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16 条记录 (耗时 0.023 秒)

    Apparatus for producing oxide thin film
    1.
    发明授权
    Apparatus for producing oxide thin film 失效
    氧化物薄膜的制造装置

    公开(公告)号：US5421890A

    公开(公告)日：1995-06-06

    申请号：US98903

    申请日：1993-07-29

    申请人： Ryusuke Kita ,  Takashi Hase ,  Masato Sasaki ,  Tadataka Morishita

    发明人： Ryusuke Kita ,  Takashi Hase ,  Masato Sasaki ,  Tadataka Morishita

    IPC分类号： C23C8/12 ,  C04B41/50 ,  C04B41/85 ,  C04B41/87 ,  C23C8/16 ,  C23C14/08 ,  C23C14/24 ,  C23C14/58 ,  C30B23/02 ,  C23C16/40

    CPC分类号： C04B41/009 ,  C04B41/5027 ,  C04B41/5072 ,  C04B41/85 ,  C04B41/87 ,  C23C14/08 ,  C23C14/24 ,  C30B23/002 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22

    摘要： Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

    摘要翻译： 公开了一种用于在正确控制氧化物薄膜的组成的同时以高生产率制造具有优异的结晶度和纯度的氧化物薄膜的氧化物薄膜制造方法和装置。 在将真空室内的压力降低到1×10 -9 Torr或更小之后，通过蒸发特定的金属元素并将金属元素的蒸气沉积在真空室中的基底上来形成金属薄膜。 然后，盖构件向上移动以紧密地邻接到盖接收构件，从而形成用于将基底气密地封闭在真空室中的气密室。 随着保持气密室周围的真空度，通过气体管道将O2气体直接引入气密室，以氧化金属薄膜，从而形成氧化物薄膜。 同时，气密室内的气体通过气体管道直接排出真空室外。

    Method for identifying surface atoms of solid sample and apparatus therefor
    8.
    发明授权
    Method for identifying surface atoms of solid sample and apparatus therefor 失效
    确定固体样品表面原子的方法及其设备

    公开(公告)号：US5635716A

    公开(公告)日：1997-06-03

    申请号：US614678

    申请日：1996-03-13

    申请人： Ziyuan Liu ,  Tadataka Morishita

    发明人： Ziyuan Liu ,  Tadataka Morishita

    IPC分类号： G01N23/20 ,  G01N23/225 ,  H01J37/252 ,  H01J37/26

    CPC分类号： G01N23/2251 ,  H01J37/252 ,  H01J2237/255 ,  H01J2237/2561

    摘要： The atoms constituting a surface of a solid sample are identified by first forming, on the surface, island-like deposits of a substance capable of generating fluorescent X-rays upon being energized by an electron beam. The deposits are then energized with the electron beam so that fluorescent X-rays are emitted therefrom and reflected on the surface. From the critical angle for total reflection of the fluorescent X-rays reflected on that portion of the surface of the sample on which no deposits are present, the atoms constituting the surface may be determined. An apparatus for carrying out the above method is also disclosed which is a modification of the conventional RHEED/TRAXS device.

    摘要翻译： 通过首先在表面上形成能够通过电子束激发能够产生荧光X射线的物质的岛状沉积物来识别构成固体样品表面的原子。 然后用电子束使沉积物通电，使得荧光X射线从其发射并在表面上反射。 从在没有沉积物的样品表面部分上反射的荧光X射线的全反射的临界角度，可以确定构成表面的原子。 还公开了用于执行上述方法的装置，其是常规RHEED / TRAXS装置的修改。

    Process for preparing single crystal material and composite material for forming such single crystal material
    10.
    发明授权
    Process for preparing single crystal material and composite material for forming such single crystal material 失效
    制备单晶材料的方法和用于形成这种单晶材料的复合材料

    公开(公告)号：US5837053A

    公开(公告)日：1998-11-17

    申请号：US563383

    申请日：1995-11-28

    申请人： Furen Wang ,  Tadataka Morishita

    发明人： Furen Wang ,  Tadataka Morishita

    IPC分类号： C30B1/02 ,  C30B29/22 ,  H01L21/205

    CPC分类号： C30B1/02 ,  C30B29/32

    摘要： A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.

    摘要翻译： 通过在具有与非晶物质相同的化学组成的单晶的衬底的表面上形成无定形物质层来制备单晶材料，将所得的复合材料加热以将非晶层外延生长成为 单晶层。 还公开了一种用于制造这种单晶材料的复合材料，其包括单晶衬底和与衬底具有相同化学组成的无定形物质层，该层具有如下层的厚度： 整体可以外延生长以制成单晶层。