-03-14

申请人： Takashi Hase

发明人： Takashi Hase

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/823835 ,  H01L21/28097 ,  H01L21/823842 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： According to the present invention, it is provided a method of manufacturing a semiconductor device comprising a PMOS transistor and a NMOS transistor, wherein the method facilitates obtaining a FUSI phase of a suitable composition for the NMOS transistor and the PMOS transistor respectively, with fewer mask layers and through a fewer number of manufacturing steps.

摘要翻译： 根据本发明，提供一种制造包括PMOS晶体管和NMOS晶体管的半导体器件的方法，其中该方法分别有助于获得用于NMOS晶体管和PMOS晶体管的合适组成的FUSI相，具有较少的掩模 层数和数量较少的制造步骤。

公开(公告)号：US20090267158A1

公开(公告)日：2009-10-29

申请号：US12094755

申请日：2006-11-21

申请人： Takashi Hase

发明人： Takashi Hase

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/28097 ,  H01L21/823871 ,  H01L29/4975 ,  H01L29/66545

摘要： There is provided a semiconductor device in which deviation in a work function is prevented by a gate electrode having a uniform composition and which has excellent operation properties by effectively controlling a Vth. The semiconductor device comprises an NMOS transistor and a PMOS transistor with a common line electrode, characterized in that the line electrode comprise an electrode section (A), an electrode section (B) and a diffusion barrier region formed in a part over an isolation region so that the electrode sections (A) and (B) are kept out of contact and the diffusion barrier region meets at least one of the following conditions (1) and (2). (1) The diffusion coefficient D1 in the above diffusion barrier region of the constituent element A′ of the above electrode section (A) is lower than the interdiffusion coefficient D2 of the constituent element A′ between electrode section (A) materials. (2) The diffusion coefficient D3 in the above diffusion barrier region of the constituent element B′ of the above electrode section (B) is lower than the interdiffusion coefficient D4 of the constituent element B′ between electrode section (B) materials.

摘要翻译： 提供了一种半导体器件，通过有效地控制Vth，通过具有均匀组成的栅电极防止功函中的偏差，并且具有优异的操作特性。 半导体器件包括NMOS晶体管和具有公共线电极的PMOS晶体管，其特征在于，线电极包括电极部分（A），电极部分（B）和形成在隔离区域上的部分中的扩散阻挡区域 使得电极部分（A）和（B）保持不接触，并且扩散阻挡区域满足以下条件（1）和（2）中的至少一个。 （1）上述电极部（A）的构成元素A'的扩散阻挡区域的扩散系数D1低于电极部（A）材料之间的构成元素A'的相互扩散系数D2。 （2）上述电极部（B）的构成元件B'的扩散阻挡区域的扩散系数D3低于电极部（B）材料之间的构成元件B'的相互扩散系数D4。

公开(公告)号：US06440751B1

公开(公告)日：2002-08-27

申请号：US09653141

申请日：2000-08-31

申请人： Takashi Hase

发明人： Takashi Hase

IPC分类号： H01L2100

CPC分类号： C23C18/1225 ,  C23C18/1216 ,  C23C18/1283 ,  C23C18/1295 ,  H01L21/31691 ,  H01L28/56

摘要： In a method of manufacturing a thin film, a buffer layer is formed a substrate. Thereafter, a ferroelectric thin film material is applied thereto before thermally decomposing the buffer layer. Subsequently, the buffer layer and the ferroelectric thin film are decomposed together. Finally, a crystallized thermal process is performed.

摘要翻译： 在制造薄膜的方法中，缓冲层形成为基板。 此后，在热分解缓冲层之前施加铁电薄膜材料。 随后，缓冲层和铁电薄膜一起分解。 最后，进行结晶热处理。

公开(公告)号：US06194227B1

公开(公告)日：2001-02-27

申请号：US09174393

申请日：1998-10-14

申请人： Takashi Hase

发明人： Takashi Hase

IPC分类号： H01L2100

CPC分类号： H01L21/31691 ,  H01L28/56

摘要： The surface of a Si substrate is coated with a lower electrode of precious metal (Pt), then a buffer layer comprising an oxide thin film containing Bi is deposited. On the surface of the buffer layer, a thin film of a Bi layer structured ferroelectric substance is formed. Thus, reaction of the Bi layer structured ferroelectric substance with the precious metal coating the Si substrate is avoided during crystallization carried out at a low temperature. Therefore, deviation in composition of the thin film thus formed is suppressed to provide the thin film with a high density. When the thickness of the buffer layer is not greater than five percent of that of the Bi layer structured ferroelectric thin film, electrical characteristics of a capacitor are not deteriorated. When electrical connection is conducted by polycrystalline Si, production of oxide can be avoided by deposition at 650° C.

摘要翻译： Si衬底的表面涂覆有贵金属（Pt）的下电极，然后沉积包含含有Bi的氧化物薄膜的缓冲层。 在缓冲层的表面形成有Bi层结构的铁电体的薄膜。 因此，在低温下进行结晶时避免了Bi层结构的铁电体与覆盖Si衬底的贵金属的反应。 因此，抑制如此形成的薄膜的组成偏差，从而提供高密度的薄膜。 当缓冲层的厚度不大于Bi层结构的铁电薄膜的厚度的5％时，电容器的电特性不会劣化。 当通过多晶硅进行电连接时，可以通过在650℃下沉积来避免生成氧化物。

公开(公告)号：US5421890A

公开(公告)日：1995-06-06

申请号：US98903

申请日：1993-07-29

申请人： Ryusuke Kita ,  Takashi Hase ,  Masato Sasaki ,  Tadataka Morishita

发明人： Ryusuke Kita ,  Takashi Hase ,  Masato Sasaki ,  Tadataka Morishita

IPC分类号： C23C8/12 ,  C04B41/50 ,  C04B41/85 ,  C04B41/87 ,  C23C8/16 ,  C23C14/08 ,  C23C14/24 ,  C23C14/58 ,  C30B23/02 ,  C23C16/40

CPC分类号： C04B41/009 ,  C04B41/5027 ,  C04B41/5072 ,  C04B41/85 ,  C04B41/87 ,  C23C14/08 ,  C23C14/24 ,  C30B23/002 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22

摘要： Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

摘要翻译： 公开了一种用于在正确控制氧化物薄膜的组成的同时以高生产率制造具有优异的结晶度和纯度的氧化物薄膜的氧化物薄膜制造方法和装置。 在将真空室内的压力降低到1×10 -9 Torr或更小之后，通过蒸发特定的金属元素并将金属元素的蒸气沉积在真空室中的基底上来形成金属薄膜。 然后，盖构件向上移动以紧密地邻接到盖接收构件，从而形成用于将基底气密地封闭在真空室中的气密室。 随着保持气密室周围的真空度，通过气体管道将O2气体直接引入气密室，以氧化金属薄膜，从而形成氧化物薄膜。 同时，气密室内的气体通过气体管道直接排出真空室外。

公开(公告)号：US5231328A

公开(公告)日：1993-07-27

申请号：US899157

申请日：1992-06-15

申请人： Takayuki Hisamune ,  Takashi Hase

发明人： Takayuki Hisamune ,  Takashi Hase

IPC分类号： C09K11/77 ,  H01J61/44

CPC分类号： H01J61/44 ,  C09K11/774

摘要： A bivalent europium-activated alkaline earth haloborate phosphor which contains lithium as coactivator, a process for its production, and an ultraviolet ray excited fluorescent tube such as a fluorescent lamp having a fluorescent layer containing such a phosphor as the blue-emitting component.

摘要翻译： 含有锂作为共激活剂的二价铕活化碱土金属卤硼酸盐荧光体，其制造方法，以及荧光灯等紫外线激发荧光管，其荧光层含有蓝色发光成分的荧光体。

公开(公告)号：US5122423A

公开(公告)日：1992-06-16

申请号：US326641

申请日：1989-03-21

申请人： Takashi Hase ,  Hiromi Matsumura ,  Yoshihiko Onishi ,  Hidetaka Hayashi ,  Motoharu Sato

发明人： Takashi Hase ,  Hiromi Matsumura ,  Yoshihiko Onishi ,  Hidetaka Hayashi ,  Motoharu Sato

IPC分类号： G11B5/82 ,  G11B5/64 ,  G11B5/72 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84

CPC分类号： G11B5/7325 ,  G11B5/656 ,  G11B5/72 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12625 ,  Y10T428/12743

摘要： Magnetic recording media, wherein a substrate of Al-Mg alloy prepared from aluminum metal at a purity of higher than 99.99% is surface finished by electrolytic abrasive polishing and a thin film layer of ferromagnetic material is formed thereover as a recording layer.The Al-Mg alloy is preferably prepared by rapid-cooling solidification.

摘要翻译： 磁记录介质，其中由铝金属制备的纯度高于99.99％的Al-Mg合金的基底通过电解研磨抛光进行表面处理，并在其上形成铁磁材料薄膜作为记录层。 Al-Mg合金优选通过快速冷却固化来制备。

公开(公告)号：US4931651A

公开(公告)日：1990-06-05

申请号：US222620

申请日：1988-07-21

申请人： Akiyasu Kagami ,  Takashi Hase

发明人： Akiyasu Kagami ,  Takashi Hase

IPC分类号： C09K11/61 ,  C09K11/64

CPC分类号： C09K11/613 ,  C09K11/612 ,  C09K11/642

摘要： A phosphor for emission of light under low-velocity electron excitation having the formula:(Zn.sub.1-X,Cd.sub.x)S:aLi,bM.sup.I,cX (I)wherein 0.ltoreq.x.ltoreq.1, 0 0, M.sup.I is at least one element selected from the group consisting of Na, K, Ag, Rb, Cs, Au and Cu, and X is at least one element selected from the group consisting of Al, Cl, Br and I.

摘要翻译： 用于在低速电子激发下发射光的荧光体具有下式：（Zn1-X，Cdx）S：aLi，bMI，cX（I）其中0 / = 0，c> 0，MI是选自Na，K，Ag，Rb，Cs，Au和Cu中的至少一种元素，X是选自 由Al，Cl，Br和I组成的组。

公开(公告)号：US4551397A

公开(公告)日：1985-11-05

申请号：US596387

申请日：1984-04-03

申请人： Masachika Yaguchi ,  Tomoki Mikami ,  Takashi Hase

发明人： Masachika Yaguchi ,  Tomoki Mikami ,  Takashi Hase

IPC分类号： C09K11/61 ,  C09K11/62 ,  C09K11/64 ,  C09K11/70 ,  C09K11/71 ,  C09K11/74 ,  C09K11/75 ,  H01J29/32 ,  C09K11/44

CPC分类号： C09K11/642 ,  C09K11/612 ,  C09K11/626 ,  C09K11/644 ,  C09K11/703 ,  C09K11/71 ,  C09K11/7442 ,  C09K11/7464 ,  C09K11/7471 ,  C09K11/757 ,  H01J29/32

摘要： A zinc silicate phosphor represented by the formula:(Zn.sub.1-x-2y, M.sup.II.sub.x, Na.sub.2y).sub.2 SiO.sub.4 :Mn.sub.a, As.sub.b, M.sub.c (I)where M.sup.II is at least one element selected from the group consisting of barium, calcium and strontium, M is at least one of antimony and bismuth, and x, y, a, b and c satisfy the conditions of O.ltoreq.x.ltoreq.5.times.10.sup.-2, O.ltoreq.2y.ltoreq.5.times.10.sup.-3, 5.times.10.sup.-5 .ltoreq.a.ltoreq.3.times.10.sup.-2, O.ltoreq.b.ltoreq.5.times.10.sup.-3 and O

摘要翻译： 由式（Zn1-x-2y，MIIx，Na2y）2SiO4：Mna，Asb，Mc（I）表示的硅酸锌荧光体，其中MII为选自钡，钙和锶中的至少一种元素，M 是锑和铋中的至少一种，并且x，y，a，b和c满足O X = 5×10 -2，O 2 = 5×10 -3，5×10 -5 分别（= x×2×2×2×2×2×3×10 -3×10 -3×10 -3×10 -3×10 -2×××××××10 -3）。