摘要:
According to one embodiment, a nonvolatile memory device includes an electrode and a memory layer. The memory layer is connected to the electrode, and the memory layer has a resistance configured to change due to a current flowing from the electrode. The electrode includes a first layer and a second layer. The first layer includes a metallic element and a first non-metallic element, and the first non-metallic element has a first valence n. The second layer is provided between the first layer and the memory layer, and the second layer includes the metallic element and a second non-metallic element. The second non-metallic element has a second valence (n+1) greater than the first valence n by 1.
摘要:
According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.
摘要:
According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.
摘要:
This disclosure provides an information recording device for use in a non-volatile information recording/reproduction system having a high recording density, the device including a resistive material having less phase separation or the like during switching. This disclosure also provides an information recording/reproduction system including the device. This disclosure provides an information recording device including: a pair of electrodes; and a recording layer between the electrodes, the recording layer recording information by its resistance change, the recording layer including at least one of (a) M3Oz and (b) AxM3—x0z as a main component, in (a) and (b), z being a value representing oxygen deficiency from z=4.5, and in (b), x satisfying 0.00
摘要:
According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.
摘要:
A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.
摘要:
A battery pack includes a secondary battery, a secondary battery protecting integrated circuit configured to protect the secondary battery, at least one sensor configured to output a fault signal indicating sensing of a fault in the battery pack or an electronic apparatus including the battery pack, a detecting circuit configured to output a fault detection signal indicating a detection of the fault signal, a delay circuit configured to output a pulse delaying from the fault detection signal, and a counter configured to count a number of generating the pulse, the counter having at least N bits (N is an integer greater than 1), wherein the counter stops an operation until a count of 2(N-1).
摘要:
Disclosed is an information processing apparatus including: a control section to obtain output condition information to show an output condition when a color chart is output, to obtain colorimetric data obtained by measuring the color chart, to create a color conversion profile based on the obtained colorimetric data, and to embed the output condition information in the created color conversion profile according to an order determined in advance.
摘要:
Disclosed are a device, a method, and a storage medium to create a color conversion table. According to one implementation, a color conversion table creating device includes, a color material amount limiting processing section; a first color conversion processing section; a second color conversion processing section; a combining section; a color material amount limiting inverse conversion processing section; and an output value determining section. The color material amount limiting processing section performs color material amount limiting of an input value in the color conversion table. The color material limiting inverse conversion processing section performs inverse conversion of the color material amount limiting after color conversion and combining the CMYK components. The output value determining section sets the inverted CMYK color components as an output value in the color conversion table.
摘要:
According to one embodiment, an information recording and reproducing device includes a stacked body. The stacked body includes a first layer, a second layer and a recording layer provided between the first layer and the second layer. The recording layer includes a phase-change material and a crystal nucleus. The phase-change material is capable of reversely changing between a crystal state and an amorphous state by a current supplied via the first layer and the second layer. The crystal nucleus is provided in contact with the phase-change material and includes a crystal nucleus material having a crystal structure identical to a crystal structure of the crystal state of the phase-change material, and a crystal nucleus coating provided on a surface of the crystal nucleus material and having a composition different from a composition of the crystal nucleus material.