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    NMR ANALYZER FOR CLINICAL EXAMINATIONS
    1.
    发明申请
    NMR ANALYZER FOR CLINICAL EXAMINATIONS 审中-公开
    核磁共振分析仪用于临床检查

    公开(公告)号：US20130009643A1

    公开(公告)日：2013-01-10

    申请号：US13636612

    申请日：2011-03-25

    申请人： Takashi Miki ,  Yasuaki Terao

    发明人： Takashi Miki ,  Yasuaki Terao

    IPC分类号： G01R33/341 ,  G01R33/30

    CPC分类号： G01R33/307 ,  G01R33/34069 ,  G01R33/34092 ,  G01R33/3635 ,  G01R33/3804 ,  G01R33/3875 ,  G01R33/465

    摘要： A compact NMR analyzer for clinical examinations which is suitable for use at medical facilities is provided. An NMR analyzer for clinical examinations 1 for analyzing a sample including a liquid component extracted from a human body, includes: a solution feeding pump 6 that feeds a sample; a solution feeding pipe 18 that receives the sample fed from the solution feeding pump 6; a superconducting magnet 7 that encloses the solution feeding pipe 18 around an axis thereof; a helium container 9 that houses the superconducting magnet 7 and liquid helium 8; a vacuum container 12 that has a vacuum chamber and that houses the helium container 9 inside the vacuum chamber; heat shields 10 and 11 that cover the helium container 9 in the vacuum container 12; and a recondensing unit 3 that recondenses helium vaporized inside the helium container 9 and that cools the heat shields 10 and 11.

    摘要翻译： 提供了适用于医疗设施的临床检查的紧凑型NMR分析仪。 用于分析包括从人体提取的液体成分的样品的临床检查用NMR分析仪1包括：供给样品的溶液供给泵6; 接收从溶液供给泵6供给的样本的溶液供给管18; 围绕其轴线包围溶液供给管18的超导磁体7; 容纳超导磁体7和液氦8的氦容器9; 真空容器12，其具有真空室并且容纳真空室内的氦容器9; 覆盖真空容器12中的氦容器9的隔热罩10和11; 以及再冷凝单元3，其再凝结在氦容器9内蒸发的氦并且冷却隔热罩10和11。

    Cu ALLOY FILM FOR DISPLAY DEVICE AND DISPLAY DEVICE
    3.
    发明申请
    Cu ALLOY FILM FOR DISPLAY DEVICE AND DISPLAY DEVICE 有权
    用于显示器件和显示器件的铜合金膜

    公开(公告)号：US20130122323A1

    公开(公告)日：2013-05-16

    申请号：US13810949

    申请日：2011-07-21

    申请人： Aya Miki ,  Toshihiro Kugimiya ,  Yasuaki Terao

    发明人： Aya Miki ,  Toshihiro Kugimiya ,  Yasuaki Terao

    IPC分类号： G09F9/30

    CPC分类号： G09F9/30 ,  C22C9/00 ,  C22C9/01 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22F1/08 ,  C23C14/185 ,  C23C28/321 ,  C23C28/322 ,  C23C28/345 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L21/2855 ,  H01L21/32051 ,  H01L23/53233 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3279 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/7869 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/12611 ,  H01L2924/00

    摘要： The present invention provides a display device which is provided with a Cu alloy film having high adhesion to an oxygen-containing insulator layer and a low electrical resistivity. The present invention relates to a Cu alloy film for a display device, said film having a stacked structure including a first layer (Y) composed of a Cu alloy containing, in total, 1.2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb and Mn, and a second layer (X) composed of pure Cu or a Cu alloy having Cu as a main component and an electrical resistivity lower than that of the first layer (Y). A part of or the whole first layer (Y) is directly in contact with an oxygen-containing insulator layer (27), and in the case where the first layer (Y) contains Zn or Ni, the thickness of the first layer (Y) is 10-100 nm, and in the case where the first layer (Y) does not contain Zn and Ni, the thickness of the first layer (Y) is 5-100 nm. The present invention also relates to a display device having the Cu alloy film.

    摘要翻译： 本发明提供一种显示装置，其具有与含氧绝缘体层具有高粘附性和低电阻率的Cu合金膜。 本发明涉及一种用于显示装置的Cu合金膜，所述膜具有堆叠结构，该层叠结构包括由Cu合金构成的第一层（Y），其中总共含有1.2-20atm％的至少一种选自 由Zn，Ni，Ti，Al，Mg，Ca，W，Nb和Mn组成的组以及以Cu为主要成分的纯Cu或Cu合金构成的第二层（X），电阻率低于Cu 的第一层（Y）。 一部分或全部第一层（Y）与含氧绝缘体层（27）直接接触，在第一层（Y）含有Zn或Ni的情况下，第一层（Y ）为10〜100nm，在第一层（Y）不含有Zn和Ni的情况下，第一层（Y）的厚度为5〜100nm。 本发明还涉及具有Cu合金膜的显示装置。

    Wiring structure, display apparatus, and semiconductor device
    4.
    发明授权
    Wiring structure, display apparatus, and semiconductor device 有权
    接线结构，显示装置和半导体器件

    公开(公告)号：US08598580B2

    公开(公告)日：2013-12-03

    申请号：US13639028

    申请日：2011-03-30

    申请人： Yasuaki Terao ,  Shinya Morita ,  Aya Miki ,  Katsufumi Tomihisa ,  Hiroshi Goto

    发明人： Yasuaki Terao ,  Shinya Morita ,  Aya Miki ,  Katsufumi Tomihisa ,  Hiroshi Goto

    IPC分类号： H01L29/16

    CPC分类号： H01L23/53238 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/3211 ,  H01L21/76867 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4958 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.

    摘要翻译： 公开了即使消除通常设置在Cu合金布线膜和半导体层之间的阻挡金属层以及具有优异的粘附性的布线结构，也可以获得优异的低接触电阻的布线结构。 布线结构在基板上依次从基板侧设置有半导体层和Cu合金层。 在半导体层和Cu合金层之间包含层叠结构。 层叠结构由含有选自氮，碳，氟和氧中的至少一种元素的（N，C，F，O）层构成，Cu-Si扩散层包含Cu和 Si，从衬底侧依次。 构成（N，C，F，O）层的由氮，碳，氟和氧构成的组中的至少一种元素与半导体层中的Si键合。 Cu合金层是含有Cu-X合金层（第一层）和第二层的层叠结构。

    WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE
    6.
    发明申请
    WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE 有权
    接线结构，显示设备和半导体器件

    公开(公告)号：US20130026470A1

    公开(公告)日：2013-01-31

    申请号：US13639028

    申请日：2011-03-30

    申请人： Yasuaki Terao ,  Shinya Morita ,  Aya Miki ,  Katsufumi Tomihisa ,  Hiroshi Goto

    发明人： Yasuaki Terao ,  Shinya Morita ,  Aya Miki ,  Katsufumi Tomihisa ,  Hiroshi Goto

    IPC分类号： H01L29/16

    CPC分类号： H01L23/53238 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/3211 ,  H01L21/76867 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4958 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.

    摘要翻译： 公开了即使消除通常设置在Cu合金布线膜和半导体层之间的阻挡金属层以及具有优异的粘附性的布线结构，也可以获得优异的低接触电阻的布线结构。 布线结构在基板上依次从基板侧设置有半导体层和Cu合金层。 在半导体层和Cu合金层之间包含层叠结构。 层叠结构由含有选自氮，碳，氟和氧中的至少一种元素的（N，C，F，O）层构成，Cu-Si扩散层包含Cu和 Si，从衬底侧依次。 构成（N，C，F，O）层的由氮，碳，氟和氧构成的组中的至少一种元素与半导体层中的Si键合。 Cu合金层是含有Cu-X合金层（第一层）和第二层的层叠结构。