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14 条记录 (耗时 0.015 秒)

    POWDERY PESTICIDAL COMPOSITION
    2.
    发明申请
    POWDERY PESTICIDAL COMPOSITION 有权
    粉末杀虫剂组合物

    公开(公告)号：US20100055143A1

    公开(公告)日：2010-03-04

    申请号：US12439701

    申请日：2007-09-10

    申请人： Takatoshi Terada ,  Manabu Tagami

    发明人： Takatoshi Terada ,  Manabu Tagami

    IPC分类号： A01N25/34 ,  A01N25/08 ,  A01P15/00

    CPC分类号： A01N25/12 ,  A01N25/08 ,  A01N25/26 ,  A01N43/40 ,  A01N43/56 ,  A01N51/00

    摘要： Disclosed is a powdery pesticidal composition which comprises a mixture of a coated pesticide comprising a powdery pesticide coated with a thermosetting resin and having a volume median diameter of 10 to 150 μm and a calcium carbonate micropowder having a bulk density of 0.6 g/ml or less, wherein the weight-based ratio of the coated pesticide to the calcium carbonate micropowder is 100:1 to 100:30. The powdery pesticidal composition has good fluidability.

    摘要翻译： 公开了一种粉状农药组合物，其包含涂覆的农药的混合物，其包含涂覆有热固性树脂的粉末状农药，体积中值粒径为10〜150μm，堆肥密度为0.6g / ml以下的碳酸钙微粉 其中涂覆的农药与碳酸钙微粉的重量比为100:1至100:30。 粉状杀虫剂组合物具有良好的流动性。

    Electrode unit for in-situ cleaning in thermal CVD apparatus
    6.
    发明授权
    Electrode unit for in-situ cleaning in thermal CVD apparatus 失效
    用于在热CVD装置中进行原位清洗的电极单元

    公开(公告)号：US5893962A

    公开(公告)日：1999-04-13

    申请号：US711204

    申请日：1996-09-09

    申请人： Shigeru Mizuno ,  Manabu Tagami ,  Takanori Yoshimura

    发明人： Shigeru Mizuno ,  Manabu Tagami ,  Takanori Yoshimura

    IPC分类号： H05H1/46 ,  C23C16/44 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  C23C16/00

    CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S156/916

    摘要： An electrode unit of a thermal CVD apparatus is used to generate plasma discharge for an in-situ cleaning process. The electrode unit is configured by a substrate holder and a shield member connected to a high frequency power supply, the gas supply section electrically grounded, and an auxiliary electrode disposed in the gas supply section. In a film deposition process, a reactive gas is supplied from the gas supply section, and the reactive gas is excited in a space in front of a substrate to deposit a thin film onto the substrate. In a periodical in-situ cleaning process, a cleaning gas is supplied from the gas supply section and a cleaning discharge is generated to remove unwanted films deposited on the substrate holder and the shield member. The auxiliary electrode causes the cleaning discharge to be concentrated in a space around unwanted films.

    摘要翻译： 热CVD装置的电极单元用于产生用于原位清洗工艺的等离子体放电。 电极单元由基板保持器和连接到高频电源的屏蔽构件构成，气体供给部电接地，以及设置在气体供给部中的辅助电极。 在成膜工序中，由气体供给部供给反应气体，在基板前方的空间内激发反应性气体，在基板上析出薄膜。 在周期性的原位清洗过程中，从气体供应部分提供清洁气体，并且产生清洁排放物以去除沉积在基板保持器和屏蔽构件上的不需要的膜。 辅助电极使得清洁放电集中在不期望的膜周围的空间中。

    Pesticidal aqueous suspension
    7.
    发明授权
    Pesticidal aqueous suspension 失效
    农药含水悬浮液

    公开(公告)号：US4324781A

    公开(公告)日：1982-04-13

    申请号：US74371

    申请日：1979-09-10

    申请人： Yukikazu Okamoto ,  Manabu Tagami

    发明人： Yukikazu Okamoto ,  Manabu Tagami

    IPC分类号： A01N25/04 ,  A01N25/30 ,  A01N47/20 ,  A01N47/22 ,  A01N47/24 ,  A01N37/00 ,  A01N43/08 ,  A01N47/10 ,  A01N61/02

    CPC分类号： A01N47/20 ,  A01N25/04 ,  A01N47/22 ,  A01N47/24 ,  Y10S514/941 ,  Y10S514/943

    摘要： A pesticidal aqueous suspension having an excellent dispersion stability, which comprises, as a pesticidally active ingredient, an N-methyl- or N-phenylcarbamate which is solid and has a solubility in water of about 10 to 10,000 ppm at room temperature, suspended in water in a finely dispersed state with a surfactant having a hydrophilelipophile balance (HLB) less than 5 and polyvinyl alcohol having a degree of hydrolysis of about 70 to 90 mol % and a degree of polymerization of about 300 to 2,600 as dispersing agents in the presence of ethylene glycol and liquid paraffin as dispersion stabilizers.

    摘要翻译： 具有优异分散稳定性的农药水性悬浮液，其包含作为杀虫活性成分的固体并在室温下具有约10至10,000ppm的水溶性的N-甲基 - 或N-苯基氨基甲酸酯，悬浮于水中 在具有亲水亲油平衡（HLB）小于5的表面活性剂和水解度为约70至90摩尔％的聚乙烯醇和聚合度为约300至2600的细分散状态下，作为分散剂，在存在 乙二醇和液体石蜡作为分散稳定剂。

    Thin film fabrication method and thin film fabrication apparatus
    8.
    发明授权
    Thin film fabrication method and thin film fabrication apparatus 有权
    薄膜制造方法和薄膜制造装置

    公开(公告)号：US06348238B1

    公开(公告)日：2002-02-19

    申请号：US09453883

    申请日：2000-02-15

    申请人： Shigeru Mizuno ,  Makoto Satou ,  Manabu Tagami ,  Hideki Satou

    发明人： Shigeru Mizuno ,  Makoto Satou ,  Manabu Tagami ,  Hideki Satou

    IPC分类号： C23C1432

    CPC分类号： H01J37/32706 ,  C23C14/354 ,  H01J37/3405

    摘要： A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.

    摘要翻译： 制造薄膜，同时使等离子体P中的离子通过相对于等离子体P的空间电位施加偏置而入射，通过给基板9的表面赋予设定电位。偏置系统6使基板表面电位Vs 通过在介质块22中的偏置电极23上施加脉冲形式的电极施加的电压Ve来改变脉冲形式。脉冲频率低于等离子体P中的离子的振荡频率，脉冲周期T， 脉冲宽度t和脉冲高度h由控制部分62以使得离子的入射被优化的方式控制。 施加的脉冲以使得在脉冲周期T结束时基板表面电位Vs恢复到浮动电位Vf的方式被控制，并且离子入射能量在脉冲周期T中暂时跨越薄膜溅射阈值。

    CVD apparatus
    10.
    发明授权
    CVD apparatus 失效
    CVD装置

    公开(公告)号：US5624499A

    公开(公告)日：1997-04-29

    申请号：US634676

    申请日：1996-04-18

    申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Manabu Tagami ,  Hajime Sahase ,  Nobuyuki Takahashi

    发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Manabu Tagami ,  Hajime Sahase ,  Nobuyuki Takahashi

    IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/4583

    摘要： A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform.

    摘要翻译： CVD装置配备有反应器，基板保持器，排气部，反应气体供给机构，用于加热基板保持件的加热机构，用于夹持基板的差压卡盘夹持部，以及用于 供应吹扫气体。 衬底保持器构造成在其顶表面上具有圆形吹扫气体吹送通道，其中外壁表面的直径小于衬底的直径，并且在其内部具有多个吹扫气体通道， 其中的每一个将净化气体供应到净化气体吹送通道中。 通过吹扫气体吹送通道的净化气体通过衬底的外周和衬底保持器之间的间隙被吹出。 吹扫气体通道包括朝向衬底保持器的半径方向的半径指向部分，并且具有设置在吹扫气体吹送通道的外壁表面上的吹扫气体出口。 净化气体吹送通道内的吹扫气体在圆周方向上的流动是湍流和分散的，因此衬底整个周边的吹扫气体吹出压力是均匀的。