-
公开(公告)号：US20100238702A1
公开(公告)日：2010-09-23
申请号：US12559931
申请日：2009-09-15
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/33 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1021
摘要： A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.
摘要翻译： 存储器阵列包括存储器单元，存储单元设置在第一线路和第二线路之间，并且由可变电阻器和串联连接的整流器构成。 可变电阻器是氧化硅（SiO 2）和过渡金属氧化物的混合物，过渡金属氧化物的比例设定为55〜80％。
-
公开(公告)号：US20110073927A1
公开(公告)日：2011-03-31
申请号：US12886079
申请日：2010-09-20
IPC分类号： H01L29/772 , H01L21/28
CPC分类号： G11B9/1472 , B82Y10/00 , G11B5/746 , G11B9/04 , G11B9/149 , G11C13/0007 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/101 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.
摘要翻译： 根据一个实施例，非易失性存储器件包括堆叠结构，其包括存储器部分和具有面向存储器部分的表面的电极; 以及电压施加部分，用于向存储器部分施加电压以改变电阻。 表面包括第一和第二区域。 第一区域包含第一非金属元素和金属元素Si，Ga和As的至少一种元素。 第二区域包含第二非金属元素和至少一个元素。 第二区域的第二非金属元素的含量比率高于第一区域。 第二非金属元素与至少一种元素之间的电负性的差异大于第一非金属元素与至少一种元素之间的电负性。 第一和第二区域中的至少一个具有各向异性形状。
-
公开(公告)号：US20110057246A1
公开(公告)日：2011-03-10
申请号：US12886202
申请日：2010-09-20
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/101 , B82Y10/00 , G11B5/743 , G11B9/04 , G11B9/1472 , G11B9/149 , G11C11/22 , G11C13/0007 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.
摘要翻译： 根据一个实施例，非易失性存储器件包括堆叠结构和电压施加部分。 堆叠结构包括存储部分和与存储器部分堆叠并具有面向存储部分的部分的表面的电极。 电压施加部分向存储器部分施加电压以引起存储器部分中的电阻的变化以存储信息。 表面包括第一区域和第二区域。 第一区域包含金属元素Si，Ga和As中的至少一种。 第一个区域是导电的。 第二区域包含金属元素Si，Ga和As中的至少一种，并且具有高于第一区域中的非金属元素的含量比的非金属元素的含量比。 第一区域和第二区域中的至少一个在表面上具有各向异性的形状。
-
公开(公告)号：US20110233508A1
公开(公告)日：2011-09-29
申请号：US13045608
申请日：2011-03-11
申请人： Takeshi ARAKI , Takeshi Yamaguchi
发明人： Takeshi ARAKI , Takeshi Yamaguchi
CPC分类号： H01L27/101 , B82Y10/00 , G11B9/04 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/71 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/147
摘要： According to one embodiment, a nonvolatile memory device includes an electrode and a memory layer. The memory layer is connected to the electrode, and the memory layer has a resistance configured to change due to a current flowing from the electrode. The electrode includes a first layer and a second layer. The first layer includes a metallic element and a first non-metallic element, and the first non-metallic element has a first valence n. The second layer is provided between the first layer and the memory layer, and the second layer includes the metallic element and a second non-metallic element. The second non-metallic element has a second valence (n+1) greater than the first valence n by 1.
摘要翻译： 根据一个实施例，非易失性存储器件包括电极和存储层。 存储层连接到电极，并且存储层具有被配置为由于从电极流过的电流而改变的电阻。 电极包括第一层和第二层。 第一层包括金属元素和第一非金属元素，第一非金属元素具有第一价态n。 第二层设置在第一层和存储层之间，第二层包括金属元件和第二非金属元件。 第二非金属元素具有比第一价数n大1的第二价（n + 1）。
-
公开(公告)号：US20100204049A1
公开(公告)日：2010-08-12
申请号：US12764638
申请日：2010-04-21
申请人： Takeshi ARAKI , Koichi Nakao , Izumi Hirabayashi
发明人： Takeshi ARAKI , Koichi Nakao , Izumi Hirabayashi
CPC分类号： C23C18/1216 , C23C18/1254 , C23C18/1279 , C23C18/1283 , H01L39/2425 , Y10T428/265
摘要： The present invention relates to a method of preparing an oxide superconducting film, the method includes reacting a metal acetate containing metal M selected from the group consisting of lanthanum, neodymium and samarium with fluorocarboxylic acid having not less than three carbon atoms, reacting barium acetate with fluorocarboxylic acid having two carbon atoms, reacting copper acetate with fluorocarboxylic acid having not less than two carbon atoms, respectively, followed by refining reaction products, dissolving the reaction products in methanol such that a molar ratio of the metal M, barium and copper is 1:2:3 to prepare a coating solution, and coating a substrate with the coating solution to form a gel film, followed by calcining and firing the gel film to prepare an oxide superconducting film.
摘要翻译： 本发明涉及一种制备氧化物超导膜的方法，该方法包括使选自镧，钕和钐的金属乙酸盐与含有不少于3个碳原子的氟代羧酸反应，使乙酸钡与 具有两个碳原子的氟代羧酸，分别使乙酸铜与不少于2个碳原子的氟代羧酸反应，然后精制反应产物，将反应产物溶解在甲醇中，使金属M，钡和铜的摩尔比为1 ：2:3以制备涂布溶液，并用涂布溶液涂布基材以形成凝胶膜，然后煅烧和烧结凝胶膜以制备氧化物超导膜。
-
公开(公告)号：US20080274895A1
公开(公告)日：2008-11-06
申请号：US12041094
申请日：2008-03-03
申请人： Takeshi ARAKI , Koichi Nakao , Izumi Hirabayashi
发明人： Takeshi ARAKI , Koichi Nakao , Izumi Hirabayashi
CPC分类号： C23C18/1216 , C23C18/1254 , C23C18/1279 , C23C18/1283 , H01L39/2425 , Y10T428/265
摘要： The present invention relates to a method of preparing an oxide superconducting film, the method includes reacting a metal acetate containing metal M selected from the group consisting of lanthanum, neodymium and samarium with fluorocarboxylic acid having not less than three carbon atoms, reacting barium acetate with fluorocarboxylic acid having two carbon atoms, reacting copper acetate with fluorocarboxylic acid having not less than two carbon atoms, respectively, followed by refining reaction products, dissolving the reaction products in methanol such that a molar ratio of the metal M, barium and copper is 1:2:3 to prepare a coating solution, and coating a substrate with the coating solution to form a gel film, followed by calcining and firing the gel film to prepare an oxide superconducting film.
摘要翻译： 本发明涉及一种制备氧化物超导膜的方法，该方法包括使选自镧，钕和钐的金属乙酸盐与含有不少于3个碳原子的氟代羧酸反应，使乙酸钡与 具有两个碳原子的氟代羧酸，分别使乙酸铜与不少于2个碳原子的氟代羧酸反应，然后精制反应产物，将反应产物溶解在甲醇中，使金属M，钡和铜的摩尔比为1 ：2:3以制备涂布溶液，并用涂布溶液涂布基材以形成凝胶膜，然后煅烧和烧结凝胶膜以制备氧化物超导膜。
-
公开(公告)号：US20080139393A1
公开(公告)日：2008-06-12
申请号：US11857089
申请日：2007-09-18
申请人： Takeshi ARAKI
发明人： Takeshi ARAKI
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1254 , C23C18/1295 , Y10T29/49014 , Y10T428/24975 , Y10T428/26
摘要： An oxide superconductor film formed on a substrate includes an oxide containing at least one metal M selected from the group consisting of yttrium and lanthanoid metals, provided that cerium, praseodymium, promethium and ruthenium are excluded, and barium and copper, in which the film has an average thickness of 350 nm or more, an average amount of residual carbon of 3×1019 atoms/cc or more, and an amount of residual fluorine in a range of 5×1017 to 1×1019 atoms/cc, and in which, when divided the film into a plurality of regions from a surface of the film or from an interface between the film and the substrate, each region having a thickness of 10 nm, atomic ratios of copper, fluorine, oxygen and carbon between two adjacent regions are in a range of 1/5 times to 5 times.
摘要翻译： 形成在基板上的氧化物超导体膜包括含有选自钇和镧系金属中的至少一种选自金属M的氧化物的氧化物，条件是除去铈，镨，ium和钌，以及其中所述膜具有的钡和铜 平均厚度为350nm以上，平均残留碳量为3×10 19原子/ cc以上，残留氟量为5×10 17〜 至1×10 19原子/ cc，并且其中当将膜从膜的表面或从膜和衬底之间的界面分成多个区域时，每个区域的厚度为 两个相邻区域之间的铜，氟，氧和碳的原子比为10nm，为1/5倍至5倍。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.026 秒)