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1.发明授权Method of depositing thin films by plasma-enhanced chemical vapor deposition 失效通过等离子体增强化学气相沉积法沉积薄膜的方法
公开(公告)号：US5956616A
公开(公告)日：1999-09-21
申请号：US863298
申请日：1997-05-27
申请人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Manabu Tagami , Shinya Hasegawa , Yoichiro Numasawa , Masahito Ishihara , Kiyoshi Nashimoto , Nobuyuki Takahashi
IPC分类号： C23C16/34 , C23C16/42 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556
摘要： A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.
摘要翻译： 提供了通过等离子体增强CVD在衬底上沉积薄膜的方法。 该方法包括将H2或H2和N2引入等离子体增强型CVD反应器中; 在反应器中产生等离子体; 将包含TiCl 4，硅烷，以及H 2或H 2和N 2的反应气体引入反应器中; 并在反应器中在衬底上沉积含有Si的Ti膜或TiN膜。
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公开(公告)号：US6070552A
公开(公告)日：2000-06-06
申请号：US022880
申请日：1998-02-12
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/4412 , C23C16/455 , C23C16/45519 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32834 , H01J37/32862
摘要： A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.
摘要翻译： 基板处理装置包括装备有基板保持器和面向基板保持器的气体供给电极的反应器，用于泵出反应器内部的泵机构，用于将反应气体通过气体供给电极引入的反应气体供给机构 所述反应器的内部，用于向所述气体供给电极施加高频电力的高频电源，形成在所述反应器的侧壁中的连接端口，所述泵机构连接到形成在所述反应器的侧壁中的连接端口 并且设置气体供给电极和衬底保持器之间的空间，使得气体供给电极和衬底保持器之间的电导低于反应器的侧壁和气体馈送电极之间的电导。
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公开(公告)号：US6059985A
公开(公告)日：2000-05-09
申请号：US826735
申请日：1997-04-04
IPC分类号： H01L21/28 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/68
CPC分类号： H01L21/0209
摘要： A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.
摘要翻译： 处理基板的方法具有以下处理。 在通过CVD法将薄膜沉积到基板上之后，使基板的前表面靠近气体供给机构的气体供给表面，使其具有期望的间隔而不会在前表面和气体供给表面之间接触。 然后，将蚀刻气体供给到基板的后部空间中以在其中产生等离子体，并且还将吹扫气体供应到气体供给表面和基板之间的空间中，使得净化气体通过 衬底的周边边缘区域。 这种净化气体防止包括在等离子体中的自由基扩散到气体供应表面和基底之间的空间中。
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公开(公告)号：US5624499A
公开(公告)日：1997-04-29
申请号：US634676
申请日：1996-04-18
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4583
摘要： A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform.
摘要翻译： CVD装置配备有反应器，基板保持器，排气部，反应气体供给机构，用于加热基板保持件的加热机构，用于夹持基板的差压卡盘夹持部，以及用于 供应吹扫气体。 衬底保持器构造成在其顶表面上具有圆形吹扫气体吹送通道，其中外壁表面的直径小于衬底的直径，并且在其内部具有多个吹扫气体通道， 其中的每一个将净化气体供应到净化气体吹送通道中。 通过吹扫气体吹送通道的净化气体通过衬底的外周和衬底保持器之间的间隙被吹出。 吹扫气体通道包括朝向衬底保持器的半径方向的半径指向部分，并且具有设置在吹扫气体吹送通道的外壁表面上的吹扫气体出口。 净化气体吹送通道内的吹扫气体在圆周方向上的流动是湍流和分散的，因此衬底整个周边的吹扫气体吹出压力是均匀的。
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公开(公告)号：US5676758A
公开(公告)日：1997-10-14
申请号：US635492
申请日：1996-04-22
申请人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
发明人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/45568 , C23C16/45591 , C23C16/4583 , C23C16/509 , H01J37/3244
摘要： A CVD mechanism includes a reactor, a substrate holder, a heating apparatus for heating the substrate holder, a reaction gas supply plate for supplying reaction gas into the reactor, and at least two cylinders disposed in a concentric form on the substrate-facing surface of the reaction gas supply plate so that reaction gas is supplied from an inward portion of each cylinder in the reaction gas supply plate. A power supply mechanism for supplying power to the reaction gas supply plate and the substrate holder, and ring magnets disposed in the upper and lower portions of the reactor are provided so that magnetic lines of force passing through a plasma space are generated by the facing magnetic pole parts of the respective magnets.
摘要翻译： CVD机构包括反应器，基板保持器，用于加热基板保持器的加热装置，用于将反应气体供应到反应器中的反应气体供给板，以及至少两个以同心形式设置在圆筒形基板的表面的基板 反应气体供给板，使得反应气体从反应气体供给板中的每个气缸的向内部分供给。 设置用于向反应气体供给板和基板保持器供电的供电机构和设置在电抗器的上部和下部的环形磁铁，使得通过等离子体空间的磁力线由面对的磁体 各个磁体的极部分。
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公开(公告)号：US6129046A
公开(公告)日：2000-10-10
申请号：US795348
申请日：1997-02-04
IPC分类号： C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23F4/00 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/324 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/4586
摘要： The present invention provides a substrate processing apparatus having improved temperature distribution on a block heater and improved productivity. The substrate processing apparatus includes a reactor having an exhaust unit to form a vacuum environment therein for processing a surface of a substrate, a support member provided in the reactor, and gas introduction units for introducing reactive gases into the reactor, the substrate support member including a block heater. The block heater has upper, intermediate and lower members, which are placed one over another, the faying surfaces of the respective members being joined by diffusion bonding. A heating member is provided between the intermediate and lower members, and purge gas passages are formed between the intermediate and upper members.
摘要翻译： 本发明提供一种具有改进的块加热器温度分布和提高生产率的基板处理装置。 基板处理装置包括具有排气单元的反应器，用于在其中形成用于处理基板的表面的真空环境，设置在反应器中的支撑构件和用于将反应气体引入反应器的气体引入单元，所述基板支撑构件包括 一个块加热器。 块式加热器具有一个上下放置的上部，中间和下部构件，各个构件的接合表面通过扩散接合连接。 加热构件设置在中间构件和下构件之间，并且在中间构件和上构件之间形成吹扫气体通道。
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公开(公告)号：US5893962A
公开(公告)日：1999-04-13
申请号：US711204
申请日：1996-09-09
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/304 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S156/916
摘要： An electrode unit of a thermal CVD apparatus is used to generate plasma discharge for an in-situ cleaning process. The electrode unit is configured by a substrate holder and a shield member connected to a high frequency power supply, the gas supply section electrically grounded, and an auxiliary electrode disposed in the gas supply section. In a film deposition process, a reactive gas is supplied from the gas supply section, and the reactive gas is excited in a space in front of a substrate to deposit a thin film onto the substrate. In a periodical in-situ cleaning process, a cleaning gas is supplied from the gas supply section and a cleaning discharge is generated to remove unwanted films deposited on the substrate holder and the shield member. The auxiliary electrode causes the cleaning discharge to be concentrated in a space around unwanted films.
摘要翻译： 热CVD装置的电极单元用于产生用于原位清洗工艺的等离子体放电。 电极单元由基板保持器和连接到高频电源的屏蔽构件构成，气体供给部电接地，以及设置在气体供给部中的辅助电极。 在成膜工序中，由气体供给部供给反应气体，在基板前方的空间内激发反应性气体，在基板上析出薄膜。 在周期性的原位清洗过程中，从气体供应部分提供清洁气体，并且产生清洁排放物以去除沉积在基板保持器和屏蔽构件上的不需要的膜。 辅助电极使得清洁放电集中在不期望的膜周围的空间中。
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公开(公告)号：US06872289B2
公开(公告)日：2005-03-29
申请号：US09799609
申请日：2001-03-07
申请人： Shigeru Mizuno , Makoto Satou , Manabu Tagami , Hideki Satou
发明人： Shigeru Mizuno , Makoto Satou , Manabu Tagami , Hideki Satou
CPC分类号： H01J37/32706 , C23C14/354 , H01J37/3405
摘要： A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.
摘要翻译： 制造薄膜，同时使等离子体P中的离子通过相对于等离子体P的空间电位施加偏置而入射，通过赋予衬底9的表面设定电位。偏置系统6使衬底表面电位Vs 通过在介质块22中的偏置电极23上施加脉冲形式的电极施加的电压Ve来改变脉冲形式。脉冲频率低于等离子体P中的离子的振荡频率，脉冲周期T， 脉冲宽度t和脉冲高度h由控制部分62以使得离子的入射被优化的方式控制。 施加的脉冲以使得在脉冲周期T结束时基板表面电位Vs恢复到浮动电位Vf的方式被控制，并且离子入射能量在脉冲周期T中暂时跨越薄膜溅射阈值。
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公开(公告)号：US20090122459A1
公开(公告)日：2009-05-14
申请号：US12318488
申请日：2008-12-30
IPC分类号： H01L21/683
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.
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公开(公告)号：US06348238B1
公开(公告)日：2002-02-19
申请号：US09453883
申请日：2000-02-15
申请人： Shigeru Mizuno , Makoto Satou , Manabu Tagami , Hideki Satou
发明人： Shigeru Mizuno , Makoto Satou , Manabu Tagami , Hideki Satou
IPC分类号： C23C1432
CPC分类号： H01J37/32706 , C23C14/354 , H01J37/3405
摘要： A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.
摘要翻译： 制造薄膜，同时使等离子体P中的离子通过相对于等离子体P的空间电位施加偏置而入射，通过给基板9的表面赋予设定电位。偏置系统6使基板表面电位Vs 通过在介质块22中的偏置电极23上施加脉冲形式的电极施加的电压Ve来改变脉冲形式。脉冲频率低于等离子体P中的离子的振荡频率，脉冲周期T， 脉冲宽度t和脉冲高度h由控制部分62以使得离子的入射被优化的方式控制。 施加的脉冲以使得在脉冲周期T结束时基板表面电位Vs恢复到浮动电位Vf的方式被控制，并且离子入射能量在脉冲周期T中暂时跨越薄膜溅射阈值。
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