公开(公告)号：US6156657A

公开(公告)日：2000-12-05

申请号：US637410

申请日：1996-04-25

申请人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

发明人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

IPC分类号： B01D53/72 ,  C23C16/44 ,  H01J37/32 ,  H01L21/44

CPC分类号： H01J37/3244 ,  B01D53/72 ,  C23C16/4412 ,  H01J37/32844 ,  Y02C20/30

摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

摘要翻译： 活性物质处理方法的特征在于使活性物质与用于薄膜形成装置的排气系统中的灭活物质反应。 薄膜形成装置包括具有进行等离子体CVD的区域和进行热CVD的区域的公共室，设置在用于将基板按压到保持器上的室中的装置，用于照射具有成分 波长1μm以上的加热用基板，将两个活性物质分别引入到基板附近的引入口，将至少两个起泡器串联连接以蒸发活性物质的汽化装置，以及 排气系统，其被分成两个系统，每个系统具有加热器，并且具有用于将灭活物质引入排气泵的端口。

公开(公告)号：US5534069A

公开(公告)日：1996-07-09

申请号：US92782

申请日：1993-07-19

申请人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

发明人： Hideshi Kuwabara ,  Yasushi Kawasumi ,  Tetsuo Asaba ,  Kenji Makino ,  Yuzo Kataoka ,  Yasuhiro Sekine ,  Shigeru Nishimura

IPC分类号： B01D53/72 ,  C23C16/44 ,  H01J37/32 ,  C23C16/18 ,  C23C16/46 ,  C23C16/48

CPC分类号： H01J37/3244 ,  B01D53/72 ,  C23C16/4412 ,  H01J37/32844 ,  Y02C20/30

摘要： An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

公开(公告)号：US5776255A

公开(公告)日：1998-07-07

申请号：US675843

申请日：1996-07-05

申请人： Tetsuo Asaba ,  Yasushi Kawasumi ,  Kazuaki Ohmi ,  Yasuhiro Sekine ,  Yukihiro Hayakawa

发明人： Tetsuo Asaba ,  Yasushi Kawasumi ,  Kazuaki Ohmi ,  Yasuhiro Sekine ,  Yukihiro Hayakawa

IPC分类号： H01L21/205 ,  C23C16/04 ,  C23C16/20 ,  C23C16/448 ,  H01L21/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/3205 ,  H01L23/52 ,  C23C16/00

CPC分类号： C23C16/4487 ,  C23C16/045 ,  C23C16/20 ,  C23C16/4482 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28562 ,  Y10S261/65

摘要： A chemical vapor deposition apparatus comprises a starting material container holding a starting material in a liquid state, a starting gas generating container into which the liquid starting material is fed from the starting material container, a means for keeping constant the liquid level of the liquid starting material held in the starting gas generating container, a means for injecting a bubbling gas from the outside into the liquid starting material held in the starting gas generating container, thereby bubbling the starting gas, and a reaction chamber into which a mixed gas of the starting gas and the bubbling gas are fed.

摘要翻译： 一种化学气相沉积装置，包括：保持液态原料的原料容器，从原料容器供给液体原料的起始气体发生容器，起始液体的液面保持恒定的装置; 保持在起动气体发生容器中的材料，用于将起泡气体从外部喷射到保持在起始气体发生容器中的液体起始材料中，从而使起始气体起泡的装置，以及起动气体的混合气体的反应室 气体和鼓泡气体进料。

公开(公告)号：US5580822A

公开(公告)日：1996-12-03

申请号：US449748

申请日：1995-05-25

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  H01L21/44

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452 ,  Y10S438/935

摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

摘要翻译： 一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

公开(公告)号：US06475563B2

公开(公告)日：2002-11-05

申请号：US09433565

申请日：1999-11-04

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16455

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452

摘要： A method for forming a thin film on a substrate using a gas includes providing a substrate in a reaction chamber. A head for emitting a gas in the reaction chamber is disposed opposite the substrate. This step includes mounting a detachable gas liberating surface to the head so that the distance between the head and the substrate surface is 10 mm or less. Gas is then emitted from the head into the reaction chamber.

摘要翻译： 使用气体在基板上形成薄膜的方法包括在反应室中设置基板。 用于在反应室中排出气体的头部设置在与衬底相对的位置。 该步骤包括将可拆卸的气体释放表面安装到头部上，使得头部和基底表面之间的距离为10mm或更小。 然后将气体从头部排出到反应室中。

公开(公告)号：US6004885A

公开(公告)日：1999-12-21

申请号：US675537

申请日：1996-07-03

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  C23C16/06

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452

摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

摘要翻译： 一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

公开(公告)号：US5447568A

公开(公告)日：1995-09-05

申请号：US995039

申请日：1992-12-22

申请人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

发明人： Yukihiro Hayakawa ,  Yasushi Kawasumi ,  Kenji Makino ,  Yuzo Kataoka

IPC分类号： C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  H01L21/20

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/452 ,  Y10S438/935

摘要： A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

摘要翻译： 一种起始气体供给装置，用于从液体原料形成气态起始材料并将气态原料进料到CVD设备的反应室中; 容纳液体原料的容器，用于降低容器内的压力的减压装置，以及加热保持在容器内的液体起始材料的加热装置; 液体起始材料被煮沸。

公开(公告)号：US6143190A

公开(公告)日：2000-11-07

申请号：US967732

申请日：1997-11-12

申请人： Takayuki Yagi ,  Junichi Kobayashi ,  Yasushi Kawasumi ,  Genzo Momma ,  Kenji Makino ,  Kei Fujita ,  Yasushi Matsuno ,  Yukihiro Hayakawa ,  Masahiro Takizawa

发明人： Takayuki Yagi ,  Junichi Kobayashi ,  Yasushi Kawasumi ,  Genzo Momma ,  Kenji Makino ,  Kei Fujita ,  Yasushi Matsuno ,  Yukihiro Hayakawa ,  Masahiro Takizawa

IPC分类号： B41J2/05 ,  B41J2/16 ,  B81B3/00 ,  B81C1/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/38 ,  G01Q70/16 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  B44C1/22

CPC分类号： B81C1/00087 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/13 ,  B81B2201/052

摘要： The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

摘要翻译： 本发明提供一种制造通孔的方法，用于制造通孔的基板，具有通孔的基板以及使用这种通孔的装置或具有这种通孔的基板，其中 其特征在于：只能通过从其背面蚀刻硅衬底来制造通孔; 无论硅晶片厚度和取向平面角度的变化如何，也可以将开口长度d精确地控制到期望值，并且不管所采用的取决于硅晶体取向的各向异性蚀刻剂的类型如何; 可以实现高生产率，高生产重现性和易生产性; 即使长时间在高温下进行温度处理，也可以在开口形状中实现高自由度; 并且可以产生高精度通孔，而不管形成在基板表面上的器件的形状如何。

公开(公告)号：US06329265B1

公开(公告)日：2001-12-11

申请号：US09305486

申请日：1999-05-06

申请人： Mamoru Miyawaki ,  Yasushi Kawasumi ,  Shunsuke Inoue ,  Yutaka Akino ,  Toru Koizumi ,  Tetsunobu Kohchi

发明人： Mamoru Miyawaki ,  Yasushi Kawasumi ,  Shunsuke Inoue ,  Yutaka Akino ,  Toru Koizumi ,  Tetsunobu Kohchi

IPC分类号： H01L2130

CPC分类号： H01L21/3226 ,  H01L21/2007 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/76286 ,  H01L23/544 ,  H01L27/092 ,  H01L27/1203 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

摘要翻译： 具有形成在具有绝缘表面的基板上的半导体层的半导体器件包括通过从其主表面处理半导体层形成的第一区域和通过从另一个主表面处理半导体层而形成的第二区域，第一区域 和构成半导体功能元件，隔离区域等的第二区域。

公开(公告)号：US5952694A

公开(公告)日：1999-09-14

申请号：US403580

申请日：1995-03-14

申请人： Mamoru Miyawaki ,  Yasushi Kawasumi ,  Shunsuke Inoue ,  Yutaka Akino ,  Toru Koizumi ,  Tetsunobu Kohchi

发明人： Mamoru Miyawaki ,  Yasushi Kawasumi ,  Shunsuke Inoue ,  Yutaka Akino ,  Toru Koizumi ,  Tetsunobu Kohchi

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/762 ,  H01L23/544 ,  H01L27/092 ,  H01L27/12 ,  H01L27/01 ,  H01L27/082 ,  H01L31/0392

CPC分类号： H01L21/3226 ,  H01L21/2007 ,  H01L21/76264 ,  H01L23/544 ,  H01L27/1203 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/76286 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L27/092 ,  H01L2924/0002

摘要： A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

摘要翻译： 具有形成在具有绝缘表面的基板上的半导体层的半导体器件包括通过从其主表面处理半导体层形成的第一区域和通过从另一个主表面处理半导体层而形成的第二区域，第一区域 和构成半导体功能元件，隔离区域等的第二区域。