摘要:
In an organic EL device 1, when a voltage is applied across an anode 3 and a cathode 5, holes are moved in a hole transport layer 41 and electrons are moved in an electron transport layer 43, and the holes and the electrons are recombined in a light emitting layer 42 to emit light. A light emitting material is used to form the light emitting layer 42. When the light emitting layer 42 is formed using the light emitting material, the light emitting layer contains one or more kinds of metallic impurities, but an amount of a metallic impurity of which content is the largest among the metallic impurities contained in the layer is 2.5 ppm or less, or when the light emitting material is dissolved in a liquid so that the concentration thereof becomes 2.0 wt %, the liquid contains one or more kinds of metallic impurities, but an amount of the metallic impurity of which content is the largest among the metallic impurities contained in the liquid is 50 ppb or less. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device 1 can be suppressed.
摘要:
An organic EL device with a voltage applied across an anode and a cathode so that holes are moved in a hole transport layer and electrons are moved in an electron transport layer, and the holes and the electrons are recombined in a light emitting layer to emit light. The light emitting layer is formed of light emitting material having one or more kinds of metallic impurities. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device can be suppressed.
摘要:
In an organic EL device, when a voltage is applied across an anode and a cathode, holes are moved in a hole transport layer and electrons are moved in an electron transport layer, and the holes and the electrons are recombined in a light emitting layer. In the light emitting layer, excitons are produced by energy released upon the recombination, and the excitons release energy in the form of fluorescence or phosphorescence or emit light when returning to the ground state. The hole transport material is used in the hole transport layer, in which the amount of cationic impurities and/or the amount of anionic impurities are controlled to be small, so that the decrease of light-emission luminance of the organic EL device is suppressed and excellent light emitting properties are maintained for a long period of time.
摘要:
A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R—X—O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom. Molecules of this compound (1) are oriented along a thickness direction of the intermediate layer in a state that each hydrocarbon group R is positioned on the side of the light emitting layer and each atom M is positioned on the side of the cathode.
摘要:
A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.
摘要:
An electronic device having an intermediate layer which can transfer smoothly carriers between two layers adjacent to the intermediate layer and having improved properties, and electronic equipment having high reliability are provided. An electronic device includes a pair of electrodes and laminated layers provided between the electrodes. The laminated layers include a hole transport layer (first organic semiconductor layer), a light emitting layer (second organic semiconductor layer), and an intermediate layer provided between the first and second organic semiconductor layers so as to make contact with both of the hole transport layer and the light emitting layer. The intermediate layer is constituted of a compound represented by a general formula A1-B-A2. In this formula, each of the A1 and A2 is a group including at least one of a primary amino group, a secondary amino group, a tertiary amino group, a hydroxyl group, a carbonyl group and a carboxyl group, the A1 and A2 are the same or different, and optionally simultaneously exist, and the B is a group including a fluorene ring. Molecules of the compound are oriented in a state that each group A1 and each group A2 are positioned on the side of the hole transport layer and each group B is positioned on the side of the light emitting layer.
摘要:
An ink composition particularly well suited for use in an ink jet printer wherein the ink is jetted at temperatures higher than room temperature. The ink composition includes a metallic complex solvent dye coloring material dispersed in a vehicle of at least one high molecular weight alkyl amine, at least one high molecular weight fatty acid and carnauba wax.
摘要:
An electronic device having an intermediate layer which can transfer smoothly carriers between two layers adjacent to the intermediate layer and having improved properties, and electronic equipment having high reliability are provided. An electronic device includes a pair of electrodes and laminated layers provided between the electrodes. The laminated layers include a hole transport layer (first organic semiconductor layer), a light emitting layer (second organic semiconductor layer), and an intermediate layer provided between the first and second organic semiconductor layers so as to make contact with both of the hole transport layer and the light emitting layer. The intermediate layer is constituted of a compound represented by a general formula A1-B-A2. In this formula, each of the A1 and A2 is a group including at least one of a primary amino group, a secondary amino group, a tertiary amino group, a hydroxyl group, a carbonyl group and a carboxyl group, the A1 and A2 are the same or different, and optionally simultaneously exist, and the B is a group including a fluorene ring. Molecules of the compound are oriented in a state that each group A1 and each group A2 are positioned on the side of the hole transport layer and each group B is positioned on the side of the light emitting layer.
摘要:
An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm−1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.
摘要:
A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R—X—O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom. Molecules of this compound (1) are oriented along a thickness direction of the intermediate layer in a state that each hydrocarbon group R is positioned on the side of the light emitting layer and each atom M is positioned on the side of the cathode.