公开(公告)号：US6143190A

公开(公告)日：2000-11-07

申请号：US967732

申请日：1997-11-12

申请人： Takayuki Yagi ,  Junichi Kobayashi ,  Yasushi Kawasumi ,  Genzo Momma ,  Kenji Makino ,  Kei Fujita ,  Yasushi Matsuno ,  Yukihiro Hayakawa ,  Masahiro Takizawa

发明人： Takayuki Yagi ,  Junichi Kobayashi ,  Yasushi Kawasumi ,  Genzo Momma ,  Kenji Makino ,  Kei Fujita ,  Yasushi Matsuno ,  Yukihiro Hayakawa ,  Masahiro Takizawa

IPC分类号： B41J2/05 ,  B41J2/16 ,  B81B3/00 ,  B81C1/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/38 ,  G01Q70/16 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  B44C1/22

CPC分类号： B81C1/00087 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/13 ,  B81B2201/052

摘要： The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

摘要翻译： 本发明提供一种制造通孔的方法，用于制造通孔的基板，具有通孔的基板以及使用这种通孔的装置或具有这种通孔的基板，其中 其特征在于：只能通过从其背面蚀刻硅衬底来制造通孔; 无论硅晶片厚度和取向平面角度的变化如何，也可以将开口长度d精确地控制到期望值，并且不管所采用的取决于硅晶体取向的各向异性蚀刻剂的类型如何; 可以实现高生产率，高生产重现性和易生产性; 即使长时间在高温下进行温度处理，也可以在开口形状中实现高自由度; 并且可以产生高精度通孔，而不管形成在基板表面上的器件的形状如何。

公开(公告)号：US5580822A

公开(公告)日：1996-12-03

申请号：US449748

申请日：1995-05-25

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  H01L21/44

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452 ,  Y10S438/935

摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

摘要翻译： 一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

公开(公告)号：US06475563B2

公开(公告)日：2002-11-05

申请号：US09433565

申请日：1999-11-04

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16455

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452

摘要： A method for forming a thin film on a substrate using a gas includes providing a substrate in a reaction chamber. A head for emitting a gas in the reaction chamber is disposed opposite the substrate. This step includes mounting a detachable gas liberating surface to the head so that the distance between the head and the substrate surface is 10 mm or less. Gas is then emitted from the head into the reaction chamber.

摘要翻译： 使用气体在基板上形成薄膜的方法包括在反应室中设置基板。 用于在反应室中排出气体的头部设置在与衬底相对的位置。 该步骤包括将可拆卸的气体释放表面安装到头部上，使得头部和基底表面之间的距离为10mm或更小。 然后将气体从头部排出到反应室中。

公开(公告)号：US6004885A

公开(公告)日：1999-12-21

申请号：US675537

申请日：1996-07-03

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  C23C16/06

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452

摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

摘要翻译： 一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

公开(公告)号：US5447568A

公开(公告)日：1995-09-05

申请号：US995039

申请日：1992-12-22

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  H01L21/20

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452 ,  Y10S438/935

摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

摘要翻译： 一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

公开(公告)号：US6156657A

公开(公告)日：2000-12-05

申请号：US637410

申请日：1996-04-25

申请人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

发明人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

IPC分类号： B01D53/72 ,  C23C16/44 ,  H01J37/32 ,  H01L21/44

CPC分类号： H01J37/3244 ,  B01D53/72 ,  C23C16/4412 ,  H01J37/32844 ,  Y02C20/30

摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

摘要翻译： 活性物质处理方法的特征在于使活性物质与用于薄膜形成装置的排气系统中的灭活物质反应。 薄膜形成装置包括具有进行等离子体CVD的区域和进行热CVD的区域的公共室，设置在用于将基板按压到保持器上的室中的装置，用于照射具有成分 波长1μm以上的加热用基板，将两个活性物质分别引入到基板附近的引入口，将至少两个起泡器串联连接以蒸发活性物质的汽化装置，以及 排气系统，其被分成两个系统，每个系统具有加热器，并且具有用于将灭活物质引入排气泵的端口。

公开(公告)号：US5534069A

公开(公告)日：1996-07-09

申请号：US92782

申请日：1993-07-19

申请人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

发明人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

IPC分类号： B01D53/72 ,  C23C16/44 ,  H01J37/32 ,  C23C16/18 ,  C23C16/46 ,  C23C16/48

CPC分类号： H01J37/3244 ,  B01D53/72 ,  C23C16/4412 ,  H01J37/32844 ,  Y02C20/30

摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

公开(公告)号：US5569614A

公开(公告)日：1996-10-29

申请号：US435834

申请日：1995-05-05

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/265

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US5963812A

公开(公告)日：1999-10-05

申请号：US814016

申请日：1997-03-10

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/336

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US5580808A

公开(公告)日：1996-12-03

申请号：US327799

申请日：1994-10-24

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/265

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

摘要翻译： 一种通过首先在半导体内形成接触孔来制造掩模ROM的方法。 然后施加表面处理以将氢原子供给到半导体的表面。 用能量束选择性地照射接触孔，以产生照射的接触孔和未照射的接触孔。 在未经照射的接触孔中，形成导电或半导体薄膜，并在导电或半导体薄膜上形成电路。 电路和未照射的孔彼此连接，并且照射的孔和电路彼此绝缘。