公开(公告)号：US5569614A

公开(公告)日：1996-10-29

申请号：US435834

申请日：1995-05-05

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/265

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US5963812A

公开(公告)日：1999-10-05

申请号：US814016

申请日：1997-03-10

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/336

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US5580808A

公开(公告)日：1996-12-03

申请号：US327799

申请日：1994-10-24

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/265

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

摘要翻译： 一种通过首先在半导体内形成接触孔来制造掩模ROM的方法。 然后施加表面处理以将氢原子供给到半导体的表面。 用能量束选择性地照射接触孔，以产生照射的接触孔和未照射的接触孔。 在未经照射的接触孔中，形成导电或半导体薄膜，并在导电或半导体薄膜上形成电路。 电路和未照射的孔彼此连接，并且照射的孔和电路彼此绝缘。

公开(公告)号：US5527730A

公开(公告)日：1996-06-18

申请号：US425081

申请日：1995-04-19

申请人： Yuzo Kayaoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kayaoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US6156657A

公开(公告)日：2000-12-05

申请号：US637410

申请日：1996-04-25

申请人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

发明人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

IPC分类号： B01D53/72 ,  C23C16/44 ,  H01J37/32 ,  H01L21/44

CPC分类号： H01J37/3244 ,  B01D53/72 ,  C23C16/4412 ,  H01J37/32844 ,  Y02C20/30

摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

摘要翻译： 活性物质处理方法的特征在于使活性物质与用于薄膜形成装置的排气系统中的灭活物质反应。 薄膜形成装置包括具有进行等离子体CVD的区域和进行热CVD的区域的公共室，设置在用于将基板按压到保持器上的室中的装置，用于照射具有成分 波长1μm以上的加热用基板，将两个活性物质分别引入到基板附近的引入口，将至少两个起泡器串联连接以蒸发活性物质的汽化装置，以及 排气系统，其被分成两个系统，每个系统具有加热器，并且具有用于将灭活物质引入排气泵的端口。

公开(公告)号：US5534069A

公开(公告)日：1996-07-09

申请号：US92782

申请日：1993-07-19

申请人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

发明人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

IPC分类号： B01D53/72 ,  C23C16/44 ,  H01J37/32 ,  C23C16/18 ,  C23C16/46 ,  C23C16/48

CPC分类号： H01J37/3244 ,  B01D53/72 ,  C23C16/4412 ,  H01J37/32844 ,  Y02C20/30

摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

公开(公告)号：US5975685A

公开(公告)日：1999-11-02

申请号：US990919

申请日：1997-12-15

申请人： Tetsuo Asaba ,  Shigeyuki Matsumoto ,  Hideshi Kuwabara

发明人： Tetsuo Asaba ,  Shigeyuki Matsumoto ,  Hideshi Kuwabara

IPC分类号： B41J2/04 ,  B41J2/14 ,  B41J2/05

CPC分类号： B41J2/04 ,  B41J2/14072 ,  B41J2/14129 ,  B41J2002/041 ,  B41J2202/13

摘要： An ink jet head provided with discharging orifices for discharging ink, which includes a substrate having a supporting member having at least a surface having substantially insulating properties and a plurality of diodes provided on the supporting member, the diodes each comprising a polycrystalline silicon layer and at least one metal silicide layer, wherein the polycrystalline silicon layer has a p-n junction surface therein.

摘要翻译： 一种喷墨头，其具有用于排出墨的排出口，该喷墨头包括具有至少具有基本上绝缘性的表面的支撑构件的基板和设置在该支撑构件上的多个二极管，所述二极管各自包括多晶硅层， 至少一个金属硅化物层，其中所述多晶硅层在其中具有pn结表面。

公开(公告)号：US5610435A

公开(公告)日：1997-03-11

申请号：US668369

申请日：1996-06-18

申请人： Hidenori Watanabe ,  Junichi Hoshi ,  Yutaka Yuge ,  Akira Okita ,  Hideshi Kuwabara

发明人： Hidenori Watanabe ,  Junichi Hoshi ,  Yutaka Yuge ,  Akira Okita ,  Hideshi Kuwabara

IPC分类号： H01L21/316 ,  H01L21/331 ,  H01L27/092 ,  H01L29/08 ,  H01L29/73 ,  H01L29/732 ,  H01L27/00 ,  H01L27/08

CPC分类号： H01L27/0927 ,  H01L29/0895 ,  H01L29/66272 ,  H01L29/7311

摘要： A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type different from the first conductive type, comprises, for the purpose of preventing depletion of the surface of the control electrode area and suppressing or annulating the current generated in the surfacial depletion area, an electrode for controlling the surface state of the control electrode area, positioned, across an insulation film, on the surface of the control electrode area including the vicinity of the junction between the control electrode area and the above-mentioned first main electrode area.

摘要翻译： 具有第一导电类型的半导体的控制电极面积和与控制电极区域接触并由不同于第一导电类型的第二导电类型的半导体构成的第一和第二主电极区域的双极晶体管包括 为了防止控制电极区域的表面的耗尽，并且抑制或排除在表面耗尽区域中产生的电流，用于控制控制电极区域的表面状态的电极跨越绝缘膜定位在 控制电极区域的表面包括控制电极区域和上述第一主电极区域之间的接合点附近。

公开(公告)号：US20050056905A1

公开(公告)日：2005-03-17

申请号：US10937382

申请日：2004-09-10

申请人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

发明人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

IPC分类号： H01L27/146 ,  H01L29/732 ,  H01L31/10

CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/14632

摘要： In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled. In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.

摘要翻译： 在具有在阳极的一部分中的掩埋层和具有传感器结构的CCD的诸如CCD的CMOS光电二极管的光电转换装置中，与掩埋层的导电类型相同的导电类型 设置在外围电路中，并且每个阱的电位被独立地控制。 在以这样的方式构成的光电转换装置中，在特定导电类型的基板的整个区域上设置有与基板的导电类型相反的导电类型的掩埋层和与其相同的外延层 导电类型作为衬底的导电类型，并且与衬底的导电类型相反的导电类型的阱存在于外延层的一部分中，用于良好隔离导电类型的导电类型的掩埋层 具有比外延层更高的浓度的衬底设置在阱的下部和掩埋层之间。

公开(公告)号：US07247899B2

公开(公告)日：2007-07-24

申请号：US10937382

申请日：2004-09-10

申请人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

发明人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/14632

摘要： In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.

摘要翻译： 在具有在阳极的一部分中的掩埋层和具有传感器结构的CCD的诸如CCD的CMOS光电二极管的光电转换装置中，与掩埋层的导电类型相同的导电类型 设置在外围电路中，并且每个阱的电位被独立地控制。 在以这样的方式构成的光电转换装置中，在特定导电类型的基板的整个区域上设置有与基板的导电类型相反的导电类型的掩埋层和与其相同的外延层 导电类型作为衬底的导电类型，并且与衬底的导电类型相反的导电类型的阱存在于外延层的一部分中，用于良好隔离导电类型的导电类型的掩埋层 具有比外延层更高的浓度的衬底设置在阱的下部和掩埋层之间。