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    Low temperature method for synthesizing diamond with high quality by vapor phase deposition
    1.
    发明授权
    Low temperature method for synthesizing diamond with high quality by vapor phase deposition 失效
    通过气相沉积合成高品质金刚石的低温方法

    公开(公告)号：US5391409A

    公开(公告)日：1995-02-21

    申请号：US861540

    申请日：1992-04-01

    申请人： Takayuki Shibata ,  Nobuhiro Ota ,  Naoji Fujimori

    发明人： Takayuki Shibata ,  Nobuhiro Ota ,  Naoji Fujimori

    IPC分类号： C30B25/16 ,  C23C16/27 ,  C30B25/10 ,  C30B29/04 ,  B05D3/06 ,  C23C16/26

    CPC分类号： C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  Y10S427/106

    摘要： A diamond film deposited on a substrate heated at less than 400.degree. C. in vapor phase from material gas including hydrogen gas and hydrocarbon gas often incurs low strength, low abrasion resistance, and opacity owing to high concentration of non-diamond ingredients. The inventors have discovered that inclusion of nitrogen gas in material gas is likely to raise the concentration of non-diamond ingredients. Good diamond film of good quality shall be obtained by synthesizing from the material gas in which the nitrogen concentration is less than 1000 ppm. The smaller the nitrogen concentration is suppressed, the higher the quality of diamond rises.

    摘要翻译： 由于高浓度的非金刚石成分，沉积在包含氢气和碳氢化合物气体的材料气体中在气相中加热到低于400℃的基体上的金刚石膜通常会产生低强度，低耐磨性和不透明度。 发明人已经发现，在原料气体中包含氮气有可能提高非金刚石成分的浓度。 通过从氮浓度小于1000ppm的原料气体合成，可获得质量好的金刚石薄膜。 氮浓度越低，钻石质量越高。

    Chemical vapor deposition method of high quality diamond
    2.
    发明授权
    Chemical vapor deposition method of high quality diamond 失效
    高品质钻石的化学气相沉积方法

    公开(公告)号：US6162412A

    公开(公告)日：2000-12-19

    申请号：US115783

    申请日：1993-09-03

    申请人： Naoji Fujimori ,  Akihiko Ikegaya ,  Takahiro Imai ,  Nobuhiro Ota ,  Takayuki Shibata

    发明人： Naoji Fujimori ,  Akihiko Ikegaya ,  Takahiro Imai ,  Nobuhiro Ota ,  Takayuki Shibata

    IPC分类号： C23C16/27

    CPC分类号： C23C16/277 ,  C23C16/271

    摘要： Diamond having a large coefficient of thermal conductivity is prepared by a CVD method in which a reaction gas is decomposed and reacted under such condition that a concentration of carbon atoms in relation to hydrogen gas (A %), a concentration of nitrogen gas in relation to the whole reaction gas (B ppm) and a concentration of oxygen atoms in relation to the hydrogen gas (C %) satisfy the equation:.alpha.=B.times.(A-1.2C) (I)provided that a is not larger than 13, or B is not larger than 20.

    摘要翻译： 通过CVD法制备具有大的导热系数的金刚石，其中反应气体在相对于氢气（A％）的碳原子浓度，氮气浓度相对于 整个反应气体（B ppm）和氧原子相对于氢气的浓度（C％）满足以下等式：α= Bx（A-1.2C）（I），条件是a不大于13，或 B不大于20。

    Diamond synthesizing method
    3.
    发明授权
    Diamond synthesizing method 失效
    金刚石合成方法

    公开(公告)号：US5201986A

    公开(公告)日：1993-04-13

    申请号：US739995

    申请日：1991-08-02

    申请人： Nobuhiro Ota ,  Naoji Fujimori ,  Takayuki Shibata

    发明人： Nobuhiro Ota ,  Naoji Fujimori ,  Takayuki Shibata

    IPC分类号： C23C16/27 ,  C23C16/52

    CPC分类号： C23C16/272 ,  C23C16/52

    摘要： A diamond synthesizing method introduces a mixed gas of hydrocarbon gas and hydrogen gas into a reaction vessel (9) which is maintained under a pressure of 1 to 100 Torr. A dc discharge is caused across a cathode (1) and an anode (2), thereby depositing diamond on a substrate (3) which is placed on the anode (2). A positive column of H.alpha.>CH is produced with a high formation rate of atomic hydrogen for promoting decomposition of the hydrocarbon gas, and the concentration of hydrocarbon is reduced while maintaining the condition. According to this method, it is possible to synthesize high-quality diamond, which hardly any non-diamond carbon components such as amorphous carbon and graphite, at a film forming rate of about 1 .mu.m/h.

    Method of and apparatus for synthesizing hard material
    4.
    发明授权
    Method of and apparatus for synthesizing hard material 失效
    用于合成硬质材料的方法和装置

    公开(公告)号：US5242663A

    公开(公告)日：1993-09-07

    申请号：US584912

    申请日：1990-09-18

    申请人： Hiromu Shiomi ,  Naoji Fujimori ,  Nobuhiro Ota ,  Takahiro Imai

    发明人： Hiromu Shiomi ,  Naoji Fujimori ,  Nobuhiro Ota ,  Takahiro Imai

    IPC分类号： C23C16/27 ,  C23C16/34 ,  C23C16/511

    CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/342 ,  C23C16/511

    摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

    Diamond synthesizing apparatus
    10.
    发明授权
    Diamond synthesizing apparatus 失效
    金刚石合成装置

    公开(公告)号：US5074245A

    公开(公告)日：1991-12-24

    申请号：US584911

    申请日：1990-09-18

    申请人： Nobuhiro Ota ,  Naoji Fujimori

    发明人： Nobuhiro Ota ,  Naoji Fujimori

    IPC分类号： C23C16/27 ,  C23C16/511

    CPC分类号： C23C16/511 ,  C23C16/27

    摘要： A diamond synthesizing apparatus has a reaction tube for internally causing a reaction for vapor-phase synthesizing diamond. A plasma generator produces the required microwave plasma in the reaction tube. The reaction tube is coupled with a gas reservoir, which forms a circulation system with the reaction tube. The circulation system is connectable to an exhaust for evacuating its interior. This circulation system further includes a pump for circulating raw material gas, which is a compound containing carbon. A raw material gas supply is also connectable to the circulation system, for intermittently supplying the raw material gas into the circulation system. During the synthesizing operation the circulation system is completely closed. According to this diamond synthesizing apparatus, it is possible to keep pressure fluctuations and composition fluctuations following a reaction and gas addition, to the minimum and to vapor-phase synthesize diamond in very restricted ranges of gas composition and pressure. Further, the consumption of the raw material gas is substantially reduced and the gas concentration in the reaction tube changes only very slowly and smoothly in gas supply, thus, an adverse influence caused by changes in the gas concentration on the film quality, is substantially eliminated.